Correction: Issues in the Adoption of Online Medical Care: Cross-Sectional Questionnaire Survey von Sugawara, Yuka, Hirakawa, Yosuke, Iwagami, Masao, Kuroki, Haruo, Mitani, Shuhei, Inagaki, Ataru, Ohashi, Hiroki, Kubota, Mitsuru, Koike, Soichi, Wakimizu, Rie, Nangaku, Masaomi

Volltext

Issues in the Adoption of Online Medical Care: Cross-Sectional Questionnaire Survey von Sugawara, Yuka, Hirakawa, Yosuke, Iwagami, Masao, Kuroki, Haruo, Mitani, Shuhei, Inagaki, Ataru, Ohashi, Hiroki, Kubota, Mitsuru, Koike, Soichi, Wakimizu, Rie, Nangaku, Masaomi

Volltext

Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001) von Hosoi, Takuji, Kirino, Takashi, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Shimura, Takayoshi, Watanabe, Heiji

Volltext

Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates von Shimura, Takayoshi, Konzono, Kohei, Nakano, Yuki, Hosoi, Takuji, Nakamura, Takashi, Uenishi, Yusuke, Mitani, Shuhei, Watanabe, Heiji

Volltext

Dielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) Substrates von Shimura, Takayoshi, Nakano, Yuki, Hosoi, Takuji, Nakamura, Takashi, Uenishi, Yusuke, Mitani, Shuhei, Watanabe, Heiji

Volltext

Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer von Kirino, Takashi, Shimura, Takayoshi, Nakano, Yuki, Nakamura, Takashi, Hosoi, Takuji, Kagei, Yusuke, Mitani, Shuhei, Watanabe, Heiji, Teraoka, Yuden, Harries, James, Yoshigoe, Akitaka

Volltext

Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices von Kirino, Takashi, Shimura, Takayoshi, Nakano, Yuki, Nakamura, Takashi, Hosoi, Takuji, Mitani, Shuhei, Ikeguchi, Daisuke, Watanabe, Heiji

Volltext

High prolactin concentration during lactation period induced disorders of maternal behavioral in offspring von Mitani, Shuhei, Amano, Izuki, Takatsuru, Yusuke

Volltext

Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface von Kirino, Takashi, Shimura, Takayoshi, Nakano, Yuki, Chanthaphan, Atthawut, Hosoi, Takuji, Nakamura, Takashi, Uenishi, Yusuke, Mitani, Shuhei, Ikeguchi, Daisuke, Teraoka, Yuden, Watanabe, Heiji, Yoshigoe, Akitaka

Volltext

Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices von Kirino, Takashi, Shimura, Takayoshi, Nakano, Yuki, Hosoi, Takuji, Nakamura, Takashi, Kagei, Yusuke, Mitani, Shuhei, Watanabe, Heiji

Volltext

AlON/SiO2 Stacked Gate Dielectrics for 4H-SiC MIS Devices von Harada, Makoto, Shimura, Takayoshi, Nakano, Yuki, Watanabe, Yuu, Hosoi, Takuji, Nakamura, Takashi, Kagei, Yusuke, Mitani, Shuhei, Watanabe, Heiji

Volltext

Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy von Kirino, Takashi, Shimura, Takayoshi, Kozono, Kohei, Nakano, Yuki, Hosoi, Takuji, Nakamura, Takashi, Kagei, Yusuke, Mitani, Shuhei, Watanabe, Heiji

Volltext

4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology von Ebihara, Yasuhiro, Noborio, Masato, Ichimura, Aiko, Mitani, Shuhei, Mizuno, Shoji, Yamamoto, Toshimasa, Takeuchi, Yuichi, Tsuruta, Kazuhiro

Volltext

Investigation of unusual mobile ion effects in thermally grown SiO 2 on 4H-SiC(0001) at high temperatures von Chanthaphan, Atthawut, Hosoi, Takuji, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Shimura, Takayoshi, Watanabe, Heiji

Volltext

Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO2/SiC Interfaces von Harada, Makoto, Kirino, Takashi, Shimura, Takayoshi, Nakano, Yuki, Watanabe, Yuu, Hosoi, Takuji, Nakamura, Takashi, Kagei, Yusuke, Mitani, Shuhei, Watanabe, Heiji

Volltext

(Invited) Gate Stack Technologies for SiC Power MOSFETs von Watanabe, Heiji, Hosoi, Takuji, Kirino, Takashi, Uenishi, Yusuke, Chanthaphan, Atthawut, Ikeguchi, Daisuke, Yoshigoe, Akitaka, Teraoka, Yuden, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Shimura, Takayoshi

Volltext

Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing von Kirino, Takashi, Shimura, Takayoshi, Nakano, Yuki, Nakamura, Takashi, Hosoi, Takuji, Mitani, Shuhei, Watanabe, Heiji, Ikeguchi, Daisuke

Volltext

690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs von Sakairi, H., Mitani, Shuhei, Nakano, Yuki, Nakamura, R., Nakamura, T.

Volltext

Dielectric Properties of Thermally Grown SiO sub(2) on 4H-SiC(0001) Substrates von Hosoi, Takuji, Uenishi, Yusuke, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Shimura, Takayoshi, Watanabe, Heiji

Volltext

Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics von Kirino, Takashi, Kozono, Kohei, Nakano, Yuki, Watanabe, Yuu, Hosoi, Takuji, Nakamura, Takashi, Kagei, Yusuke, Mitani, Shuhei, Watanabe, Heiji

Volltext