CCD soft X-ray imaging spectrometer for the ASCA satellite von Burke, B.E., Mountain, R.W., Daniels, P.J., Cooper, M.J., Dolat, V.S.

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Damage induced in Si by ion milling or reactive ion etching von PANG, S. W, RATHMAN, D. D, SILVERSMITH, D. J, MOUNTAIN, R. W, DEGRAFF, P. D

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Solidification-front modulation to entrain subboundaries in zone-melting recrystallization of Si on SiO2 von GEIS, M. W, SMITH, H. I, SILVERSMITH, D. J, MOUNTAIN, R. W, THOMPSON, C. V

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Integrated electronic shutter for back-illuminated charge-coupled devices von Reich, R.K., Mountain, R.W., McGonagle, W.H., Huang, J.C.-M., Twichell, J.C., Kosicki, B.B., Savoye, E.D.

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An abuttable CCD imager for visible and X-ray focal plane arrays von Burke, B.E., Mountain, R.W., Harrison, D.C., Bautz, M.W., Doty, J.P., Ricker, G.R., Daniels, P.J.

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Planar GaAs p-i-n photodiode with picosecond time response von LENTH, W, CHU, A, MAHONEY, L. J, MCCLELLAND, R. W, MOUNTAIN, R. W, SILVERSMITH, D. J

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Characterization of low pressure chemically vapor deposited silicon nitride using experimental design von Gregory, J.A., Young, Douglas J., Mountain, R.W., Doherty, C.L.

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Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI Films von Tsaur, B-Y., Sferrino, V. J., Choi, H. K., Chen, C. K., Mountain, R. W., Schott, J. T., Shedd, W. M., LaPierre, D. C., Blanchard, R.

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Laser microchemical techniques for reversible restructuring of gate-array prototype circuits von Ehrlich, D.J., Tsao, J.Y., Silversmith, D.J., Sedlacek, J.H.C., Mountain, R.W., Graber, W.S.

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Fully isolated lateral bipolar-MOS transistors fabricated in zone-melting-recrystallized Si films on SiO2 von Tsaur, B.-Y., Silversmith, D.J., Fan, J.C.C., Mountain, R.W.

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Silicon graphoepitaxy using a strip-heater oven von Geis, M. W., Antoniadis, D. A., Silversmith, D. J., Mountain, R. W., Smith, Henry I.

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Use of zone-melting recrystallization to fabricate a three-dimensional structure incorporating power bipolar and field-effect transistors von Geis, M.W., Chen, C.K., Mountain, R.W., Economou, N.P., Lindley, W.T., Hower, P.L.

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Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidification von Tsaur, B-Y., Fan, John C. C., Geis, M. W., Silversmith, D. J., Mountain, R. W.

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Monolithic silicon bolometers von Downey, P M, Jeffries, A D, Meyer, S S, Weiss, R, Bachner, F J, Donnelly, J P, Lindley, W T, Mountain, R W, Silversmith, D J

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Effects of ionizing radiation on SOI/CMOS Devices fabricated in zone-melting-recrystallized Si films on SiO2 von Tsaur, B.-Y., Mountain, R.W., Chen, C.K., Turner, G.W., Fan, J.C.C.

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n -channel deep-depletion metal-oxide-semiconductor field-effect transistors fabricated in zone-melting-recrystallized polycrystalline Si films on SiO2 von Tsaur, B-Y., Geis, M. W., Fan, John C. C., Silversmith, D. J., Mountain, R. W.

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Electron-beam programmable 128K-bit wafer-scale EPROM von Shaver, D.C., Mountain, R.W., Silversmith, D.J.

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Direct-write metallization of Silicon MOSFET's using laser photodeposition von Tsao, J.Y., Ehrlich, D.J., Silversmith, D.J., Mountain, R.W.

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SOI/CMOS circuits fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates von Tsaur, B.Y., Fan, J.C.C., Chapman, R.L., Geis, M.W., Silversmith, D.J., Mountain, R.W.

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An epitaxially-grown charge modulation device von Reich, R.K., Mountain, R.W., Robinson, M., McGonagle, W.H., Loomis, A.H., Kosicki, B.B., Savoye, E.D.

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