AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources von El Fatimy, A., Dyakonova, N., Meziani, Y., Otsuji, T., Knap, W., Vandenbrouk, S., Madjour, K., Théron, D., Gaquiere, C., Poisson, M. A., Delage, S., Prystawko, P., Skierbiszewski, C.

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Terahertz imaging using high electron mobility transistors as plasma wave detectors von Nadar, S., Coquillat, D., Sakowicz, M., Videlier, H., Teppe, F., Dyakonova, N., Knap, W., Peiris, J.-M., Lyonnet, J., Seliuta, D., Kasalynas, I., Valušis, G., Madjour, K., Théron, D., Gaquière, C., Poisson, M.-A.

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Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs von Fatimy, A El, Suemitsu, T, Otsuji, T, Dyakonova, N, Knap, W, Meziani, Y M, Vandenbrouk, S, Madjour, K, Théron, D, Gaquiere, Ch, Prystawko, P, Skierbiszewski, C

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12 GHz F-max GaN/AlN/AlGaN nanowire MISFET von Vandenbrouck, S., Madjour, K., Theron, D., Dong, Y.J., Li, Y., Lieber, C.M., Gaquière, Christophe

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Field Effect Transistors for Terahertz Detection and Emission von Knap, Wojciech, Nadar, Salman, Videlier, Hadley, Boubanga-Tombet, Stephane, Coquillat, Dominique, Dyakonova, Nina, Teppe, Frederic, Karpierz, Kristoph, Łusakowski, Jerzy, Sakowicz, Maciej, Kasalynas, Irmantas, Seliuta, Dalius, Valusis, Gintaras, Otsuji, Taiichi, Meziani, Yahya, El Fatimy, Abdel, Vandenbrouk, Simon, Madjour, Kamel, Théron, Didier, Gaquière, Christophe

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12 GHz [Formula Omitted] GaN/AlN/AlGaN Nanowire MISFET von Vandenbrouck, S, Madjour, K, Theron, D, Dong, Yajie, Li, Yat, Lieber, C.M, Gaquiere, C

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12 GHz F GaN/AlN/AlGaN Nanowire MISFET von Vandenbrouck, S., Madjour, K., Theron, D., Yajie Dong, Yat Li, Lieber, C.M., Gaquiere, C.

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12 GHz [F_{rm MAX}] @@iGaN/AlN/AlGaN@ Nanowire MISFET von Vandenbrouck, S, Madjour, K, Theron, D, Dong, Yajie, Li, Yat, Lieber, C M, Gaquiere, C

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12 GHz F rm MAX GaN/AlN/AlGaN Nanowire MISFET von Vandenbrouck, S, Madjour, K, Theron, D, Yajie Dong, Yajie Dong, Yat Li, Yat Li, Lieber, C M, Gaquiere, C

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Sub-terahertz resistive mixing in an AlGaN/GaN FET von Madjour, K, Ducournau, G, Lepilliet, S, Akalin, T, Lampin, J F, Poisson, M A, Delage, S, Gaquière, C

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Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors von Dyakonova, N, Fatimy, A E, Meziani, Y, Otsuji, T, Coquillat, D, Knap, W, Teppe, F, Vandenbrouk, S, Madjour, K, Theron, D, Gaquiere, C, Poisson, M A, Delage, S

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Sub-terahertz imaging with AlGaN/GaN MISFETs von Nadar, S, Klimenko, O, Videlier, H, Coquillat, D, Dyakonova, N, Teppe, F, Knap, W, Madjour, K, Ducournau, G, Gaquière, C, Poisson, M A, Torres, J, Szczytko, J, Dobroiu, A, Otani, C

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Terahertz imaging using high electron mobility transistors as plasma wave detectors von Nadar, S., Coquillat, D., Sakowicz, M., Videlier, H., Teppe, F., Dyakonova, N., Knap, W., Peiris, J.M., Lyonnet, J., Seliuta, D., Kasalynas, I., Valusis, G., Madjour, K., Theron, D., Gaquière, Christophe, Poisson, M.A.

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