Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells von Sasayama, K., Nakanishi, S., Yamaguchi, R., Oyanagi, Y., Ushimi, T., Gozu, S., Mozume, T., Tackeuchi, A.

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Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers von Kasai, J., Mozume, T.

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Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy von Mozume, T., Kasai, J.

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1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells von Akiyama, T., Georgiev, N., Mozume, T., Yoshida, H., Gopal, A.V., Wada, O.

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Indices of refraction of AlGaAsSb by an optical waveguide technique von Mozume, T., Simoyama, T., Ishikawa, H.

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Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy von Mozume, T., Kasai, J.

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Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy von Mozume, T., Kasai, J., Nagase, M., Simoyama, T., Ishikawa, H.

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Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy von Mozume, T, Georgiev, N, Yoshida, H

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Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures von Mozume, T., Gozu, S.

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Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum-well structures von Neogi, A., Yoshida, H., Mozume, T., Georgiev, N., Wada, O.

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Molecular beam epitaxy and characterization of InGaAs∕AlAs∕AlAsSb coupled double quantum wells with extremely thin coupling barriers von Mozume, T., Gozu, S.

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Photoluminescence and photoreflectance characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy von Mozume, T, Georgiev, N

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Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells von Gopal, A. V., Yoshida, H., Simoyama, T., Georgiev, N., Mozume, T., Ishikawa, H.

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Intersubband absorption saturation in InGaAs-AlAs-AlAsSb coupled quantum wells von Gopal, A.V., Simoyama, T., Yoshida, H., Jun-ichi Kasai, Mozume, T., Ishikawa, H.

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Intersubband absorption generation through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells towards monolithic integration of intersubband-transition-... von Cong, G W, Akimoto, R, Gozu, S, Mozume, T, Hasama, T, Ishikawa, H

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Enhancement of interband optical nonlinearity by manipulation of intersubband transitions in an undoped semiconductor quantum well von Neogi, A, Yoshida, H, Mozume, T, Wada, O

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Understanding the ultra-low intersubband saturation intensity in InGaAs-AlAsSb quantum wells von Gopal, A.V., Yoshida, H., Simoyama, T., Georgiev, N., Mozume, T., Ishikawa, H.

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InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550 nm von GOZU, Shin-Ichiro, MOZUME, Teruo, KUWATSUKA, Haruhiko, ISHIKAWA, Hiroshi

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Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well von Gopal, A V, Yoshida, H, Neogi, A, Mozume, T, Georgiev, N, Simoyama, T, Wada, O, Ishikawa, H

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Magneto-photoluminescence study of InGaAs/InP and InGaAs/AlAsSb quantum wells von Mozume, T, Kasai, J, Gopal, A.V, Kotera, N

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