Rapid spectrophotometric detection for optimized production of landomycins and characterization of their therapeutic potential von Chappell, Todd C., Maiello, Kathleen G., Tierney, Allison J., Yanagi, Karin, Lee, Jessica A., Lee, Kyongbum, Mace, Charles R., Bennett, Clay S., Nair, Nikhil U.

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Simulated disparity and peripheral blur interact during binocular fusion von Maiello, Guido, Chessa, Manuela, Solari, Fabio, Bex, Peter J

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Stable electroluminescence from reverse biased n -type porous silicon–aluminum Schottky junction device von Lazarouk, S., Jaguiro, P., Katsouba, S., Masini, G., La Monica, S., Maiello, G., Ferrari, A.

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Naturalistic depth perception and binocular vision von Maiello, G

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Dichoptic saccadic adaptation von Maiello, G., Harrison, W. J., Bex, P. J.

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Stable electroluminescence from reverse biased n -type porous silicon–aluminum Schottky junction device von Lazarouk, S., Jaguiro, P., Katsouba, S., Masini, G., La Monica, S., Maiello, G., Ferrari, A.

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Visual determination of thickness and porosity of porous silicon layers von Lazarouk, S, Jaguiro, P, Katsouba, S, Maiello, G, La Monica, S, Masini, G, Proverbio, E, Ferrari, A

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Anisotropy of Porous Anodization of Aluminum for VLSI Technology von Lazarouk, S., Baranov, I., Maiello, G., Proverbio, E., De Cesare, G., Ferrari, A.

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Progress in the field of integrated optoelectronics based on porous silicon von La Monica, S, Maiello, G, Ferrari, A, Masini, G, Lazarouk, S, Jaguiro, P, Katsouba, S

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Visible light from aluminum-porous silicon Schottky junctions von Lazarouk, S, Jaguiro, P, Katsouba, S, La Monica, S, Maiello, G, Masini, G, Ferrari, A

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Amorphous silicon sensors for oxidised porous silicon optical waveguides buried in silicon wafers von de Cesare, G, Maiello, G, Masini, G, Bondarenko, V, Ferrari, A

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Electroluminescence from aluminum-porous silicon reverse-biased Schottky diodes formed on the base of highly doped n-type polysilicon von Lazarouk, S, Bondarenko, V, La Monica, S, Maiello, G, Masini, G, Pershukevich, P, Ferrari, A

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Porous silicon obtained by anodization in the transition regime von Bertolotti, M., Carassiti, F., Fazio, E., Ferrari, A., La Monica, S., Lazarouk, S., Liakhou, G., Maiello, G., Proverbio, E., Schirone, L.

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Crystallization of silicon carbide thin films by pulsed laser irradiation von De Cesare, G., La Monica, S., Maiello, G., Masini, G., Proverbio, E., Ferrari, A., Chitica, N., Dinescu, M., Alexandrescu, R., Morjan, I., Rotiu, E.

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Porous silicon as low-dimensional host material for erbium-doped structures von Bondarenko, V., Dolgyi, L., Dorofeev, A., Kazuchits, N., Leshok, A., Troyanova, G., Vorozov, N., Maiello, G., Masini, G., La Monica, S., Ferrari, A.

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Crystallization of amorphous silicon carbide thin films by laser treatment von De Cesare, G., La Monica, S., Maiello, G., Proverbio, E., Ferrari, A., Dinescu, M., Chitica, N., Morjan, I., Andrei, A.

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Capacity coupled r.f. discharge plasma jet treatment of a-SiC:H structures von Ferrari, A., Maiello, G., La Monica, S., Proverbio, E., Dinescu, G., Dinescu, M., Chitica, N., Andrei, A., Sandu, V., Gartner, M., Masini, G.

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Electrical characterization of visible emitting electroluminescent Schottky diodes based on n-type porous silicon and on highly doped n-type porous polysilicon von Lazarouk, S., Bondarenko, V., Jaguiro, P., Lacquaniti, N., La Monica, S., Maiello, G., Masini, G., Ferrari, A.

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Conductivity effects in hydrogenated amorphous silicon induced by gamma-ray irradiation von Baccaro, S., De Cesare, G., Maiello, G., Masini, G., Montecchi, M., Petti, M., Ferrari, A.

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Laser and nitrogen plasma beam induced modifications in amorphous silicon thin films von Ferrari, A, Maiello, G, La Monica, S, De Cesare, G, Dinescu, G, Dinescu, M, Aldea, E, Chitica, N, Morjan, I, Gartner, M, Masini, G

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