Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs von Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Yamada, Atsushi, Makiyama, Kozo, Kotani, Junji, Ozaki, Shiro, Sato, Masaru, Nakamura, Norikazu

Volltext

High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers von Kotani, Junji, Makiyama, Kozo, Ohki, Toshihiro, Ozaki, Shiro, Okamoto, Naoya, Minoura, Yuichi, Sato, Masaru, Nakamura, Norikazu, Miyamoto, Yasuyuki

Volltext

First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm −1 output power density von Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Kumazaki, Yusuke, Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Nakamura, Norikazu, Kotani, Junji

Volltext

Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates von Kumazaki, Yusuke, Ohki, Toshihiro, Kotani, Junji, Ozaki, Shiro, Niida, Yoshitaka, Minoura, Yuichi, Nishimori, Masato, Okamoto, Naoya, Sato, Masaru, Nakamura, Norikazu, Watanabe, Keiji

Volltext

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader von Ohki, Toshihiro, Yamada, Atsushi, Minoura, Yuichi, Makiyama, Kozo, Kotani, Junji, Ozaki, Shiro, Sato, Masaru, Okamoto, Naoya, Joshin, Kazukiyo, Nakamura, Norikazu

Volltext

31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation von Yamada, Atsushi, Minoura, Yuichi, Kurahashi, Naoko, Kamada, Yoichi, Ohki, Toshihiro, Sato, Masaru, Nakamura, Norikazu

Volltext

31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiN x Passivation von Yamada, Atsushi, Minoura, Yuichi, Kurahashi, Naoko, Kamada, Yoichi, Ohki, Toshihiro, Sato, Masaru, Nakamura, Norikazu

Volltext

Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment von Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Nakamura, Norikazu, Kotani, Junji

Volltext

Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al 2 O 3 ‐Based Insulated‐Gate Structures with H 2 O Vapor Pretreatment von Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Nakamura, Norikazu, Kotani, Junji

Volltext

GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process von Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Sato, Masaru, Ozaki, Shiro, Yamada, Atsushi, Kotani, Junji

Volltext

Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma von Okamoto, Naoya, Takahashi, Atsushi, Minoura, Yuichi, Kumazaki, Yusuke, Ozaki, Shiro, Ohki, Toshihiro, Hara, Naoki, Watanabe, Keiji

Volltext

Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs von Kamada, Yoichi, Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Ohki, Toshihiro, Minoura, Yuichi, Kumazaki, Yusuke, Okamoto, Naoya, Makiyama, Kozo, Nakamura, Norikazu, Kotani, Junji

Volltext

Thermally stable and low trap density SiN x /AlON bi-layer structure for AlGaN/GaN MIS-HEMTs von Kamada, Yoichi, Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Ohki, Toshihiro, Minoura, Yuichi, Kumazaki, Yusuke, Okamoto, Naoya, Makiyama, Kozo, Nakamura, Norikazu, Kotani, Junji

Volltext

GaN Through-substrate Via Process for GaN-on-GaN HEMTs using High-rate ICP Etching von Okamoto, Naoya, Takahashi, Atsushi, Minoura, Yuichi, Kumazaki, Yusuke, Ozaki, Shiro, Ohki, Toshihiro

Volltext

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE von MINOURA YUICHI

Volltext bestellen

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC EQUIPMENT von MINOURA YUICHI

Volltext bestellen

Compound semiconductor device and method with high concentration dopant layer in regrown compound semiconductor von Minoura, Yuichi, Makiyama, Kozo

Volltext bestellen

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS von MINOURA YUICHI

Volltext bestellen

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE von MINOURA, Yuichi, YAMADA, Atsushi, KUMAZAKI, Yusuke

Volltext bestellen

Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier von MINOURA YUICHI

Volltext bestellen