Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates von Karrakchou, Soufiane, Sundaram, Suresh, Ayari, Taha, Mballo, Adama, Vuong, Phuong, Srivastava, Ashutosh, Gujrati, Rajat, Ahaitouf, Ali, Patriarche, Gilles, Leichlé, Thierry, Gautier, Simon, Moudakir, Tarik, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

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BAlN thin layers for deep UV applications von Li, Xin, Sundaram, Suresh, Gmili, Youssef El, Moudakir, Tarik, Genty, Frédéric, Bouchoule, Sophie, Patriarche, Gilles, Dupuis, Russell D., Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah

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Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors von Ravindran, Vinod, Boucherit, Mohamed, Soltani, Ali, Gautier, Simon, Moudakir, Tarik, Dickerson, Jeramy, Voss, Paul L., di Forte-Poisson, Marie-Antoinette, De Jaeger, Jean-Claude, Ougazzaden, Abdallah

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High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere von Taher, Md. Iktiham Bin, Kumar, Mohit, Halfaya, Yacine, Lazerges, Mathieu, Sama, Nossikpendou Yves, Bouzid, Karim, Moudakir, Tarik, Ngo, Thi Huong, Bouhnane, Hafsa, Othmani, Safa, Randi, Aurelien, Guermont, Thomas, Pironon, Jacques, Gautier, Simon

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Control of the Mechanical Adhesion of III–V Materials Grown on Layered h‑BN von Vuong, Phuong, Sundaram, Suresh, Mballo, Adama, Patriarche, Gilles, Leone, Stefano, Benkhelifa, Fouad, Karrakchou, Soufiane, Moudakir, Tarik, Gautier, Simon, Voss, Paul L, Salvestrini, Jean-Paul, Ougazzaden, Abdallah

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Bandgap energy bowing parameter of strained and relaxed InGaN layers von Orsal, G., El Gmili, Y., Fressengeas, N., Streque, J., Djerboub, R., Moudakir, T., Sundaram, S., Ougazzaden, A., Salvestrini, J.P.

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Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer von Perepeliuc, Andre, Gujrati, Rajat, Vuong, Phuong, Ottapilakkal, Vishnu, Tran, Thi May, Bouras, Mohamed, Kassem, Ali, Srivastava, Ashutosh, Moudakir, Tarik, Patriarche, Gilles, Voss, Paul, Sundaram, Suresh, Salvestrini, Jean Paul, Ougazzaden, Abdallah

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Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template von Gujrati, Rajat, Srivastava, Ashutosh, Vuong, Phuong, Ottapilakkal, Vishnu, Sama, Yves N., Ngo, Thi Huong, Moudakir, Tarik, Patriarche, Gilles, Gautier, Simon, Voss, Paul L., Sundaram, Suresh, Salvestrini, Jean Paul, Ougazzaden, Abdallah

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Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices von Vuong, Phuong, Sundaram, Suresh, Ottapilakkal, Vishnu, Patriarche, Gilles, Largeau, Ludovic, Srivastava, Ashutosh, Mballo, Adama, Moudakir, Tarik, Gautier, Simon, Voss, Paul L, Salvestrini, Jean-Paul, Ougazzaden, Abdallah

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Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates von Vuong, Phuong, Moudakir, Tarik, Gujrati, Rajat, Srivastava, Ashutosh, Ottapilakkal, Vishnu, Gautier, Simon, Voss, Paul L., Sundaram, Suresh, Salvestrini, Jean Paul, Ougazzaden, Abdallah

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Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer von Rajan, Akhil, Rogers, David J, Ton-That, Cuong, Zhu, Liangchen, Phillips, Matthew R, Sundaram, Suresh, Gautier, Simon, Moudakir, Tarik, El-Gmili, Youssef, Ougazzaden, Abdallah, Sandana, Vinod E, Teherani, Ferechteh H, Bove, Philippe, Prior, Kevin A, Djebbour, Zakaria, McClintock, Ryan, Razeghi, Manijeh

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Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells von Gorge, V., Migan-Dubois, A., Djebbour, Z., Pantzas, K., Gautier, S., Moudakir, T., Suresh, S., Ougazzaden, A.

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Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm von Moudakir, T., Genty, F., Kunzer, M., Borner, P., Passow, T., Suresh, S., Patriarche, G., Kohler, K., Pletschen, W., Wagner, J., Ougazzaden, A.

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Modeling of polarization effects on n-GaN/i-InGaN/p-Gan solar cells with ultrathin GaN interlayers von Dickerson, Jeramy, Pantzas, Konstantinos, Moudakir, Tarik, Ougazzaden, Abdallah, Voss, Paul L.

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Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content von Gautier, S., Orsal, G., Moudakir, T., Maloufi, N., Jomard, F., Alnot, M., Djebbour, Z., Sirenko, A.A., Abid, M., Pantzas, K., Ferguson, I.T., Voss, P.L., Ougazzaden, A.

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A study of BGaN back-barriers for AlGaN/GaN HEMTs von Dickerson, Jeramy R., Ravindran, Vinod, Moudakir, Tarik, Gautier, Simon, Voss, Paul L., Ougazzaden, Abdallah

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Microstructural, Compositional & Optical Characteristics of GaN Grown by MOVPE on ZnO Epilayers von Rogers, Dave J., Hosseini-Teherani, Ferecteh, Moudakir, Tarik, Gautier, Simon, Jomard, François, Molinari, Michaël, Troyon, Michel, Mcgrouther, Damien, Chapman, John N., Razeghi, Manijeh, Ougazzaden, Abdallah

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Structural and morphological studies of GaN thin films grown on different oriented LiNbO 3 substrates by MOVPE von Moudakir, T., Orsal, G., Maloufi, N., Sirenko, A. A., Gautier, S., Bouchaour, M., Ould Saad, S., Salvestrini, J. P., Ougazzaden, A.

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DISPOSITIF SEMICONDUCTEUR COMPORTANT UN CONDENSATEUR DE DECOUPLAGE A STRUCTURE STRATIFIEE von GAUTIER, Simon, SAMA, Nossikpendou, MOUDAKIR, Tarik, PETIT, Mickael, NGO, Huong, ROY, FRANCIS

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PROCEDE DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR COMPORTANT UNE STRUCTURE DE PONT RENFORCEE, ET CIRCUIT INTEGRE von PEUCHANT, Thomas, GAUTIER, Simon, SAMA, Nossikpendou, MOUDAKIR, Tarik, PETIT, Mickael, NGO, Huong, ROY, FRANCIS, HERPE, David

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