Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions von OLOWOLAFE, J. O, JONES, R. E, CAMPBELL, A. C, HEGDE, R. I, MOGAB, C. J, GREGORY, R. B

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A model for electrical conduction in metal-ferroelectric-metal thin-film capacitors von Sudhama, C., Campbell, A. C., Maniar, P. D., Jones, R. E., Moazzami, R., Mogab, C. J., Lee, J. C.

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Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric, and elevated source/drain extensions von Vandooren, A., Barr, A., Mathew, L., White, T.R., Egley, S., Pham, D., Zavala, M., Samavedam, S., Schaeffer, J., Conner, J., Nguyen, B.-Y., White, B.E., Orlowski, M.K., Mogab, J.

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Interdiffusions in Cu/reactive-ion-sputtered TiN, Cu/chemical-vapor-deposited TiN, Cu/TaN, and TaN/Cu/TaN thin-film structures : low temperature diffusion analyses von OLOWOLAFE, J. O, MOGAB, C. J, GREGORY, R. B, KOTTKE, M

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Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor von GELATOS, A. V, MARSH, R, KOTTKE, M, MOGAB, C. J

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50-nm fully depleted SOI CMOS technology with HfO2 gate dielectric and TiN gate von VANDOOREN, Anne, EGLEY, S, PHAM, Daniel, CONNER, J, PRABHU, L, TRIYOSO, D, SCHAEFFER, J, ROAN, D, NGUYEN, Bich-Yen, ORLOWSKI, M, MOGAB, J, ZAVALA, M, STEPHENS, T, MATHEW, Leo, ROSSOW, M, THEAN, A, BARR, Alex, SHI, Z, WHITE, Ted

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Electrical characteristics of paraelectric lead lanthanum zirconium titanate thin films for dynamic random access memory applications von JONES, R. E, MANIAR, P. D, OLOWOLAFE, J. O, CAMPBELL, A. C, MOGAB, C. J

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Selective chemical vapor deposition of copper using (hfac) copper(I) vinyltrimethylsilane in the absence and presence of water von Jain, A., Gelatos, A.V., Kodas, T.T., Hampden-Smith, M.J., Marsh, R., Mogab, C.J.

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Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics von Mathew, L., Yang Du, Kaipat, S., Sadd, M., Zavala, M., Stephens, T., Mora, R., Rai, R., Becker, S., Parker, C., Sing, D., Shimer, R., Sanez, J., Thean, A.V.Y., Prabhu, L., Moosa, M., Nguyen, B.Y., Mogah, J., Workman, G.O., Vandooren, A., Shi, Z., Chowdhury, M.M., Zhang, W., Fossum, J.G.

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Strain-Enhanced CMOS Through Novel Process-Substrate Stress Hybridization of Super-Critically Thick Strained Silicon Directly on Insulator (SC-SSOI) von Mazure, C., Cayrefourcq, I., Mogab, J., Venkatesan, S., White, B.E., Nguyen, B.-Y., White, T., Burnett, D., La, L.-B., Backer, S., Prabhu, L., Dhandapani, V., Goolsby, B., Wang, X.-D., Goedeke, D., Filipiak, S., Spencer, G., Murphy, S., Shi, Z.-H., Gu, B., Grudowski, P., Desjardin, H., Canonico, M., Conner, J., Adams, V., Vartanian, V., Zhang, D., Thean, A.V.-Y.

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Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas von Mogab, C. J., Adams, A. C., Flamm, D. L.

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Evaluation of Ta, Ti and TiW encapsulations for corrosion and diffusion protection of Cu interconnects von Olowolafe, J.O., Mogab, C.J., Gregory, R.B.

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Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics von Schaeffer, J. K., Samavedam, S. B., Gilmer, D. C., Dhandapani, V., Tobin, P. J., Mogab, J., Nguyen, B.-Y., White, B. E., Dakshina-Murthy, S., Rai, R. S., Jiang, Z.-X., Martin, R., Raymond, M. V., Zavala, M., La, L. B., Smith, J. A., Garcia, R., Roan, D., Kottke, M., Gregory, R. B.

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Metal gates for advanced sub-80-nm SOI CMOS technology von Cheng, B., Maiti, B., Samavedam, S., Grant, J., Taylor, B., Tobin, P., Mogab, J.

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Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration von Tseng, H.-H, Veteran, J, Tobin, P.J, Mogab, J, Tsui, P.G.Y, Wang, V, Khare, M, Wang, X.W, Ma, T.P, Hobbs, C, Hegde, R, Hartig, M, Kenig, G, Blumenthal, R, Cotton, R, Kaushik, V, Tamagawa, T, Halpern, B.L, Cui, G.J, Schmitt, J.J

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CMOS Vertical Multiple Independent Gate Field Effect Transistor (MIGFET) von Mathew, L., Du, Y., Thean, A.V.-Y., Sadd, M., Vandooren, A., Parker, C., Stephens, T., Mora, R., Rai, R., Zavala, M., Sing, D., Kalpat, S., Hughes, J., Shimer, R., Jallepalli, S., Workman, G., Zhang, W., Fossum, J.G., White, B.E., Nguyen, B.-Y., Mogab, J.

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Optical properties of low-pressure chemically vapor deposited silicon over the energy range 3.0–6.0 eV von Bagley, B G, Aspnes, D E, Adams, A C, Mogab, C J

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Measurement of Film Thickness from Lattice Absorption Bands von Mogab, C J

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Backscattering analysis of the composition of silicon-nitride films deposited by rf reactive sputtering von Mogab, C. J., Lugujjo, E.

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The Loading Effect in Plasma Etching von Mogab, C. J.

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