Identification of two-dimensional layered dielectrics from first principles von Osanloo, Mehrdad Rostami, Van de Put, Maarten L., Saadat, Ali, Vandenberghe, William G.

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Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors von Rostami Osanloo, Mehrdad, Saadat, Ali, Van de Put, Maarten L, Laturia, Akash, Vandenberghe, William G

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Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk von Laturia, Akash, Van de Put, Maarten L., Vandenberghe, William G.

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Algorithmic Optimization of Transistors Applied to Silicon LDMOS von Chuang, Ping-Ju, Saadat, Ali, Vande Put, Maarten L., Edwards, Hal, Vandenberghe, William G.

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The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials von Brahma, Madhuchhanda, Van de Put, Maarten L., Chen, Edward, Fischetti, Massimo V., Vandenberghe, William G.

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Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers von Tiwari, Sabyasachi, Van de Put, Maarten L., Sorée, Bart, Vandenberghe, William G.

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Monte Carlo Study of Electronic Transport in Monolayer InSe von Gopalan, Sanjay, Gaddemane, Gautam, Put, Maarten L Van de, Fischetti, And Massimo V

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Ab-Initio Study of Magnetically Intercalated Platinum Diselenide: The Impact of Platinum Vacancies von Reyntjens, Peter D., Tiwari, Sabyasachi, van de Put, Maarten L., Soree, Bart, Vandenberghe, William G.

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Electronic Transport Properties of Silicane Determined from First Principles von Khatami, Mohammad Mahdi, Gaddemane, Gautam, Van de Put, Maarten L, Fischetti, Massimo V, Moravvej-Farshi, Mohammad Kazem, Pourfath, Mahdi, Vandenberghe, William G

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Monte Carlo analysis of phosphorene nanotransistors von Gaddemane, Gautam, Van de Put, Maarten L., Vandenberghe, William G., Chen, Edward, Fischetti, Massimo V.

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Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects von Tiwari, Sabyasachi, Van de Put, Maarten L, Sorée, Bart, Vandenberghe, William G

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LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification von Saadat, Ali, Van de Put, Maarten L., Edwards, Hal, Vandenberghe, William G.

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Channel Length Optimization for Planar LDMOS Field-Effect Transistors for Low-Voltage Power Applications von Saadat, Ali, Van De Put, Maarten L., Edwards, Hal, Vandenberghe, William G.

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Simulation Study on the Optimization and Scaling Behavior of LDMOS Transistors for Low-Voltage Power Applications von Saadat, Ali, Van de Put, Maarten L., Edwards, Hal, Vandenberghe, William G.

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Monte-Carlo study of electronic transport in non-σh-symmetric two-dimensional materials: Silicene and germanene von Gaddemane, Gautam, Vandenberghe, William G., Van de Put, Maarten L., Chen, Edward, Fischetti, Massimo V.

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Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcoge... von Gaddemane, Gautam, Gopalan, Sanjay, Van de Put, Maarten L., Fischetti, Massimo V.

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Electronic transport properties of hydrogenated and fluorinated graphene: a computational study von Khatami, Mohammad Mahdi, Gaddemane, Gautam, Van de Put, Maarten L, Moravvej-Farshi, Mohammad Kazem, Vandenberghe, William G

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Au-MoS2 contacts: Quantum transport simulations using a continuum description von Reyntjens, Peter D., Van de Put, Maarten L., Baikadi, Pranay, Kim, Raseong, Sorée, Bart, Vandenberghe, William G.

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Generation of empirical pseudopotentials for transport applications and their application to group IV materials von Laturia, Akash A., Van de Put, Maarten L., Vandenberghe, William G.

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Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study von Kramer, Aaron, Van de Put, Maarten L., Hinkle, Christopher L., Vandenberghe, William G.

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