Synthesis and Applications of III–V Nanowires von Barrigón, Enrique, Heurlin, Magnus, Bi, Zhaoxia, Monemar, Bo, Samuelson, Lars

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Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor p... von Higashiwaki, Masataka, Konishi, Keita, Sasaki, Kohei, Goto, Ken, Nomura, Kazushiro, Thieu, Quang Tu, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Koukitu, Akinori, Kuramata, Akito, Yamakoshi, Shigenobu

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Spatially resolved Hall effect measurement in a single semiconductor nanowire von Storm, Kristian, Halvardsson, Filip, Heurlin, Magnus, Lindgren, David, Gustafsson, Anders, Wu, Phillip M., Monemar, Bo, Samuelson, Lars

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Electron paramagnetic resonance and theoretical study of gallium vacancy in β-Ga2O3 von Son, Nguyen Tien, Ho, Quoc Duy, Goto, Ken, Abe, Hiroshi, Ohshima, Takeshi, Monemar, Bo, Kumagai, Yoshinao, Frauenheim, Thomas, Deák, Peter

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High In-content InGaN nano-pyramids: Tuning crystal homogeneity by optimized nucleation of GaN seeds von Bi, Zhaoxia, Gustafsson, Anders, Lenrick, Filip, Lindgren, David, Hultin, Olof, Wallenberg, L. Reine, Ohlsson, B. Jonas, Monemar, Bo, Samuelson, Lars

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Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0 0 0 1) substrates von Nakahata, Hidetoshi, Togashi, Rie, Goto, Ken, Monemar, Bo, Kumagai, Yoshinao

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InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes von Bi, Zhaoxia, Lenrick, Filip, Colvin, Jovana, Gustafsson, Anders, Hultin, Olof, Nowzari, Ali, Lu, Taiping, Wallenberg, Reine, Timm, Rainer, Mikkelsen, Anders, Ohlsson, B. Jonas, Storm, Kristian, Monemar, Bo, Samuelson, Lars

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Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence von Pozina, Galia, Ciechonski, Rafal, Bi, Zhaoxia, Samuelson, Lars, Monemar, Bo

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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD von Gogova, Daniela, Ghezellou, Misagh, Tran, Dat Q., Richter, Steffen, Papamichail, Alexis, Hassan, Jawad ul, Persson, Axel R., Persson, Per O. Å., Kordina, Olof, Monemar, Bo, Hilfiker, Matthew, Schubert, Mathias, Paskov, Plamen P., Darakchieva, Vanya

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Dependence of thermal stability of GaN on substrate orientation and off-cut von Yoshida, Kento, Yamanobe, Sakiko, Konishi, Keita, Takashima, Shinya, Edo, Masaharu, Monemar, Bo, Kumagai, Yoshinao

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Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy von Hirasaki, Takahide, Eriksson, Martin, Thieu, Quang Tu, Karlsson, Fredrik, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Holtz, Per Olof, Koukitu, Akinori

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High rate InN growth by two-step precursor generation hydride vapor phase epitaxy von Togashi, Rie, Thieu, Quang Tu, Murakami, Hisashi, Kumagai, Yoshinao, Ishitani, Yoshihiro, Monemar, Bo, Koukitu, Akinori

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Influence of high-temperature processing on the surface properties of bulk AlN substrates von Tojo, Shunsuke, Yamamoto, Reo, Tanaka, Ryohei, Thieu, Quang Tu, Togashi, Rie, Nagashima, Toru, Kinoshita, Toru, Dalmau, Rafael, Schlesser, Raoul, Murakami, Hisashi, Collazo, Ramón, Koukitu, Akinori, Monemar, Bo, Sitar, Zlatko, Kumagai, Yoshinao

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High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy von Togashi, Rie, Numata, Shiyu, Hayashida, Mayuko, Suga, Takayuki, Goto, Ken, Kuramata, Akito, Yamakoshi, Shigenobu, Paskov, Plamen, Monemar, Bo, Kumagai, Yoshinao

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Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties von Goto, Ken, Konishi, Keita, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Higashiwaki, Masataka, Kuramata, Akito, Yamakoshi, Shigenobu

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Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2 von Togashi, Rie, Kisanuki, Yumi, Goto, Ken, Murakami, Hisashi, Kuramata, Akito, Yamakoshi, Shigenobu, Monemar, Bo, Koukitu, Akinori, Kumagai, Yoshinao

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Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy von Hirasaki, Takahide, Hasegawa, Tomoyasu, Meguro, Misaki, Thieu, Quang Tu, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Koukitu, Akinori

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Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors von Gil, Bernard, Bigenwald, Pierre, Paskov, Plamen P., Monemar, Bo

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Defect related issues in the “current roll-off” in InGaN based light emitting diodes von Monemar, B., Sernelius, B. E.

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Luminescence of Acceptors in Mg-Doped GaN von Monemar, Bo, Khromov, Sergey, Pozina, Galia, Paskov, Plamen, Bergman, Peder, Hemmingsson, Carl, Hultman, Lars, Amano, Hiroshi, Avrutin, Vitaliy, Li, Xing, Morko\{c}, Hadis

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