High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN von Rolland, Gwen, Rodriguez, Christophe, Gommé, Guillaume, Boucherif, Abderrahim, Chakroun, Ahmed, Bouchilaoun, Meriem, Pepin, Marie Clara, El Hamidi, Faissal, Maher, Soundos, Arès, Richard, MacElwee, Tom, Maher, Hassan

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AlN grown by CBE for power device applications von Gommé, Guillaume, Cutivet, Adrien, Bouzazi, Boussairi, Boucherif, Abderrahim Rahim, MacElwee, Tom, Rodriguez, Christophe, Bouchilaoun, Meriem, Pelletier, Hubert, Provost, Philippe-Olivier, Maher, Hassan, Ares, Richard

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Characterization and Performance of D-Mode GaN HEMT Transistor Used in a Cascode Configuration von MacElwee, Tom, Roberts, John, Lafontaine, Hugues, Scott, I., Klowak, Greg, Yushyna, Lyubov

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Compact representation of temperature and power dependence of thermal resistance in Si, Inp and GaAs substrate devices using linear models von Walkey, David J., Smy, Tom J., Macelwee, Tom, Maliepaard, Michael

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Characterization and Performance of D-Mode GaN Hemt Transistor Used in a Cascode Configuration von MacElwee, Tom, Roberts, John, Lafontaine, Hugues, Klowak, Greg, Yushyna, Lyubov

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Optimizing the Natural MOSFETs in a 0.5μm Dual Poly Gate CMOS Process for 1V Mixed-Signal Applications von Bazarjani, Seyfi S., MacElwee, Tom, Snelgrove, Martin

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