Materials science Silicon carbide in contention von Madar, Roland

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Silicon carbide in contention von Madar, Roland

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Open Issues in SiC Bulk Growth von Chaussende, Didier, Sarigiannidou, Eirini, Seiss, Martin, Ouisse, Thierry, Ariyawong, Kanaparin, La Manna, Joseph, Dedulle, Jean Marc, Madar, Roland, Tsavdaris, Nikolaos, Shin, Yun Ji, Chaix-Pluchery, Odette

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Control of the Supersaturation in the CF−PVT Process for the Growth of Silicon Carbide Crystals:  Research and Applications von Chaussende, Didier, Ucar, Magali, Auvray, Laurent, Baillet, Francis, Pons, Michel, Madar, Roland

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Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase von Madar, Roland, Chaussende, Didier, Pons, Michel, Eid, Jessica, Mercier, Frédéric

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MOCVD-Processed Ni Films from Nickelocene. Part II: Carbon Content of the Deposits von Brissonneau, Laurent, de Caro, Dominique, Boursier, Daniel, Madar, Roland, Vahlas, Constantin

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Continuous feed physical vapor transport: Toward high purity and long boule growth of SiC von CHAUSSENDE, D, BAILLET, F, CHARPENTIER, L, PERNOT, E, PONS, M, MADAR, R

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Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy von Madar, Roland, Chaussende, Didier, Pons, Michel, Mercier, Frédéric

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High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism von Madar, Roland, Boutarek, N., Chaussende, Didier

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Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method von Madar, Roland, Auvray, Laurent, Ucar, M., Chaussende, Didier, Pons, Michel, Latu-Romain, Laurence

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Top Seeded Solution Growth of 3C-SiC Single Crystals von Madar, Roland, Chaussende, Didier, Dedulle, Jean Marc, Pons, Michel, Mercier, Frédéric

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Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique von Galben-Sandulache, Irina G., Sun, Guoli L., Pons, Michel, Madar, Roland, Dedulle, Jean Marc, Chaussende, Didier, Ouisse, Thierry

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Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals von Galben-Sandulache, Irina G., Sun, Guoli L., Pons, Michel, Madar, Roland, Dedulle, Jean Marc, Chaussende, Didier, Ouisse, Thierry

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Gas Fed Top-Seeded Solution Growth of Silicon Carbide von Pons, Michel, Madar, Roland, Chaussende, Didier

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Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique von Camassel, Jean, Zoulis, Georgios, Galben-Sandulache, Irina G., Sun, Guoli L., Juillaguet, Sandrine, Madar, Roland, Sun, Jian Wu, Chaussende, Didier, Ouisse, Thierry

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Dislocation-Induced Birefringence in Silicon Carbide von Madar, Roland, Auvray, Laurent, Chaussende, Didier, Ouisse, Thierry, Pernot, Etienne

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Characterization of Bulk 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method von Camassel, Jean, Pons, Michel, Juillaguet, Sandrine, Rapenne, L., Madar, Roland, Balloud, Carole, Chaussende, Didier, Latu-Romain, Laurence, Pernot, Etienne

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Study of 3C-SiC nucleation on (0 0 0 1) 6H-SiC nominal surfaces by the CF-PVT method von Latu-Romain, L., Chaussende, D., Chaudouët, P., Robaut, F., Berthomé, G., Pons, M., Madar, R.

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Defects in sublimation-grown SiC bulk crystals von Madar, Roland, Pernot, Etienne, Anikin, Mikael, Pons, Michel

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Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling von Wellmann, Peter J., Nishizawa, Shin Ichi, Pons, Michel, Madar, Roland, Chaussende, Didier, Dedulle, Jean Marc, Blanquet, Elisabeth

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