Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth von Munshi, A. Mazid, Dheeraj, Dasa L, Fauske, Vidar T, Kim, Dong-Chul, van Helvoort, Antonius T. J, Fimland, Bjørn-Ove, Weman, Helge

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Advances in semiconductor nanowire growth on graphene von Mazid Munshi, A., Weman, Helge

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Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer von Heilmann, Martin, Munshi, A. Mazid, Sarau, George, Göbelt, Manuela, Tessarek, Christian, Fauske, Vidar T, van Helvoort, Antonius T. J, Yang, Jianfeng, Latzel, Michael, Hoffmann, Björn, Conibeer, Gavin, Weman, Helge, Christiansen, Silke

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Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy von Munshi, A. Mazid, Kim, Dong-Chul, Heimdal, Carl Philip, Heilmann, Martin, Christiansen, Silke H., Vullum, Per Erik, van Helvoort, Antonius T. J., Weman, Helge

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Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients von Huh, Junghwan, Yun, Hoyeol, Kim, Dong-Chul, Munshi, A. Mazid, Dheeraj, Dasa L, Kauko, Hanne, van Helvoort, Antonius T. J, Lee, SangWook, Fimland, Bjørn-Ove, Weman, Helge

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Self-catalyzed MBE grown GaAs/GaAsxSb1−x core-shell nanowires in ZB and WZ crystal structures von Ghalamestani, Sepideh Gorji, Mazid Munshi, A, Dheeraj, Dasa L, Fimland, Bjørn-Ove, Weman, Helge, Dick, Kimberly A

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Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si(111) von Munshi, Abdul Mazid, Dheeraj, Dasa L., Todorovic, Jelena, van Helvoort, Antonius T.J., Weman, Helge, Fimland, Bjørn-Ove

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New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays von Ren, Dingding, Dheeraj, Dasa L, Jin, Chengjun, Nilsen, Julie S, Huh, Junghwan, Reinertsen, Johannes F, Munshi, A. Mazid, Gustafsson, Anders, van Helvoort, Antonius T. J, Weman, Helge, Fimland, Bjørn-Ove

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Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients von Huh, Junghwan, Kim, Dong-Chul, Munshi, A Mazid, Dheeraj, Dasa L, Jang, Doyoung, Kim, Gyu-Tae, Fimland, Bjørn-Ove, Weman, Helge

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Growth optimization for self-catalyzed GaAs-based nanowires on metal-induced crystallized amorphous substrate von Ren, Dingding, Høiaas, Ida M., Reinertsen, Johannes F., Dheeraj, Dasa L., Munshi, A. Mazid, Kim, Dong-Chul, Weman, Helge, Fimland, Bjørn-Ove

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In Situ Heat-Induced Replacement of GaAs Nanowires by Au von Fauske, Vidar T, Huh, Junghwan, Divitini, Giorgio, Dheeraj, Dasa L, Munshi, A. Mazid, Ducati, Caterina, Weman, Helge, Fimland, Bjørn-Ove, van Helvoort, Antonius T. J

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Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure von Mukherjee, Anjan, Yun, Hoyeol, Shin, Dong Hoon, Nam, Jungtae, Munshi, A. Mazid, Dheeraj, Dasa L, Fimland, Bjørn-Ove, Weman, Helge, Kim, Keun Soo, Lee, Sang Wook, Kim, Dong-Chul

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Self-catalyzed MBE grown GaAs/GaAs x Sb 1− x core–shell nanowires in ZB and WZ crystal structures von Ghalamestani, Sepideh Gorji, Mazid Munshi, A, Dheeraj, Dasa L, Fimland, Bjørn-Ove, Weman, Helge, Dick, Kimberly A

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Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy von Munshi, A Mazid, Kim, Dong-Chul, Heimdal, Carl Philip J, Heilmann, Martin, Christiansen, Silke, Vullum, Per Erik, Van Helvoort, Antonius, Weman, Helge

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SEMICONDUCTOR DEVICES WITH HEXAGONAL BORON NITRIDE LAYERS von MUNSHI, Mazid, WEMAN, Helge, FIMLAND, Bjørn-Ove

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SEMICONDUCTOR DEVICES WITH STRUCTURES FOR EMITTING OR DETECTING LIGHT von MUNSHI, Mazid, WEMAN, Helge, FIMLAND, Bjørn-Ove

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SEMICONDUCTOR DEVICES WITH STRUCTURES FOR EMITTING OR DETECTING LIGHT von MUNSHI, Mazid, WEMAN, Helge, FIMLAND, Bjørn-Ove

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COMPOSITION OF MATTER von FIMLAND, Bjorn-Ove M, MUNSHI, Mazid, WEMAN, Helge

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COMPOSITION OF MATTER von FIMLAND, Bjorn-Ove M, MUNSHI, Mazid, WEMAN, Helge

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SEMICONDUCTOR DEVICES WITH STRUCTURES FOR EMITTING OR DETECTING LIGHT von MUNSHI, Mazid, WEMAN, Helge, FIMLAND, Bjørn-Ove

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