Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap von Mori, Takahiro, Morita, Yukinori, Miyata, Noriyuki, Migita, Shinji, Fukuda, Koichi, Mizubayashi, Wataru, Masahara, Meishoku, Yasuda, Tetsuji, Ota, Hiroyuki

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Microwave characterization of tantalum superconducting resonators on silicon substrate with niobium buffer layer von Urade, Yoshiro, Yakushiji, Kay, Tsujimoto, Manabu, Yamada, Takahiro, Makise, Kazumasa, Mizubayashi, Wataru, Inomata, Kunihiro

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Flash lamp annealing processing to improve the performance of high-Sn content GeSn n-MOSFETs von Oka, Hiroshi, Mizubayashi, Wataru, Ishikawa, Yuki, Uchida, Noriyuki, Mori, Takahiro, Endo, Kazuhiko

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Performance and reliability improvement in Ge(1 0 0) nMOSFETs through channel flattening process von Chang, Wen-Hsin, Irisawa, Toshifumi, Mizubayashi, Wataru, Ishii, Hiroyuki, Maeda, Tatsuro

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Non-equilibrium solid-phase growth of amorphous GeSn layer on Ge-on-insulator wafer induced by flash lamp annealing von Oka, Hiroshi, Mizubayashi, Wataru, Ishikawa, Yuki, Uchida, Noriyuki, Mori, Takahiro, Endo, Kazuhiko

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Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface von Iwamoto, Kunihiko, Kamimuta, Yuuichi, Ogawa, Arito, Watanabe, Yukimune, Migita, Shinji, Mizubayashi, Wataru, Morita, Yukinori, Takahashi, Masashi, Ota, Hiroyuki, Nabatame, Toshihide, Toriumi, Akira

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Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors von Mizubayashi, Wataru, Noda, Shuichi, Ishikawa, Yuki, Nishi, Takashi, Kikuchi, Akio, Ota, Hiroyuki, Su, Ping-Hsun, Li, Yiming, Samukawa, Seiji, Endo, Kazuhiko

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Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors von Mori, Takahiro, Mizubayashi, Wataru, Morita, Yukinori, Migita, Shinji, Fukuda, Koichi, Miyata, Noriyuki, Yasuda, Tetsuji, Masahara, Meishoku, Ota, Hiroyuki

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High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching von Ohori, Daisuke, Fujii, Takuya, Noda, Shuichi, Mizubayashi, Wataru, Endo, Kazuhiko, Lee, Yao-Jen, Tarng, Jenn-Hwan, Li, Yiming, Samukawa, Seiji

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Accurate evaluation of Ge metal-insulator-semiconductor interface properties von Taoka, Noriyuki, Ikeda, Keiji, Mizubayashi, Wataru, Morita, Yukinori, Migita, Shinji, Ota, Hiroyuki, Takagi, Shinichi

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Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm von Matsukawa, T., Liu, Y., O'uchi, S., Endo, K., Tsukada, J., Yamauchi, H., Ishikawa, Y., Ota, H., Migita, S., Morita, Y., Mizubayashi, W., Sakamoto, K., Masahara, M.

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Simulation study of short-channel effects of tunnel field-effect transistors von Fukuda, Koichi, Asai, Hidehiro, Hattori, Junichi, Mori, Takahiro, Morita, Yukinori, Mizubayashi, Wataru, Masahara, Meishoku, Migita, Shinji, Ota, Hiroyuki, Endo, Kazuhiro, Matsukawa, Takashi

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Fabrication of Direct-Contact Higher-$k$ HfO2 Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing von Morita, Yukinori, Migita, Shinji, Mizubayashi, Wataru, Ota, Hiroyuki

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Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability von Mori, Takahiro, Migita, Shinji, Fukuda, Koichi, Asai, Hidehiro, Morita, Yukinori, Mizubayashi, Wataru, Liu, Yongxun, O uchi, Shin-ichi, Fuketa, Hiroshi, Otsuka, Shintaro, Yasuda, Tetsuji, Masahara, Meishoku, Ota, Hiroyuki, Matsukawa, Takashi

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Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors von Morita, Yukinori, Mori, Takahiro, Migita, Shinji, Mizubayashi, Wataru, Fukuda, Koichi, Matsukawa, Takashi, Endo, Kazuhiko, O’uchi, Shin-ichi, Liu, Yongxun, Masahara, Meishoku, Ota, Hiroyuki

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Extremely Scaled (${\sim}0.2$ nm) Equivalent Oxide Thickness of Higher-$k$ ($k = 40$) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition... von Morita, Yukinori, Migita, Shinji, Mizubayashi, Wataru, Ota, Hiroyuki

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On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors von Fukuda, Koichi, Mori, Takahiro, Asai, Hidehiro, Hattori, Junichi, Mizubayashi, Wataru, Morita, Yukinori, Fuketa, Hiroshi, Migita, Shinji, Ota, Hiroyuki, Masahara, Meishoku, Endo, Kazuhiko, Matsukawa, Takashi

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Bias temperature instability in tunnel field-effect transistors von Mizubayashi, Wataru, Mori, Takahiro, Fukuda, Koichi, Ishikawa, Yuki, Morita, Yukinori, Migita, Shinji, Ota, Hiroyuki, Liu, Yongxun, O uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Matsukawa, Takashi, Masahara, Meishoku, Endo, Kazuhiko

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Two-step annealing effects on ultrathin EOT higher-k (k=40) ALD-HfO2 gate stacks von Morita, Yukinori, Migita, Shinji, Mizubayashi, Wataru, Masahara, Meishoku, Ota, Hiroyuki

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Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model von Morita, Yukinori, Mori, Takahiro, Migita, Shinji, Mizubayashi, Wataru, Tanabe, Akihito, Fukuda, Koichi, Matsukawa, Takashi, Endo, Kazuhiko, O’uchi, Shin-ichi, Liu, Yongxun, Masahara, Meishoku, Ota, Hiroyuki

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