Measurement of Ionization Energies of Nitrogen in 4H-SiC by Traveling-Wave Method von Takase, Tsuyoshi, Sakaino, Masamichi, Sun, Yong, Miyasato, Tatsuro

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Infrared Absorption Properties of Nanocrystalline Cubic SiC Films von Yong Sun, Yong Sun, Tatsuro Miyasato, Tatsuro Miyasato

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Characterization of excess carbon in cubic SiC films by infrared absorption von Sun, Yong, Miyasato, Tatsuro, Wigmore, J. Keith

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Metallic-nonmetallic transition on the conductivity temperature dependence of multiwall carbon nanotubes von Sun, Yong, Miyasato, Tatsuro, Kirimoto, Kenta, Kusunoki, Michiko

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Stress Release Behaviors of Amorphous SiC/Si Structure during Annealing von Yong Sun, Yong Sun, Kyoichiro Nakatsugi, Kyoichiro Nakatsugi, Tatsuro Miyasato, Tatsuro Miyasato

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Epitaxial Growth of Cubic SiC Film on Si Crystal with Curved Surface von Sun, Yong, Miyasato, Tatsuro

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Activation Energy of Nanoscale 3C-SiC Island Growth on Si Substrate von Yong Sun, Yong Sun, Tokihiro Ayabe, Tokihiro Ayabe, Tatsuro Miyasato, Tatsuro Miyasato

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Characterization of 3C-SiC films grown on monocrystalline Si by reactive hydrogen plasma sputtering von Sun, Yong, Miyasato, Tatsuro, Wigmore, J. Keith, Sonoda, Nobuo, Watari, Yoshihiko

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Plasma Etch Void Formed at the SiC Film/Si Substrate Interface von Yong Sun, Yong Sun, Tatsuro Miyasato, Tatsuro Miyasato

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An Abnormal Temperature Dependence of Conductivity in Fullerene Solids von Sun, Yong, Onwona-Agyeman, Boateng, Miyasato, Tatsuro

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Controlling the resistivity of multi-walled carbon nanotube networks by copper encapsulation von Sun, Yong, Onwona-Agyeman, Boateng, Miyasato, Tatsuro

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Compositional Changes of SiC/Si Structure during Vacuum Annealing von Yong Sun, Yong Sun, Nobuo Sonoda, Nobuo Sonoda, Tatsuro Miyasato, Tatsuro Miyasato

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Three-dimensional quantum well effects in ultrafine silicon particles von FURUKAWA, S, MIYASATO, T

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Fabrication of Nanoscale Cubic SiC Particle Film von Yong Sun, Yong Sun, Kenta Kirimoto, Kenta Kirimoto, Tatsuro Miyasato, Tatsuro Miyasato

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Void free at Interface of the SiC Film and Si Substrate von Sun, Yong, Miyasato, Tatsuro, Masuda, Koichiro, Enokida, Toyotsugu, Hagino, Hiroyasu

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Improvement of Annealing Properties of SiC/Si Structure von Yong Sun, Yong Sun, Tatsuro Miyasato, Tatsuro Miyasato

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Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering von Yong Sun, Yong Sun, Tokihiro Ayabe, Tokihiro Ayabe, Tatsuro Miyasato, Tatsuro Miyasato

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Growth of 3C-SiC on Si Substrate with Ge 1-0.63 C 0.63 Buffer Layer von Yong Sun, Yong Sun, Tatsuro Miyasato, Tatsuro Miyasato

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Loss behaviors of Si substrate during growth of the SiC films prepared by hydrogen plasma sputtering von SUN, Y, MIYASATO, T

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