High-speed and high-efficiency superconducting nanowire single photon detector array von Rosenberg, D, Kerman, A J, Molnar, R J, Dauler, E A

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III-nitride vertical hot electron transistor with polarization doping and collimated injection von Daulton, J. W., Molnar, R. J., Brinkerhoff, J. A., Hollis, M. A., Zaslavsky, A.

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Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors von Daulton, J. W., Molnar, R. J., Brinkerhoff, J. A., Weir, T. J., Hollis, M. A., Zaslavsky, A.

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Surface recombination and sulfide passivation of GaN von Martinez, G. L., Curiel, M. R., Skromme, B. J., Molnar, R. J.

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Excessive alcohol consumption induces methane production in humans and rats von Tuboly, E., Molnár, R., Tőkés, T., Turányi, R. N., Hartmann, P., Mészáros, A. T., Strifler, G., Földesi, I., Siska, A., Szabó, A., Mohácsi, Á., Szabó, G., Boros, M.

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Orthodox etching of HVPE-grown GaN von Weyher, J.L., Lazar, S., Macht, L., Liliental-Weber, Z., Molnar, R.J., Müller, S., Sivel, V.G.M., Nowak, G., Grzegory, I.

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Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates von Hsu, J. W. P., Manfra, M. J., Molnar, R. J., Heying, B., Speck, J. S.

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Towards a 1010 n/s neutron source with kHz repetition rate, few-cycle laser pulses von Osvay, K., Stuhl, L., Varmazyar, P., Gilinger, T., Elekes, Z., Fenyvesi, A., Hideghethy, K., Szabo, R. E., Füle, M., Biró, B., Halász, Z., Korkulu, Z., Kuti, I., Molnár, R., Ébert, A., Polanek, R., Buzás, E., Nagy, B., Singh, P. K., Hussain, S., Börzsönyi, A., Fülöp, Zs, Tajima, T., Mourou, G., Szabó, G.

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Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements von Look, D. C., Molnar, R. J.

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Bulk GaN crystal growth by the high-pressure ammonothermal method von D’Evelyn, M.P., Hong, H.C., Park, D.-S., Lu, H., Kaminsky, E., Melkote, R.R., Perlin, P., Lesczynski, M., Porowski, S., Molnar, R.J.

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Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes von Hsu, J. W. P., Manfra, M. J., Lang, D. V., Richter, S., Chu, S. N. G., Sergent, A. M., Kleiman, R. N., Pfeiffer, L. N., Molnar, R. J.

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Afterpulsing and instability in superconducting nanowire avalanche photodetectors von Marsili, F., Najafi, F., Dauler, E., Molnar, R. J., Berggren, K. K.

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Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy von Oila, J., Kivioja, J., Ranki, V., Saarinen, K., Look, D. C., Molnar, R. J., Park, S. S., Lee, S. K., Han, J. Y.

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Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy von Spradlin, J., Doǧan, S., Xie, J., Molnar, R., Baski, A. A., Morkoç, H.

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Dislocation density in GaN determined by photoelectrochemical and hot-wet etching von Visconti, P., Jones, K. M., Reshchikov, M. A., Cingolani, R., Morkoç, H., Molnar, R. J.

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Spatial variation in climate mediates gene flow across an island archipelago von Logan, Michael L., Duryea, M. C., Molnar, Orsolya R., Kessler, Benji J., Calsbeek, Ryan

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1200 V GaN-on-silicon Schottky diode von Boles, T., Varmazis, C., Carlson, D., Palacios, T., Turner, G. W., Molnar, R. J.

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Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy von Hsu, J. W. P., Manfra, M. J., Chu, S. N. G., Chen, C. H., Pfeiffer, L. N., Molnar, R. J.

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Identification of Si and O donors in hydride-vapor-phase epitaxial GaN von Moore, W. J., Freitas, J. A., Braga, G. C. B., Molnar, R. J., Lee, S. K., Lee, K. Y., Song, I. J.

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Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN von Look, D.C., Stutz, C.E., Molnar, R.J., Saarinen, K., Liliental-Weber, Z.

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