N 1s Soft X-ray Absorption Spectra of Transition-Metal Pernitrides TN2 von Soda, K., Maeguchi, K., Kawada, T., Ibaragi, T., Kato, M., Niwa, K., Hasegawa, M., Takakura, S., Nakatake, M.

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Infrared Spectroscopy of Transition-Metal Pernitrides TN2 under High Pressure von Soda, K., Komabuchi, M., Maeguchi, K., Kato, M., Terabe, T., Niwa, K., Hasegawa, M., Ikemmoto, Y., Okamura, H.

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Analysis of hot-carrier-induced degradation mode on pMOSFET's von Matsuoka, F., Iwai, H., Hayashida, H., Hama, K., Toyoshima, Y., Maeguchi, K.

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Drain structure optimization for highly reliable deep submicrometer n-channel MOSFET von Matsuoka, F., Kasai, K., Oyamatsu, H., Kinugawa, M., Maeguchi, K.

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Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET's von Toyoshima, Y., Iwai, H., Matsuoka, F., Hayashida, H., Maeguchi, K., Kanzaki, K.

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Impurity diffusion behavior of bipolar transistor under low-temperature furnace annealing and high-temperature RTA and its optimization for 0.5- mu m Bi-CMOS process von Norishima, M., Iwai, H., Niitsu, Y., Maeguchi, K.

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Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation von Naruke, K., Yoshida, M., Maeguchi, K., Tango, H.

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Electromigration reliability for a tungsten-filled via hole structure von Matsuoka, F., Iwai, H., Hama, K., Itoh, H., Nakata, R., Nakakubo, T., Maeguchi, K., Kanzaki, K.

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Radiation effects on p+ poly gate MOS structures with thin oxides von Yoshii, I, MAEGUCHI, K, Hama, K

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遷移金属多窒化物TN2のN 1s軟X線吸収スペクトル von 曽田, 一雄, 前口, 景祐, 川田, 拓也, 茨木, 俊貴, 加藤, 政彦, 丹羽, 健, 長谷川, 正, 高倉, 将一, 仲武, 昌史

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A 4-Mb CMOS SRAM with a PMOS thin-film-transistor load cell von Ootani, T., Hayakawa, S., Kakumu, M., Aona, A., Kinugawa, M., Takeuchi, H., Noguchi, K., Yabe, T., Sato, K., Maeguchi, K., Ochii, K.

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Total-dose characterization of a high-performance radiation-hardened 1.0- mu m CMOS sea-of-gates technology von Yoshii, I., Hama, K., Maeguchi, K., Takatsuka, S., Hatano, H.

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遷移金属多窒化物TN2の高圧下赤外分光 von 曽田, 一雄, 駒淵, 舞, 前口, 景祐, 加藤, 政彦, 寺部, 俊紀, 丹羽, 健, 長谷川, 正, 池本, 夕佳, 岡本, 英一

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A 0.8- mu m BiCMOS ATM switch on an 800 Mb/s asynchronous buffered banyan network von Sakaue, K., Shobatake, Y., Motoyama, M., Kumaki, Y., Takatsuka, S., Tanaka, S., Hara, H., Matsuda, K., Kitaoka, S., Noda, M., Niitsu, Y., Norishima, M., Momose, H., Maeguchi, K., Ishibe, M., Shimizu, S., Kodama, T.

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Interface state generation under long-term positive-bias temperature stress for a p/sup +/ poly gate MOS structure von Hiruta, Y., Iwai, H., Matsuoka, F., Hama, K., Maeguchi, K., Kanzaki, K.

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Cell-specific properties of red cell and liver ferritin from bullfrog tadpoles probed by phosphorylation in vitro von Ihara, K, Maeguchi, K, Young, C T, Theil, E C

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A 32 kbyte integrated cache memory von Sawada, K., Sakurai, T., Nogami, K., Shirotori, T., Takayanagi, T., Iizuka, T., Maeda, T., Matsunaga, J., Fuji, H., Maeguchi, K., Kobayashi, K., Ando, T., Hayakashi, Y., Miyoshi, A., Sato, K.

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A 10-ns 54×54-b parallel structured full array multiplier with 0.5-μm CMOS technology von MORI, J, NAGAMATSU, M, HIRANO, M, TANAKA, S, NODA, M, TOYOSHIMA, Y, HASHIMOTO, K, HAYASHIDA, H, MAEGUCHI, K

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A 64 Kbit MOS dynamic random access memory von Natori, K., Ogura, M., Maeguchi, K., Taguchi, S., Iwai, H.

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A subnanosecond 8K-gate CMOS/SOS gate array von Tanaka, S., Iwamura, J., Ohno, J., Maeguchi, K., Tango, H., Doi, K.

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