A Novel Aldo-Keto Reductase, HdRed, from the Pacific Abalone Haliotis discus hannai, Which Reduces Alginate-derived 4-Deoxy-l-erythro-5-hexoseulose Uronic Acid to 2-Keto-3-deoxy-d-... von Mochizuki, Shogo, Nishiyama, Ryuji, Inoue, Akira, Ojima, Takao

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Identification of a 4-deoxy-L-erythro-5-hexoseulose uronic acid reductase, FlRed, in an alginolytic bacterium Flavobacterium sp. strain UMI-01 von Inoue, Akira, Nishiyama, Ryuji, Mochizuki, Shogo, Ojima, Takao

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High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction von Cooper, David, Bernier, Nicolas, Rouvière, Jean-Luc, Wang, Yun-Yu, Weng, Weihao, Madan, Anita, Mochizuki, Shogo, Jagannathan, Hemanth

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Quantification of local strain distributions in nanoscale strained SiGe FinFET structures von Mochizuki, Shogo, Murray, Conal E., Madan, Anita, Pinto, Teresa, Wang, Yun-Yu, Li, Juntao, Weng, Weihao, Jagannathan, Hemanth, Imai, Yasuhiko, Kimura, Shigeru, Takeuchi, Shotaro, Sakai, Akira

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Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction von Mochizuki, Shogo, Sakai, Akira, Taoka, Noriyuki, Nakatsuka, Osamu, Takeda, Shingo, Kimura, Shigeru, Ogawa, Masaki, Zaima, Shigeaki

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(Keynote) Group-IV Epitaxy and Process Solutions for Stacked Gate-All-Around Nanosheet Technology Performance Improvement von Mochizuki, Shogo

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Strain relaxation of patterned Ge and SiGe layers on Si(0 0 1) substrates von Mochizuki, Shogo, Sakai, Akira, Nakatsuka, Osamu, Kondo, Hiroki, Yukawa, Katsunori, Izunome, Koji, Senda, Takeshi, Toyoda, Eiji, Ogawa, Masaki, Zaima, Shigeaki

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Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates von Taoka, Noriyuki, Sakai, Akira, Mochizuki, Shogo, Nakatsuka, Osamu, Ogawa, Masaki, Zaima, Shigeaki

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Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices von Mochizuki, Shogo, Loesing, Rainer, Wang, Yun-Yu, Jagannathan, Hemanth

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Analysis of Microstructures in SiGe Buffer Layers on Silicon-on-Insulator Substrates von Taoka, Noriyuki, Sakai, Akira, Mochizuki, Shogo, Nakatsuka, Osamu, Ogawa, Masaki, Zaima, Shigeaki, Tezuka, Tsutomu, Sugiyama, Naoharu, Takagi, Shin-ichi

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Sub- 10^~\Omega -cm2 n-Type Contact Resistivity for FinFET Technology von Niimi, Hiroaki, Zuoguang Liu, Gluschenkov, Oleg, Mochizuki, Shogo, Fronheiser, Jody, Juntao Li, Demarest, James, Chen Zhang, Bei Liu, Jie Yang, Raymond, Mark, Haran, Bala, Huiming Bu, Yamashita, Tenko

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Formation of Si:CP layer through in-situ doping and implantation process for n-type metal–oxide–semiconductor devices von Mochizuki, Shogo, Loesing, Rainer, Zhu, Zhengmao, Domenicucci, Anthony G., Flaitz, Philip L., Li, Jinghong, Paruchuri, Vamsi

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FUNNELED SOURCE/DRAIN INTERFACIAL REGION von Mochizuki, Shogo, Stuckert, Erin

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Sidewall epitaxy encapsulation for nanosheet I/O device von Mochizuki, Shogo, Bao, Ruqiang

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Non-step nanosheet structure for stacked field-effect transistors von Mochizuki, Shogo, Tsutsui, Gen

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STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES von Mochizuki, Shogo, Tsutsui, Gen

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SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE von Mochizuki, Shogo, Bao, Ruqiang

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NON-STEP NANOSHEET STRUCTURE FOR STACKED FIELD-EFFECT TRANSISTORS von TSUTSUI, Gen, MOCHIZUKI, Shogo

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NON-STEP NANOSHEET STRUCTURE FOR STACKED FIELD-EFFECT TRANSISTORS von Mochizuki, Shogo, Tsutsui, Gen

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Sidewall epitaxy encapsulation for nanosheet I/O device von Mochizuki, Shogo, Bao, Ruqiang

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