High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3 von LIU, H. G, WU, J. Q, TAO, N, FIRTH, A. V, GRISWOLD, E. M, MACELWEE, T. W, BOLOGNESI, C. R

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Compact, netlist-based representation of thermal transient coupling using controlled sources von Walkey, D.J., Smy, T.J., Celo, D., MacElwee, T.W., Maliepaard, M.C.

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Defect reduction in GaN epilayers and HFET structures grown on (0 0 0 1)sapphire by ammonia MBE von Webb, James B., Tang, H., Bardwell, J.A., Moisa, S., Peters, C., MacElwee, T.

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Efficacy and safety of baricitinib for the treatment of hospitalised adults with COVID-19 (COV-BARRIER): a randomised, double-blind, parallel-group, placebo-controlled phase 3 tria... von Marconi, Vincent C, Ramanan, Athimalaipet V, de Bono, Stephanie, Kartman, Cynthia E, Krishnan, Venkatesh, Liao, Ran, Piruzeli, Maria Lucia B, Goldman, Jason D, Alatorre-Alexander, Jorge, de Cassia Pellegrini, Rita, Estrada, Vicente, Som, Mousumi, Cardoso, Anabela, Chakladar, Sujatro, Crowe, Brenda, Reis, Paulo, Zhang, Xin, Adams, David H, Ely, E Wesley, Ahn, Mi-Young, Akasbi, Miriam, Alatorre-Alexander, Jorge, Altclas, Javier David, Ariel, Federico, Ariza, Horacio Alberto, Atkar, Chandrasekhar, Bertetti, Anselmo, Bhattacharya, Meenakshi, Briones, Maria Luisa, Budhraja, Akshay, Burza, Aaliya, Camacho Ortiz, Adrian, Caricchio, Roberto, Casas, Marcelo, Cevoli Recio, Valeria, Choi, Won Suk, Cohen, Emilia, Comulada-Rivera, Angel, Cornejo Juarez, Dora Patricia, Daniel, Carnevali, Degrecci Relvas, Luiz Fernando, Dominguez Cherit, Jose Guillermo, Ellerin, Todd, Enikeev, Dmitry, Erico Tanni Minamoto, Suzana, Estrada, Vicente, Fiss, Elie, Furuichi, Motohiko, Giovanni Luz, Kleber, Goldman, Jason D., Gonzalez, Omar, Gordeev, Ivan, Gruenewald, Thomas, Hamamoto Sato, Victor Augusto, Heo, Eun Young, Heo, Jung Yeon, Hermida, Maria, Hirai, Yuji, Hutchinson, David, Iastrebner, Claudio, Ioachimescu, Octavian, Jain, Manish, Juliani Souza Lima, Maria Patelli, Khan, Akram, Kremer, Andreas E., MacElwee, Mark, Madhani-Lovely, Farah, Martínez Resendez, Michel Fernando, McKinnell, James, Milligan, Patrick, Minelli, Cesar, Moran Rodriguez, Miguel Angel, Parody, Maria Leonor, Paulin, Priscila, Pellegrini, Rita de Cassia, Pemu, Priscilla, Procopio Carvalho, Ana Carolina, Puoti, Massimo, Purow, Joshua, Ramesh, Mayur, Robinson, Philip, Rodrigues, Cristhieni, Rojas Velasco, Gustavo, Saraiva, Jose Francisco Kerr, Scheinberg, Morton, Schreiber, Stefan, Scublinsky, Dario, Sevciovic Grumach, Anete, Shawa, Imad, Simon Campos, Jesus, Sofat, Nidhi, Sprinz, Eduardo, Stienecker, Roger, Suarez, Jose, Tachikawa, Natsuo, Tahir, Hasan, Tiffany, Brian, Vishnevsky, Alexander, Westheimer Cavalcante, Adilson, Zirpe, Kapil

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Fabrication of high performance GaN modulation doped field effect transistors von Bardwell, J. A., Foulds, I., Lamontagne, B., Tang, H., Webb, J. B., Marshall, P., Rolfe, S. J., Stapledon, J., MacElwee, T. W.

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Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy von Tang, H., Webb, J. B., Bardwell, J. A., MacElwee, T.

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Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy von Tang, H., Webb, J.B., Bardwell, J.A., Rolfe, S., MacElwee, T.

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Characterization of AlGaN/GaN HEMT Devices Grown by MBE von Bardwell, J.A., Tang, H., Webb, J.B., MacElwee, T.W.

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Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices von Walkey, D.J., Smy, T.J., MacElwee, T., Maliepaard, M.

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Characterization and Performance of D-Mode GaN HEMT Transistor Used in a Cascode Configuration von MacElwee, Tom, Roberts, John, Lafontaine, Hugues, Scott, I., Klowak, Greg, Yushyna, Lyubov

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Growth and Characterisation of High Electron Mobility Transistors on 4H-SiC by Ammonia Molecular Beam Epitaxy von Webb, J., Tang, Haipeng, Bardwell, J.A., Rolfe, S., Liu, Ying, Lapointe, J., Marshall, P., MacElwee, T.W.

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Bias Stress Measurements on High Performance AlGaN/GaN HFET Devices von Liu, Y., Bardwell, J.A., McAlister, S.P., Tang, H., Webb, J.B., MacElwee, T.W.

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Contact Resistance Reduction in AlGaN/GaN Heterostructure Field Effect Transistors von Amaya, R., Bardwell, J., Webb, J., Tang, H., MacElwee, T.W., Tarr, N.G.

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Short-channel effects on MOSFET subthreshold swing von Tarr, N.G., Walkey, D.J., Rowlandson, M.B., Hewitt, S.B., MacElwee, T.W.

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Growth of GaN/AlGaN HFETs on SiC Substrates with Optimized Electrical Characteristics Using the Ammonia-MBE Technique von Webb, J.B., Tang, H., Bardwell, J.A., Liu, Y., Lapointe, J., MacElwee, T.

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High-performance fully depleted silicon-on-insulator transistors von MacElwee, T.W., Calder, I.D., Bruce, R.A., Shepherd, F.R.

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Compact representation of temperature and power dependence of thermal resistance in Si, Inp and GaAs substrate devices using linear models von Walkey, David J., Smy, Tom J., Macelwee, Tom, Maliepaard, Michael

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High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100mm InP substrates using PH3 and AsH3 von Liu, H.G, Wu, J.Q, Tao, N, Firth, A.V, Griswold, E.M, MacElwee, T.W, Bolognesi, C.R

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Investigation of high-current effects in staggered lineup InP/GaAsSb/InP heterostructure bipolar transistors: temperature characterization and comparison to conventional type-I HBT... von Bolognesi, C.R., Dvorak, M.W., Pitts, O., Watkins, S.P., MacElwee, T.W.

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A 1 V Switched-Capacitor /spl Sigma//spl Delta/ modulator von Bazarjani, S.S., Snelgrove, M., MacElwee, T.

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