Field-Effect Transistors Based on Few-Layered α‑MoTe2 von Pradhan, Nihar R, Rhodes, Daniel, Feng, Simin, Xin, Yan, Memaran, Shahriar, Moon, Byoung-Hee, Terrones, Humberto, Terrones, Mauricio, Balicas, Luis

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Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h‑BN Heterostructure von Joo, Min-Kyu, Moon, Byoung Hee, Ji, Hyunjin, Han, Gang Hee, Kim, Hyun, Lee, Gwanmu, Lim, Seong Chu, Suh, Dongseok, Lee, Young Hee

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Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors von Moon, Byoung Hee, Han, Gang Hee, Kim, Hyun, Choi, Homin, Bae, Jung Jun, Kim, Jaesu, Jin, Youngjo, Jeong, Hye Yun, Joo, Min-Kyu, Lee, Young Hee, Lim, Seong Chu

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Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2 von Moon, Byoung Hee, Bae, Jung Jun, Joo, Min-Kyu, Choi, Homin, Han, Gang Hee, Lim, Hanjo, Lee, Young Hee

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Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides von Kim, Hyun, Han, Gang Hee, Yun, Seok Joon, Zhao, Jiong, Keum, Dong Hoon, Jeong, Hye Yun, Ly, Thuc Hue, Jin, Youngjo, Park, Ji-Hoon, Moon, Byoung Hee, Kim, Sung-Wng, Lee, Young Hee

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Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h‑BN Buffer Layer von Joo, Min-Kyu, Moon, Byoung Hee, Ji, Hyunjin, Han, Gang Hee, Kim, Hyun, Lee, Gwanmu, Lim, Seong Chu, Suh, Dongseok, Lee, Young Hee

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Bridging terahertz metal slot antenna with parameterized electrical conductivity: insights from finite element method and microscopic theory von Kim, Taehoon, Lee, Ki Hoon, Lee, Geonwoo, Im, Jaechan, Lim, Dong Ju, Kim, Seonghun, Hong, Sung Ju, Moon, Byoung Hee, Bahk, Young-Mi

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Metal-insulator transition in two-dimensional transition metal dichalcogenides von Moon, Byoung Hee

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GeAs as an emerging p-type van der Waals semiconductor and its application in p–n photodiodes von Kim, Jung Ho, Han, Gang Hee, Moon, Byoung Hee

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Anti-ambipolar transport and logic operation in two-dimensional field-effect transistors using in-series integration of GeAs and SnS2 von Kim, Jung Ho, Moon, Byoung Hee, Han, Gang Hee

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Thickness-dependent in-plane thermal conductivity of suspended MoS2 grown by chemical vapor deposition von Bae, Jung Jun, Jeong, Hye Yun, Han, Gang Hee, Kim, Jaesu, Kim, Hyun, Kim, Min Su, Moon, Byoung Hee, Lim, Seong Chu, Lee, Young Hee

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Electrical Transport Properties of Polymorphic MoS2 von Kim, Jun Suk, Kim, Jaesu, Zhao, Jiong, Kim, Sungho, Lee, Jin Hee, Jin, Youngjo, Choi, Homin, Moon, Byoung Hee, Bae, Jung Jun, Lee, Young Hee, Lim, Seong Chu

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Edge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors von Choi, Homin, Moon, Byoung Hee, Kim, Jung Ho, Yun, Seok Joon, Han, Gang Hee, Lee, Sung-gyu, Gul, Hamza Zad, Lee, Young Hee

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Anomalous Conductance near Percolative Metal–Insulator Transition in Monolayer MoS2 at Low Voltage Regime von Moon, Byoung Hee, Bae, Jung Jun, Han, Gang Hee, Kim, Hyun, Choi, Homin, Lee, Young Hee

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Photocurrent Switching of Monolayer MoS2 Using a Metal–Insulator Transition von Lee, Jin Hee, Gul, Hamza Zad, Kim, Hyun, Moon, Byoung Hee, Adhikari, Subash, Kim, Jung Ho, Choi, Homin, Lee, Young Hee, Lim, Seong Chu

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Anomalous Conductance near Percolative Metal-Insulator Transition in Monolayer MoS 2 at Low Voltage Regime von Moon, Byoung Hee, Bae, Jung Jun, Han, Gang Hee, Kim, Hyun, Choi, Homin, Lee, Young Hee

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Continuous Template Growth of Large-Scale Tellurene Films on 1T′-MoTe2 von Park, Jin Young, Moon, Min Soo, Lee, Heewoo, Kim, Dongil, Park, Hajung, Kim, Jae Woo, Ko, Hayoung, Ha, Taewoo, Kim, Jeongwoo, Bahk, Young-Mi, Moon, Byoung Hee, Kim, Ki Kang, Park, Seung Ryong, Choi, Soobong, Sebait, Riya, Kim, Jung Ho, Lee, Young Hee, Han, Gang Hee

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Continuous Template Growth of Large-Scale Tellurene Films on 1T'-MoTe 2 von Park, Jin Young, Moon, Min Soo, Lee, Heewoo, Kim, Dongil, Park, Hajung, Kim, Jae Woo, Ko, Hayoung, Ha, Taewoo, Kim, Jeongwoo, Bahk, Young-Mi, Moon, Byoung Hee, Kim, Ki Kang, Park, Seung Ryong, Choi, Soobong, Sebait, Riya, Kim, Jung Ho, Lee, Young Hee, Han, Gang Hee

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Temperature dependence of velocity saturation in a multilayer molybdenum disulfide transistor von Moon, Byoung Hee, Ji, Hyunjin, Bae, Jung Jun, Lee, Young Hee

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Sensitive photo-thermal response of graphene oxide for mid-infrared detection von Bae, Jung Jun, Yoon, Jung Hyun, Jeong, Sooyeon, Moon, Byoung Hee, Han, Joong Tark, Jeong, Hee Jin, Lee, Geon-Woong, Hwang, Ha Ryong, Lee, Young Hee, Jeong, Seung Yol, Lim, Seong Chu

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