Effects of Cl passivation on Al2O3/GaN interface properties von Nagai, Taisei, Taoka, Noriyuki, Ohta, Akio, Makihara, Katsunori, Miyazaki, Seiichi

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Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure von Matsushita, Keigo, Ohta, Akio, Shibayama, Shigehisa, Tokunaga, Tomoharu, Taoka, Noriyuki, Makihara, Katsunori, Miyazaki, Seiichi

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Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure von Matsushita, Keigo, Ohta, Akio, Taoka, Noriyuki, Hayashi, Shohei, Makihara, Katsunori, Miyazaki, Seiichi

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Complex dielectric function of Si oxide as evaluated from photoemission measurements von Ohta, Akio, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi

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Characterization of high-k gate dielectric/silicon interfaces von Miyazaki, Seiichi

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Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal von Ohta, Akio, Yamada, Kenzo, Sugawa, Hibiki, Taoka, Noriyuki, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi

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Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots von WU, Jialin, MAKIHARA, Katsunori, ZHANG, Hai, TAOKA, Noriyuki, OHTA, Akio, MIYAZAKI, Seiichi

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Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface von Ohta, Akio, Truyen, Nguyen Xuan, Fujimura, Nobuyuki, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi

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Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface von Kobayashi, Masato, Ohta, Akio, Kurosawa, Masashi, Araidai, Masaaki, Taoka, Noriyuki, Simizu, Tomohiro, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi

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Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection von Makihara, Katsunori, Ikeda, Mitsuhisa, Fujimura, Nobuyuki, Yamada, Kentaro, Ohta, Akio, Miyazaki, Seiichi

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Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots von Honda, Shunsuke, Makihara, Katsunori, Taoka, Noriyuki, Furuhata, Hiroshi, Ohta, Akio, Oshima, Daiki, Kato, Takeshi, Miyazaki, Seiichi

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Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy von Ohta, Akio, Makihara, Katsunori, Miyazaki, Seiichi

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Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient von Ito, Koichi, Ohta, Akio, Kurosawa, Masashi, Araidai, Masaaki, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi

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Study on electroluminescence from multiply-stacking valency controlled Si quantum dots von Yamada, Takahisa, Makihara, Katsunori, Ohta, Akio, Ikeda, Mitsuhisa, Miyazaki, Seiichi

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Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy von Futamura, Yuto, Nakashima, Yuta, Ohta, Akio, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi

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Impact of embedded Mn nanodots on resistive switching characteristics of Si-rich oxides as measured in Ni-electrode metal-insulator-metal diodes von Arai, Takashi, Ohta, Akio, Makihara, Katsunori, Miyazaki, Seiichi

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Electron and hole components of tunneling currents through an interfacial oxide-high- k gate stack in metal-oxide-semiconductor capacitors von Noor, Fatimah A., Abdullah, Mikrajuddin, Sukirno, Khairurrijal, Ohta, Akio, Miyazaki, Seiichi

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Proceedings of the 24th International Conference on Amorphous and Nanocrystalline Semiconductors Nara, Japan, August 21–26, 2011 von MIYAZAKI, Seiichi, TANAKA, Keiji, HOSONO, Hideo, FUJIWARA, Hiroyuki, HIGASHI, Seiichiro

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Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe von Wu, Jialin, Zhang, Hai, Furuhata, Hiroshi, Makihara, Katsunori, Ikeda, Mitsuhisa, Ohta, Akio, Miyazaki, Seiichi

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Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors von KATO, Yusuke, OHTA, Akio, IKEDA, Mitsuhisa, MAKIHARA, Katsunori, MIYAZAKI, Seiichi

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