High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3 von LIU, H. G, WU, J. Q, TAO, N, FIRTH, A. V, GRISWOLD, E. M, MACELWEE, T. W, BOLOGNESI, C. R

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Fabrication of high performance GaN modulation doped field effect transistors von Bardwell, J. A., Foulds, I., Lamontagne, B., Tang, H., Webb, J. B., Marshall, P., Rolfe, S. J., Stapledon, J., MacElwee, T. W.

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Compact, netlist-based representation of thermal transient coupling using controlled sources von Walkey, D.J., Smy, T.J., Celo, D., MacElwee, T.W., Maliepaard, M.C.

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Characterization of AlGaN/GaN HEMT Devices Grown by MBE von Tang, H., Webb, J.B., MacElwee, T.W., Bardwell, J.A.

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Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices von Walkey, D.J., Smy, T.J., MacElwee, T., Maliepaard, M.

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Short-channel effects on MOSFET subthreshold swing von Tarr, N.G., Walkey, D.J., Rowlandson, M.B., Hewitt, S.B., MacElwee, T.W.

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High-performance fully depleted silicon-on-insulator transistors von MacElwee, T.W., Calder, I.D., Bruce, R.A., Shepherd, F.R.

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Bias Stress Measurements on High Performance AlGaN/GaN HFET Devices von Liu, Y., Bardwell, J.A., McAlister, S.P., Tang, H., Webb, J.B., MacElwee, T.W.

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Growth and Characterisation of High Electron Mobility Transistors on 4H-SiC by Ammonia Molecular Beam Epitaxy von Webb, J., Tang, Haipeng, Bardwell, J.A., Rolfe, S., Liu, Ying, Lapointe, J., Marshall, P., MacElwee, T.W.

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Contact Resistance Reduction in AlGaN/GaN Heterostructure Field Effect Transistors von Amaya, R., Bardwell, J., Webb, J., Tang, H., MacElwee, T.W., Tarr, N.G.

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High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100mm InP substrates using PH3 and AsH3 von Liu, H.G, Wu, J.Q, Tao, N, Firth, A.V, Griswold, E.M, MacElwee, T.W, Bolognesi, C.R

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Investigation of high-current effects in staggered lineup InP/GaAsSb/InP heterostructure bipolar transistors: temperature characterization and comparison to conventional type-I HBT... von Bolognesi, C.R., Dvorak, M.W., Pitts, O., Watkins, S.P., MacElwee, T.W.

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A simple implanted backgate MOSFET for dynamic threshold control in fully-depleted SOI CMOS von Tarr, N.G., Soreefan, R., MacElwee, T.W., Snelgrove, W.M., Bazarjani, S.

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Formation of SiC for Microelectronic Applications by C Implantation into Doped a-Si von Manning, B. M., Hewitt, S. B., Tarr, N. G., MacElwee, T. W.

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A Chromosome 4P Haplotype Segregating with Parkinson's Disease and Postural Tremor von Farrer, Matt, Gwinn-Hardy, Katrina, Muenter, Manfred, DeVrieze, Fabienne Wavrant, Crook, Richard, Perez-Tur, Jordi, Lincoln, Sarah, Maraganore, Demetrius, Adler, Charles, Newman, Stephanie, MacElwee, Kari, McCarthy, Page, Miller, Carol, Waters, Cheryl, Hardy, John

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HIGH VALUE RESISTIVE LOAD FOR AN INTEGRATED CIRCUIT von MACELWEE, THOMAS W

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High Value Resistive Load for an Integrated Circuit von MACELWEE, THOMAS W

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High value resistive load for an integrated circuit von MACELWEE, THOMAS W

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SILICON-ON-INSULATOR SUBSTRATES ANNEALED IN POLYSILICON TUBE von CALDER, IAIN D, MACELWEE, THOMAS W

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Silicon-on-insulator substrates annealed in polysilicon tube von MACELWEE, THOMAS W, CALDER, IAIN D

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