(Invited, Digital Presentation) Langmuir-Type Formulation for Atomic-Order Surface Reactions of Reactant Gases on Si (100) and Ge (100) Surfaces von Murota, Junichi

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Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating von Ueno, Naofumi, Sakuraba, Masao, Murota, Junichi, Sato, Shigeo

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Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode von Kawashima, Tomoyuki, Sakuraba, Masao, Murota, Junichi

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Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating von Abe, Yusuke, Sakuraba, Masao, Murota, Junichi

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Langmuir-Type Mechanism for In-Situ Doping in CVD Silicon-Germanium Epitaxial Growth von Murota, Junichi

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Behavior of N atoms after thermal nitridation of Si1−xGex surface von Kawashima, Tomoyuki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

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Abrupt SiGe and Si Profile Fabrication by Introducing Carbon Delta Layer von Yamamoto, Yuji, Zaumseil, Peter, Schubert, Markus Andreas, Hesse, Anne, Murota, Junichi, Tillack, Bernd

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(Invited) Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing von Sakuraba, Masao, Murota, Junichi

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Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD von Nosaka, Takayuki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

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Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD von Sakuraba, Masao, Muto, Daisuke, Mori, Masaki, Sugawara, Katsutoshi, Murota, Junichi

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Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition von Tanno, Hiroki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

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Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si1−xGex Epitaxial Growth von Murota, Junichi, Ishii, Hiromu

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Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD system von Tanno, Hiroki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

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Langmuir-Type Expressions for In-Situ Co-Doping of C with B or P in Si1–xGex Epitaxial Growth by Chemical Vapor Deposition von Murota, Junichi, Ishii, Hiromu

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Langmuir-Type Expressions for In-Situ Co-Doping of C with B or P in Si 1–x Ge x Epitaxial Growth by Chemical Vapor Deposition von Murota, Junichi, Ishii, Hiromu

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Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si 1−x Ge x Epitaxial Growth von Murota, Junichi, Ishii, Hiromu

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(Invited) Atomically Controlled Processing for Si and Ge CVD Epitaxial Growth von Murota, Junichi, Yamamoto, Yuji, Costina, Ioan, Tillack, Bernd, Le Thanh, Vinh, Loo, Roger, Caymax, Matty

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Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation von Sakuraba, Masao, Sugawara, Katsutoshi, Murota, Junichi

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Formation and Characterization of Strained Si1-XGex Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating von Ueno, Naofumi, Sakuraba, Masao, Murota, Junichi, Sato, Shigeo

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Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating von Abe, Yusuke, Kubota, Shuji, Sakuraba, Masao, Murota, Junichi, Sato, Shigeo

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