Achieving direct band gap in germanium through integration of Sn alloying and external strain von Gupta, Suyog, Magyari-Köpe, Blanka, Nishi, Yoshio, Saraswat, Krishna C.

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Ferroelectric Switching Pathways and Energetics in (Hf,Zr)O2 von Barabash, Sergey V., Pramanik, Dipankar, Zhai, Yahong, Magyari-Kope, Blanka, Nishi, Yoshio

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Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in \hbox for Resistive Switching Memory von Seong-Geon Park, Magyari-Köpe, Blanka, Nishi, Y

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Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations von Zhao, Liang, Clima, Sergiu, Magyari-Köpe, Blanka, Jurczak, Malgorzata, Nishi, Yoshio

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Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching von Kamiya, Katsumasa, Moon Young Yang, Magyari-Kope, Blanka, Niwa, Masaaki, Nishi, Yoshio, Shiraishi, Kenji

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Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform von Lin, Cheng‐Ming, Hsu, Chuang‐Han, Huang, Wei‐Yu, Astié, Vincent, Cheng, Po‐Hsien, Lin, Yue‐Min, Hu, Wei‐Shan, Chen, Szu‐Hua, Lin, Han‐Yu, Li, Ming‐Yang, Magyari‐Kope, Blanka, Yang, Chi‐Ming, Decams, Jean‐Manuel, Lee, Tzu‐Lih, Gui, Dong, Wang, Han, Woon, Wei‐Yen, Lin, Pinyen, Wu, Jeff, Lee, Jang‐Jung, Liao, Szuya Sandy, Cao, Min

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Suppressing the filament formation by aluminum doping in anatase titanium oxide von Chung, Chih-Hung, Lin, Chiung-Yuan, Yang, Tsung-Fu, Huang, Hsin-Hui, Hou, Tuo-Hung, Magyari-Köpe, Blanka

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Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories von Kamiya, Katsumasa, Yang, Moon Young, Nagata, Takahiro, Park, Seong-Geon, Magyari-Köpe, Blanka, Chikyow, Toyohiro, Yamada, Keisaku, Niwa, Masaaki, Nishi, Yoshio, Shiraishi, Kenji

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Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold von Tsai, Yi-Chia, Magyari-Kope, Blanka, Li, Yiming, Samukawa, Seiji, Nishi, Yoshio, Sze, Simon M.

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AC stress and electronic effects on SET switching of HfO2 RRAM von Liu, Jen-Chieh, Magyari-Köpe, Blanka, Qin, Shengjun, Zheng, Xin, Philip Wong, H.-S., Hou, Tuo-Hung

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Electronic structure and stability of low symmetry Ta2O5polymorphs von Kim, Ja-Yong, Magyari-Köpe, Blanka, Lee, Kee-Jeung, Kim, Hyeong-Soo, Lee, Seok-Hee, Nishi, Yoshio

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Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM von Duncan, Dan, Magyari-Kope, Blanka, Nishi, Yoshio

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Model of metallic filament formation and rupture in NiO for unipolar switching von Lee, Hyung Dong, Magyari-Köpe, Blanka, Nishi, Yoshio

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Recommended Methods to Study Resistive Switching Devices von Lanza, Mario, Wong, H.‐S. Philip, Pop, Eric, Ielmini, Daniele, Strukov, Dimitri, Regan, Brian C., Larcher, Luca, Villena, Marco A., Yang, J. Joshua, Goux, Ludovic, Belmonte, Attilio, Yang, Yuchao, Puglisi, Francesco M., Kang, Jinfeng, Magyari‐Köpe, Blanka, Yalon, Eilam, Kenyon, Anthony, Buckwell, Mark, Mehonic, Adnan, Shluger, Alexander, Li, Haitong, Hou, Tuo‐Hung, Hudec, Boris, Akinwande, Deji, Ge, Ruijing, Ambrogio, Stefano, Roldan, Juan B., Miranda, Enrique, Suñe, Jordi, Pey, Kin Leong, Wu, Xing, Raghavan, Nagarajan, Wu, Ernest, Lu, Wei D., Navarro, Gabriele, Zhang, Weidong, Wu, Huaqiang, Li, Runwei, Holleitner, Alexander, Wurstbauer, Ursula, Lemme, Max C., Liu, Ming, Long, Shibing, Liu, Qi, Lv, Hangbing, Padovani, Andrea, Pavan, Paolo, Valov, Ilia, Jing, Xu, Han, Tingting, Zhu, Kaichen, Chen, Shaochuan, Hui, Fei, Shi, Yuanyuan

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Uniaxial Stress Engineering for High-Performance Ge NMOSFETs von Kobayashi, Masaharu, Irisawa, Toshifumi, Magyari-Kope, Blanka, Saraswat, Krishna, Wong, H.-S Philip, Nishi, Yoshio

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HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides von Mleczko, Michal J, Zhang, Chaofan, Lee, Hye Ryoung, Kuo, Hsueh-Hui, Magyari-Köpe, Blanka, Moore, Robert G, Shen, Zhi-Xun, Fisher, Ian R, Nishi, Yoshio, Pop, Eric

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First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides von Magyari-Köpe, Blanka, Park, Seong Geon, Lee, Hyung-Dong, Nishi, Yoshio

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Hydrogen-Induced Oxygen Vacancy Bistability and Its Impact on RRAM Device Operation von Keumdong Jung, Magyari-Kope, Blanka, Nishi, Yoshio

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Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory von Zhao, Liang, Park, Seong-Geon, Magyari-Köpe, Blanka, Nishi, Yoshio

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ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels von Kamiya, Katsumasa, Young Yang, Moon, Park, Seong-Geon, Magyari-Köpe, Blanka, Nishi, Yoshio, Niwa, Masaaki, Shiraishi, Kenji

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