Gettering of nickel to cavities in silicon introduced by hydrogen implantation von Mohadjeri, B., Williams, J. S., Wong-Leung, J.

Volltext

Oxidation and roughening of silicon during annealing in a rapid thermal processing chamber von Mohadjeri, B., Baklanov, M. R., Kondoh, E., Maex, K.

Volltext

A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget von Grahn, J. V., Fosshaug, H., Jargelius, M., Jonsson, P., Linder, M., Malm, B. Gunnar, Mohadjeri, B., Pejnefors, J., Radamson, Henry H., Sanden, M., Wang, Yong-Bin, Landgren, Gunnar, Östling, Mikael

Volltext

A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget von Grahn, J.V, Fosshaug, H, Jargelius, M, Jönsson, P, Linder, M, Malm, B.G, Mohadjeri, B, Pejnefors, J, Radamson, H.H, Sandén, M, Wang, Y.-B, Landgren, G, Östling, M

Volltext

Ion-induced amorphization and regrowth of C49 and C54 TiSi2 von MOHADJERI, B, MAEX, K, DONATON, R. A, BENDER, H

Volltext

Growth of High Frequency SiGe Heterojunction Bipolar Transistors Structures von Radamson, H H, Mohadjeri, B, Menon, C, Bentzen, A, Grahn, J, Landgren, G

Volltext

Surface recession and oxidation of silicon during bombardment by low energy oxygen ions von Svensson, B. G., Mohadjeri, B., Petravić, M.

Volltext

Influence of Interface Roughness on Electrical Properties of pMOSFETs with a Si/Si1- xGex Channel von Lindgren, A-C, Hellberg, P-E, Mohadjeri, B, Zhang, S-L, Östling, M

Volltext

SIMS and depth profiling of semiconductor structures von Svensson, B.G., Linnarsson, M.K., Mohadjeri, B., Petravić, M., Williams, J.S.

Volltext

Isotope effects for ion-implantation profiles in silicon von Svensson, B.G., Mohadjeri, B.

Volltext

SHALLOW DEPTH PROFILES OF ARSENIC AND BORON IN COSI2 MEASURED BY SECONDARY ION MASS-SPECTROMETRY von MOHADJERI, B, SVENSSON, BG

Volltext

Nickel-enhanced solid-phase epitaxial regrowth of amorphous silicon von MOHADJERI, B, LINNROS, J, SVENSSON, B. G, ÖSTLING, M

Volltext

Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen-containing... von ERIKSSON, T, CARLSSON, J.-O, MOHADJERI, B, OÊSTLING, M, D'HEURLE, F. M, PETERSSON, C. S, KEINONEN, J

Volltext

Investigations of evaporated silicon p-n junctions and their application to junction field-effect transistors von TIREN, J, GRELSSON, Ö, SOÊDERBAÊRG, A, MAGNUSSON, U, NORDE, H, SVENSSON, B. G, MOHADJERI, B, BERG, S

Volltext

Shallow depth profiles of arsenic and boron in CoSi 2 measured by secondary ion mass spectrometry von Mohadjeri, B., Svensson, B.G.

Volltext

Divacancy acceptor levels in ion-irradiated silicon von SVENSSON, B. G, MOHADJERI, B, HALLEN, A, SVENSSON, J. H, CORBETT, J. W

Volltext

NICKEL-ENHANCED SOLID-PHASE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON von MOHADJERI, B, LINNROS, J, SVENSSON, BG, OSTLING, M

Volltext

Low-complexity 62-GHz f sub(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget von Grahn, J V, Fosshaug, H, Jargelius, M, Jonsson, P, Linder, M, Malm, B G, Mohadjeri, B, Pejnefors, J, Radamson, H H, Sanden, M, Wang, Y-B, Landgren, G, Ostling, M

Volltext

A 0.35 /spl mu/m BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications von Decoutere, S., Kuhn, R., Vleugels, F., Vancuyck, G., Caymax, M., Mohadjeri, B., Deferm, L.

Volltext

A high speed SiGe HBT process using non-selective epitaxy and in situ phosphorus doped polysilicon emitter: Optimization of device design rules von Grahn, J.V., Malm, B.G., Mohadjeri, B., Pejnefors, J., Sanden, M., Wang, Y.-B., Radamson, H.H., Jonsson, P., Jargelius, M., Fosshaug, H., Linder, M., Landgren, G., Ostling, M.

Volltext bestellen