Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions von OLOWOLAFE, J. O, JONES, R. E, CAMPBELL, A. C, HEGDE, R. I, MOGAB, C. J, GREGORY, R. B

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INTERDIFFUSIONS IN CU/REACTIVE-ION-SPUTTERED TIN, CU/CHEMICAL-VAPOR-DEPOSITED TIN, CU/TAN, AND TAN/CU/TAN THIN-FILM STRUCTURES - LOW-TEMPERATURE DIFFUSION ANALYSES von OLOWOLAFE, JO, MOGAB, CJ, GREGORY, RB, KOTTKE, M

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Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor von GELATOS, A. V, MARSH, R, KOTTKE, M, MOGAB, C. J

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A model for electrical conduction in metal-ferroelectric-metal thin-film capacitors von Sudhama, C., Campbell, A. C., Maniar, P. D., Jones, R. E., Moazzami, R., Mogab, C. J., Lee, J. C.

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ELECTRICAL CHARACTERISTICS OF PARAELECTRIC LEAD LANTHANUM ZIRCONIUM TITANATE THIN-FILMS FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATIONS von JONES, RE, MANIAR, PD, OLOWOLAFE, JO, CAMPBELL, AC, MOGAB, CJ

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Selective chemical vapor deposition of copper using (hfac) copper(I) vinyltrimethylsilane in the absence and presence of water von Jain, A., Gelatos, A.V., Kodas, T.T., Hampden-Smith, M.J., Marsh, R., Mogab, C.J.

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Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas von Mogab, C. J., Adams, A. C., Flamm, D. L.

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Evaluation of Ta, Ti and TiW encapsulations for corrosion and diffusion protection of Cu interconnects von Olowolafe, J.O., Mogab, C.J., Gregory, R.B.

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Optical properties of low-pressure chemically vapor deposited silicon over the energy range 3.0–6.0 eV von Bagley, B G, Aspnes, D E, Adams, A C, Mogab, C J

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Conversion of Si to epitaxial SiC by reaction with C2H2 von Mogab, C. J., Leamy, H. J.

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Measurement of Film Thickness from Lattice Absorption Bands von Mogab, C J

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Backscattering analysis of the composition of silicon-nitride films deposited by rf reactive sputtering von Mogab, C. J., Lugujjo, E.

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The Loading Effect in Plasma Etching von Mogab, C. J.

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RIE planarization process for magnetic bubble devices von Gou-Chung Chi, Mogab, C.

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Plasma silicon oxide films on garnet substrates: measurement of their thickness and refractive index by the prism coupling technique von Hou, T W, Mogab, C J

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The effect of reactor configuration on the oxygen plasma conversion of an organosilicon to SiO2 von BAGLEY, B. G, QUINN, W. E, MOGAB, C. J, VASILE, M. J

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Use of Stabilized Zirconia as a Selective Oxygen Leak Source von Mogab, C. J.

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Defect Diffusion in Single Crystal Aluminum Oxide von JONES, T. P., COBLE, R. L., MOGAB, C. J.

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The magnetoresistivity, structure, and magnetic anisotropy of RF sputtered and E-beam evaporated NiFe films von Chi, G. C., Mogab, C. J., Burtherus, A. D., Lehner, A. G.

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High-permittivity lead-based perovskite dielectrics for DRAM applications von Jones, R. E., Maniar, P. D., Campbell, A. C., Moazzami, R., Mogab, C. J.

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