Inelastic cotunneling in the Coulomb-blockade transport of donor-atom transistors von Yadav, Pooja, Chakraborty, Soumya, Moraru, Daniel, Samanta, Arup

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Phosphorous doped p-type MoS2 polycrystalline thin films via direct sulfurization of Mo film von Momose, Tomohiro, Nakamura, Atsushi, Daniel, Moraru, Shimomura, Masaru

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Precise Deposition of Carbon Nanotube Bundles by Inkjet-Printing on a CMOS-Compatible Platform von Singh, Rohitkumar Shailendra, Takagi, Katsuyuki, Aoki, Toru, Moon, Jong Hyun, Neo, Yoichiro, Iwata, Futoshi, Mimura, Hidenori, Moraru, Daniel

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Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors von Yadav, Pooja, Chakraborty, Soumya, Moraru, Daniel, Samanta, Arup

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Electron aspirator using electron–electron scattering in nanoscale silicon von Firdaus, Himma, Watanabe, Tokinobu, Hori, Masahiro, Moraru, Daniel, Takahashi, Yasuo, Fujiwara, Akira, Ono, Yukinori

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Band-to-band tunneling mechanism observed at room temperature in lateral non-degenerately doped nanoscale p-n and p-i-n silicon devices von Udhiarto, Arief, Nuryadi, Ratno, Anwar, Miftahul, Prabhudesai, Gaurang, Moraru, Daniel

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Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors von Samanta, Arup, Muruganathan, Manoharan, Hori, Masahiro, Ono, Yukinori, Mizuta, Hiroshi, Tabe, Michiharu, Moraru, Daniel

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Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes von Prabhudesai, Gaurang, Muruganathan, Manoharan, Anh, Le The, Mizuta, Hiroshi, Hori, Masahiro, Ono, Yukinori, Tabe, Michiharu, Moraru, Daniel

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Single-electron transport through single dopants in a dopant-rich environment von Tabe, Michiharu, Moraru, Daniel, Ligowski, Maciej, Anwar, Miftahul, Jablonski, Ryszard, Ono, Yukinori, Mizuno, Takeshi

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Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors von Jupalli, Taruna Teja, Debnath, Ananta, Prabhudesai, Gaurang, Yamaguchi, Kensuke, Kumar, P. Jeevan, Ono, Yukinori, Moraru, Daniel

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Transport spectroscopy of coupled donors in silicon nano-transistors von Moraru, Daniel, Samanta, Arup, Anh, Le The, Mizuno, Takeshi, Mizuta, Hiroshi, Tabe, Michiharu

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Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors von Samanta, Arup, Moraru, Daniel, Mizuno, Takeshi, Tabe, Michiharu

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Crystalline Flat Surface Recovered by High-Temperature Annealing after Laser Ablation von Smith, Daniel, Ng, Soon Hock, Tang, Amanda, Katkus, Tomas, Moraru, Daniel, Juodkazis, Saulius

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Atom devices based on single dopants in silicon nanostructures von Moraru, Daniel, Udhiarto, Arief, Anwar, Miftahul, Nowak, Roland, Jablonski, Ryszard, Hamid, Earfan, Tarido, Juli Cha, Mizuno, Takeshi, Tabe, Michiharu

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Electron-tunneling operation of single-donor-atom transistors at elevated temperatures von Hamid, Earfan, Moraru, Daniel, Kuzuya, Youhei, Mizuno, Takeshi, Anh, Le The, Mizuta, Hiroshi, Tabe, Michiharu

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Effects of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope von Nowak, Roland, Moraru, Daniel, Mizuno, Takeshi, Jablonski, Ryszard, Tabe, Michiharu

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Detection of single holes generated by impact ionization in silicon von Firdaus, Himma, Watanabe, Tokinobu, Hori, Masahiro, Moraru, Daniel, Takahashi, Yasuo, Fujiwara, Akira, Ono, Yukinori

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Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors von Pandy, Chitra, Prabhudesai, Gaurang, Yamaguchi, Kensuke, Ramakrishnan, V N, Neo, Yoichiro, Mimura, Hidenori, Moraru, Daniel

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Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires von Moraru, Daniel, Ono, Yukinori, Inokawa, Hiroshi, Tabe, Michiharu

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Single-Charge Tunneling in Codoped Silicon Nanodevices von Moraru, Daniel, Kaneko, Tsutomu, Tamura, Yuta, Jupalli, Taruna Teja, Singh, Rohitkumar Shailendra, Pandy, Chitra, Popa, Luminita, Iacomi, Felicia

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