Alkali element background reduction in laser ICP-MS von Magee, C W, Norris, C A

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Fluorine partitioning between eclogitic garnet, clinopyroxene, and melt at upper mantle conditions von Beyer, C., Klemme, S., Grützner, T., Ireland, T.R., Magee, C.W., Frost, D.J.

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Ion beams in silicon processing and characterization von Chason, E., Picraux, S. T., Poate, J. M., Borland, J. O., Current, M. I., Diaz de la Rubia, T., Eaglesham, D. J., Holland, O. W., Law, M. E., Magee, C. W., Mayer, J. W., Melngailis, J., Tasch, A. F.

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SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy von Magee, C.W., Hockett, R.S., Büyüklimanli, T.H., Abdelrehim, I., Marino, J.W.

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Si dopant migration and the AlGaAs/GaAs inverted interface von PFEIFFER, L, SCHUBERT, E. F, WEST, K. W, MAGEE, C. W

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Hydrogen localization near boron in silicon von PANKOVE, J. I, ZANZUCCHI, P. J, MAGEE, C. W, LUCOVSKY, G

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A Cold Shock-Induced Cyanobacterial RNA Helicase von Chamot, D, Magee, W C, Yu, E, Owttrim, G W

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Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Si von Buyuklimanli, T. H., Magee, C. W., Marino, J. W., Walther, S. R.

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Effect of chemical abrasion of zircon on SIMS U–Pb, δ18O, trace element, and LA-ICPMS trace element and Lu–Hf isotopic analyses von Kooymans, Cate, Magee, Charles W, Waltenberg, Kathryn, Evans, Noreen J, Bodorkos, Simon, Amelin, Yuri, Kamo, Sandra L, Ireland, Trevor

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Examination of the accuracy of SHRIMP U–Pb geochronology based on samples dated by both SHRIMP and CA-TIMS von Magee Jr, Charles W., Bodorkos, Simon, Lewis, Christopher J., Crowley, James L., Wall, Corey J., Friedman, Richard M.

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A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon von Carlson, D. E., Magee, C. W.

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Hydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitors von GALE, R, FEIGL, F. J, MAGEE, C. W, YOUNG, D. R

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Extreme isotopologue disequilibrium in molecular SIMS species during SHRIMP geochronology von Magee Jr., Charles W, DaniÅ¡ík, Martin, Mernagh, Terry

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Depth profiling by SIMS-depth resolution, dynamic range and sensitivity von Magee, C. W., Honig, R. E.

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SIMS Analyses Of Ultra-Low Energy B Ion Implants In Si: Evaluation Of Profile Shape And Dose Accuracy von Magee, C W, Hockett, R S, Buyuklimanli, T H, Abdelrehim, I, Marino, J W

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Hole-mediated chemisorption of atomic hydrogen in silicon von PANKOVE, J. I, MAGEE, C. W, WANCE, R. O

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The interdiffusion of Si, P, and In at polysilicon/GaAs interfaces von KAVANAGH, K. L, MAGEE, C. W, SHEETS, J, MAYER, J. W

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Silicon diffusion at polycrystalline-Si/GaAs interfaces von KAVANAGH, K. L, MAYER, J. W, MAGEE, C. W, SHEETS, J, TONG, J, WOODALL, J. M

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Mechanisms for Si dopant migration in molecular beam epitaxy AlxGa1−xAs von Mills, A. P., Pfeiffer, L. N., West, K. W., Magee, C. W.

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Mechanism of Inhibition of Vaccinia Virus DNA Polymerase by Cidofovir Diphosphate von MAGEE, Wendy C, HOSTELLER, Karl Y, EVANS, David H

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