Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy von Minj, A, Cros, A, Garro, N, Colchero, J, Auzelle, T, Daudin, B

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Photoinduced Persistent Electron Accumulation and Depletion in LaAlO3/SrTiO3 Quantum Wells von Chen, Yu, Lechaux, Yoann, Casals, Blai, Guillet, Bruno, Minj, Albert, Gázquez, Jaume, Méchin, Laurence, Herranz, Gervasi

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Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures von Minj, A., Romero, M. F., Wang, Y., Tuna, Ö., Feneberg, M., Goldhahn, R., Schmerber, G., Ruterana, P., Giesen, C., Heuken, M.

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Indium segregation in AlInN/AlN/GaN heterostructures von Minj, A., Cavalcoli, D., Cavallini, A.

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Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD von Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M. P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., Kuzmík, J.

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Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy von Lechaux, Y, Minj, A, Méchin, L, Liang, H, Geens, K, Zhao, M, Simoen, E, Guillet, B

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Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure von Ben Ammar, H., Minj, A., Gamarra, P., Lacam, C., Tordjman, M., di Forte‐Poisson, M. A., Morales, M., Chauvat, M. P., Ruterana, P.

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Interface dislocations in InxGa1–xN/GaN heterostructures von Li, Q. T., Minj, A., Chauvat, M. P., Chen, J., Ruterana, P.

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The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template von BEN AMMAR, H., MINJ, A., CHAUVAT, M.‐P., GAMARRA, P., LACAM, C., MORALES, M., RUTERANA, P.

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Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures von Minj, A, Cavalcoli, D, Cavallini, A

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Structural and local electrical properties of AlInN/AlN/GaN heterostructures von Minj, A., Cavalcoli, D., Cavallini, A.

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Electronic transitions and fermi edge singularity in polar heterostructures studied by absorption and emission spectroscopy von Pandey, S., Cavalcoli, D., Minj, A., Fraboni, B., Cavallini, A., Gamarra, P., Poisson, M. A.

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Electrical properties of dislocations in III-Nitrides von Cavalcoli, D, Minj, A, Pandey, S, Cavallini, A

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Dairy Processing: Advanced Research to Applications von Minj, Jagrani, V, Aparna Sudhakaran, Kumari, Anuradha

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Immunohistochemical identification of interstitial cells of cajal (ICCs) in prenatal bovine intestine von KUMAR, SANJAY, DAS, PARTHA, RANJAN, RAJESH, MINJ, A P

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Defect investigation in Al0.87In0.13N/AlN/GaN heterostructures by scanning force microscopy methods von Minj, A, Cavalcoli, D, Cavallini, A

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Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells von Minj, A, Zhao, M, Bakeroot, Benoit, Paredis, K

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Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage von Cavalcoli, D, Minj, A, Fazio, M.A, Cros, A, Heuken, M

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Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells von Minj, A., Zhao, M., Bakeroot, B., Paredis, K.

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Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS 2 monolayers on sapphire substrates von Rybalchenko, Y., Minj, A., Medina, H., Villarreal, R., Groven, B., Lin, D., Pereira, L.M.C., Morin, P., Hantschel, T., Afanas’ev, V.V.

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