Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device von KONG WENDELL, XU DONG, CHAO PANEANE, MOHNKERN LEE M, YANG XIAOPING S, SMITH PHILLIP M

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ASYMMETRICALLY RECESSED HIGH-POWER AND HIGH-GAIN ULTRA-SHORT GATE HEMT DEVICE von KONG WENDELL, XU DONG, CHAO PANEANE, MOHNKERN LEE M, YANG XIAOPING S, SMITH PHILLIP M

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Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device von KONG WENDELL, XU DONG, CHAO PANEANE, MOHNKERN LEE M, YANG XIAOPING S, SMITH PHILLIP M

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Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device von KONG WENDELL, XU DONG, CHAO PANEANE, MOHNKERN LEE M, YANG XIAOPING, SMITH PHILLIP M

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ASYMMETRICALLY RECESSED HIGH-POWER AND HIGH-GAIN ULTRA-SHORT GATE HEMT DEVICE von CHAO, PANEANE, XU, DONG, MOHNKERN, LEE, M, SMITH, PHILLIP, M, YANG, XIAOPING, S, KONG, WENDELL

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Method of purifying substrate from unwanted heavy metals von MOHNKERN, LEE M, WILLIAMS, RICHARD J, YANKA, ROBERT W, MEYERS, III, THOMAS H, HARRIS, KARL A, DUDOFF, GREGORY K

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Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications von Dong Xu, Xiaoping Yang, Kong, W M T, Seekell, P, Louie, K, Pleasant, L, Mohnkern, L, Dugas, D M, Kanin Chu, Karimy, H F, Duh, K H G, Smith, P M, Chao, P C

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50-nm Asymmetrically Recessed Metamorphic High-Electron Mobility Transistors With Reduced Source-Drain Spacing: Performance Enhancement and Tradeoffs von Dong Xu, Xiaoping Yang, Seekell, P., Mt. Pleasant, L. M., Mohnkern, Lee, Kanin Chu, Stedman, R. G., Vera, A., Isaak, R., Schlesinger, L. L., Carnevale, R. A., Duh, K. H. G., Smith, P. M., Chao, P. C.

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Development of a low-loss, non-critically phase-matched, 1-μm-pumpable ZGP analog for the mid-infrared von Schunemann, P. G., Mohnkern, L., Vera, A., Yang, X. S., Lin, A. C., Harris, J. S., Tassev, V., Snure, M.

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