Co-integration of high speed InP-based HBTs and RTDs using chemical beam epitaxy von Chen, W.L., Munns, G.O., Wang, X., Haddad, G.I.

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The growth of resonant tunneling hot electron transistors using chemical beam epitaxy von Chen, W.L., Munns, G.O., Davis, L., Bhattacharya, P.K., Haddad, G.I.

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INGAAS/INP HOT-ELECTRON TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY von CHEN, WL, SUN, JP, HADDAD, GI, SHERWIN, ME, MUNNS, GO, EAST, MAINS, RK

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The growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 μm von Sherwin, M.E., Munns, G.O., Nichols, D.T., Bhattacharya, P.K., Terry, F.L.

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Double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE von Yang, K., Munns, G.O., Wang, X., Haddad, G.I.

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The optimization of InxGa1-xAs and InP growth conditions by CBE von SHERWIN, M. E, MUNNS, G. O, ELTA, M. E, WOELK, E. G, CRARY, S. B, TERRY, F. L, HADDAD, G. I

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The design of an ECR plasma system and its application to InP grown by CBE von Sherwin, M.E., Munns, G.O., Woelk, E.G., Drummond, T.J., Elta, M.E., Terry, F.L., Haddad, G.I.

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The growth of high quality InP/InGaAs/InGaAsP interfaces by CBE for SCH multi-quantum well lasers von SHERWIN, M. E, NICHOLS, D. T, MUNNS, G. O, BHATTACHARYA, P. K, HADDAD, G. I

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InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE von Yang, Munns, East, Haddad

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InGaAs/AlAs/InGaAsP resonant tunneling bipolar transistors grown by chemical beam epitaxy von Chen, W.L., Munns, G.O., Knightly, D., East, J.R., Haddad, G.I.

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InAlAs/InGaAs heterojunction bipolar transistors grown by chemical beam epitaxy (CBE) von Cowles, J.C., Chen, W.L., Munns, G.O., Haddad, G.I.

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