Local structure analysis of an optically active center in Er-doped ZnO thin film von Ishii, Masashi, Komuro, Shuji, Morikawa, Takitaro, Aoyagi, Yoshinobu

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Characteristics of Strontium Aluminate Crystals Used for Long-Duration Phosphors von Katsumata, Tooru, Sasajima, Kazuhito, Nabae, Takehiko, Komuro, Shuji, Morikawa, Takitaro

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Change in photoluminescence from Er-doped TiO2 thin films induced by optically assisted reduction von Komuro, Shuji, Katsumata, Tooru, Kokai, Hideki, Morikawa, Takitaro, Zhao, Xinwei

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Site-selective x-ray absorption fine structure analysis of an optically active center in Er-doped semiconductor thin film using x-ray-excited optical luminescence von Ishii, Masashi, Tanaka, Yoshihito, Ishikawa, Tetsuya, Komuro, Shuji, Morikawa, Takitaro, Aoyagi, Yoshinobu

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The optically active center and its activation process in Er-doped Si thin film produced by laser ablation von Ishii, Masashi, Ishikawa, Tetsuya, Ueki, Tatzuo, Komuro, Shuji, Morikawa, Takitaro, Aoyagi, Yoshinobu, Oyanagi, Hiroyuki

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Characterization of Trap States at Silicon-On-Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs von Nakajima, Yoshikata, Tomita, Hideki, Aoto, Kenichi, Ito, Nobuhiro, Hanajiri, Tatsuro, Toyabe, Toru, Morikawa, Takitaro, Sugano, Takuo

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Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation von Komuro, Shuji, Maruyama, Shinya, Morikawa, Takitaro, Zhao, Xinwei, Isshiki, Hideo, Aoyagi, Yoshinobu

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Room-temperature backbond oxidation of the porous silicon surface by oxygen radical irradiation von O’Keeffe, Patrick, Aoyagi, Yoshinobu, Komuro, Shuji, Kato, Takashi, Morikawa, Takitaro

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Study on atomic coordination around Er doped into anatase– and rutile– TiO2: Er–O clustering dependent on the host crystal phase von Ishii, Masashi, Komuro, Shuji, Morikawa, Takitaro

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1.54 μm emission dynamics of erbium-doped zinc-oxide thin films von Komuro, Shuji, Katsumata, Tooru, Morikawa, Takitaro, Zhao, Xinwei, Isshiki, Hideo, Aoyagi, Yoshinobu

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Highly erbium-doped zinc–oxide thin film prepared by laser ablation and its 1.54 μm emission dynamics von Komuro, Shuji, Katsumata, Tooru, Morikawa, Takitaro, Zhao, Xinwei, Isshiki, Hideo, Aoyagi, Yoshinobu

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Development and applications of a compact electron cyclotron resonance source von O'KEEFFE, P, KOMURO, S, DEN, S, MORIKAWA, T, AOYAGI, Y

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Erratum to "A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs" [Thin Solid Films 462–463 (2004) 6–10] von Nakajima, Yoshikata, Tomita, Hideki, Aoto, Kenichi, Sasaki, Kenji, Hanajiri, Tatsuro, Toyabe, Toru, Morikawa, Takitaro, Sugano, Takuo

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Time response of 1.54 μm emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation von Komuro, Shuji, Katsumata, Tooru, Morikawa, Takitaro, Zhao, Xinwei, Isshiki, Hideo, Aoyagi, Yoshinobu

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The irradiation effects of an oxygen radical beam on the preparation of superconducting thin films von O'KEEFFE, P, KOMURO, S, DEN, S, MORIKAWA, T, AOYAGHI, Y

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Radical-beam-induced surface reaction processes of porous Si von O'KEEFFE, P, KOMURO, S, KATO, T, MORIKAWA, T, AOYAGI, Y

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Reversible reconstruction changes in GaAs surfaces due to hydrogen termination von O'KEEFFE, P, O'MORAIN, C, KOMURO, S, ISHII, M, MEGURO, T, IIMURA, Y, DEN, S, MORIKAWA, T, AOYAGI, Y

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Zinc-oxide film synthesized by ECR oxygen plasma von KOKAI, H, KASHIWAGI, K, SAKAMOTO, Y, MORIKAWA, T, MURAYAMA, Y

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A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs von Nakajima, Yoshikata, Tomita, Hideki, Aoto, Kenichi, Sasaki, Kenji, Hanajiri, Tatsuro, Toyabe, Toru, Morikawa, Takitaro, Sugano, Takuo

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Observation of a Visible Line Emission from RF and ECR Oxygen Plasmas von Sakamoto, Yuichi, Kokai, Hideki, Komuro, Shuji, Uchiyama, Tomoo, Kashiwagi, Kunihiro, Morikawa, Takitaro, Murayama, Yoichi

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