Black phosphorus saturable absorber for ultrashort pulse generation von Sotor, J., Sobon, G., Macherzynski, W., Paletko, P., Abramski, K. M.

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Harmonically mode-locked Er-doped fiber laser based on a Sb2Te3 topological insulator saturable absorber von Sotor, J, Sobon, G, Macherzynski, W, Abramski, K M

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Technology of ZnO nanofibers based devices von Stafiniak, A., Boratyński, B., Baranowska-Korczyc, A., Macherzyński, W., Fronc, K., Paszkiewicz, R., Tłaczała, M., Elbaum, D.

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Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au metallization to n-type AlGaN/GaN heterostructures von Macherzyński, W., Paszkiewicz, B., Vincze, A., Paszkiewicz, R., Tłaczała, M., Kováč, J.

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Mode-locked Er-doped fiber laser based on liquid phase exfoliated Sb2Te3 topological insulator von Boguslawski, J, Sotor, J, Sobon, G, Tarka, J, Jagiello, J, Macherzynski, W, Lipinska, L, Abramski, K M

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Properties of MOVPE GaN grown on ZnO deposited on Si(0 0 1) and Si(1 1 1) substrates von Paszkiewicz, R., Paszkiewicz, B., Wosko, M., Szyszka, A., Marciniak, L., Prażmowska, J., Macherzyński, W., Serafińczuk, J., Kozłowski, J., Tlaczala, M., Kováč, J., Novotný, I., Škriniarová, J., Haško, D.

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Fabrication of ohmic contact based on platinum to p-type compositionally graded AlGaAs layers von Macherzyński, W, Wośko, M, Paszkiewicz, B, Ściana, B, Paszkiewicz, R, Tłaczała, M

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Harmonically mode-locked Er-doped fiber laser based on a Sb 2 Te 3 topological insulator saturable absorber von Sotor, J, Sobon, G, Macherzynski, W, Abramski, K M

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Mode-locked Er-doped fiber laser based on liquid phase exfoliated Sb 2 Te 3 topological insulator von Boguslawski, J, Sotor, J, Sobon, G, Tarka, J, Jagiello, J, Macherzynski, W, Lipinska, L, Abramski, K M

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Study of the activation process of Mg dopant in GaN:Mg layers von Paszkiewicz, B., Paszkiewicz, R., Szyszka, A., Wosko, M., Macherzynski, W., Tlaczala, M., Kudrawiec, R., Syperek, M., Misiewicz, J., Dumiszewska, E., Strupinski, W.

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Functionally graded semiconductor layers for devices application von Paszkiewicz, B., Paszkiewicz, R., Wosko, M., Radziewicz, D., Ściana, B., Szyszka, A., Macherzynski, W., Tłaczała, M.

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Ruthenium based Schottky contacts on n-type GaN von Macherzynski, W., Szyszka, A., Paszkiewicz, B., Paszkiewicz, R., Tlaczala, M.

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Characterisation of AlGaN MSM by Light Beam Induced Current technique von Paszkiewicz, Bogdan, Szyszka, Adam, Wosko, Mateusz, Macherzynski, Wojciech, Paszkiewicz, Regina, Tlaczala, Marek

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Development of diffusion barriers for Ti/Al based ohmic contact to AlGaN/GaN heterostructures von Macherzynski, W., Paszkiewicz, B.

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The influence of contact mode on resolution in UV 400 lithography von Indykiewicz, K., Macherzynski, W., Paszkiewicz, R.

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Fabrication of Si3N4 Layers by Pulse Magnetron Sputtering Method von Macherzynski, W., Prociow, E., Paszkicwicz, B., Prazmowska, J.

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Functionally Graded Structures of AIII-BV(N) Materials for Detectors von Wosko, M., Paszkiewicz, B., Piasecki, T., Prazmowska, J., Paszkiewicz, R., Szyszka, A., Macherzynski, W., Tlaczala, M.

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A Preliminary Evaluation of a Basic Fluorescence Image Processing in MentorEye System Using Artificially Prepared Phantoms von Majak, Marcin, Wojtków, Magdalena, Żmudzińska, Matylda, Macherzyński, Wojciech, Kulas, Zbigniew, Popek, Michał, Świątek-Najwer, Ewelina, Żuk, Magdalena

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Electrochemical and UV-Vis Spectroscopic Measurements of Nitric Oxide in Fibroblasts and Astrocytes von Macherzynski, Mariusz, Bilecki, Wiktor, Gorecki, Jerzy, Przewlocki, Ryszard, Golas, Janusz

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