Change of Editor-in-Chief von Momose, Hisayo S.

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Control of Charge Dynamics through a Charge-Separation Interface for All-Solid Perovskite-Sensitized Solar Cells von Ogomi, Yuhei, Kukihara, Kenji, Qing, Shen, Toyoda, Taro, Yoshino, Kenji, Pandey, Shyam, Momose, Hisayo, Hayase, Shuzi

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Huge suppression of charge recombination in P3HT-ZnO organic-inorganic hybrid solar cells by locating dyes at the ZnO/P3HT interfaces von QING SHEN, OGOMI, Yuhei, DAS, Sandeep K, PANDEY, Shyam S, YOSHINO, Kenji, KATAYAMA, Kenji, MOMOSE, Hisayo, TOYODA, Taro, HAYASE, Shuzi

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Change of Editor-in-Chief von Momose, Hisayo S.

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Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model von Higashi, Yusuke, Momo, Nobuyuki, Sasaki, Hiroki, Momose, Hisayo Sasaki, Ohguro, Tatsuya, Mitani, Yuichiro, Ishihara, Takamitsu, Matsuzawa, Kazuya

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Huge suppression of charge recombination in P3HT-ZnO organic-inorganic hybrid solar cells by locating dyes at the ZnO/P3HT interfacesElectronic supplementary information (ESI) avai... von Shen, Qing, Ogomi, Yuhei, Das, Sandeep K, Pandey, Shyam S, Yoshino, Kenji, Katayama, Kenji, Momose, Hisayo, Toyoda, Taro, Hayase, Shuzi

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1.5 nm direct-tunneling gate oxide Si MOSFET's von Sasaki, H., Ono, M., Yoshitomi, T., Ohguro, T., Nakamura, S., Saito, M., Iwai, H.

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1.5-nm gate oxide CMOS on [110] surface-oriented Si substrate von Momose, H.S., Ohguro, T., Kojima, K., Nakamura, S., Toyoshima, Y.

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Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI von Morimoto, T., Ohguro, T., Momose, S., Iinuma, T., Kunishima, I., Suguro, K., Katakabe, I., Nakajima, H., Tsuchiaki, M., Ono, M., Katsumata, Y., Iwai, H.

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A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation von Yoshitomi, Takashi, Kimijima, Hideki, Ishizuka, Shinnichiro, Miyahara, Yasunori, Ohguro, Tatsuya, Morifuji, Eiji, Morimoto, Toyota, Sasaki Momose, Hisayo, Katsumata, Yasuhiro, Iwai, Hiroshi

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Ultrathin gate oxide CMOS on [111] surface-oriented Si substrate von Momose, H.S., Ohguro, T., Nakamura, S.-I., Toyoshima, Y., Ishiuchi, H., Iwai, H.

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Single-gate 0.15 and 0.12 μm CMOS with Co salicide technology von Yoshitomi, Takashi, Saito, Masanobu, Ohguro, Tatsuya, Ono, Mizuki, Sasaki Momose, Hisayo, Morifuji, Eiji, Morimoto, Toyota, Katsumata, Yasuhiro, Iwai, Hiroshi

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An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs von Jung-Suk Goo, Chang-Hoon Choi, Danneville, F., Morifuji, E., Momose, H.S., Zhiping Yu, Iwai, H., Lee, T.H., Dutton, R.W.

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Oxide semiconductor, semiconductor device, semiconductor memory device, and solid-state imaging device von Momose, Hisayo, Kanrei, Nobuki

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Prospects for low-power, high-speed MPUs using 1.5 nm direct-tunneling gate oxide MOSFETs von Momose, Hisayo Sasaki, Ono, Mizuki, Yoshitomi, Takashi, Ohguro, Tatsuya, Nakamura, Shin-Ichi, Saito, Masanobu, Iwai, Hiroshi

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Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide von Momose, H.S., Nakamura, S.-I., Ohguro, T., Yoshitomi, T., Morifuji, E., Morimoto, T., Katsumata, Y., Iwai, H.

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OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE, AND SOLID-STATE IMAGING DEVICE von MOMOSE Hisayo, KANREI Nobuki

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Dependence of annealing temperature on N-doped InGaZnO thin film properties von NAKANO, SHINTARO, MAEDA, YUYA, OHGURO, TATSUYA, MOMOSE, HISAYO, MOROOKA, TETSU, KANREI, NOBUKI, SUZUKI, KOJI

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Effects of Si channel orientation on MOSFET characteristics von Momose, H.S., Yoshitomi, S.

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SOLID-STATE IMAGING DEVICE von MOMOSE HISAYO

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