Immunohistochemical identification of interstitial cells of cajal (ICCs) in prenatal bovine intestine von KUMAR, SANJAY, DAS, PARTHA, RANJAN, RAJESH, MINJ, A P

Volltext

Patterns of calcium channel (TRPV6) expression in rabbit gut epithelium von Ranjan, Rajesh, Das, Partha, Batabyal, Subhashish, Minj, Arpana Priyanka

Volltext

Comparative transmission electron microscopic studies on eosinophil of non ruminants von Mehta, S, Minj, A.P

Volltext

ANATOMICAL DISPOSITION OF CARPAL BONES OF GOLDEN RETRIEVER DOG BY X-RAY EXPOSURE von R. Mandal, S. Ray, A.P. Minj, S. Podder, S.K. Mukhopadhayay, S. Ganguly

Volltext

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures von Minj, A., Romero, M. F., Wang, Y., Tuna, Ö., Feneberg, M., Goldhahn, R., Schmerber, G., Ruterana, P., Giesen, C., Heuken, M.

Volltext

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template von BEN AMMAR, H., MINJ, A., CHAUVAT, M.‐P., GAMARRA, P., LACAM, C., MORALES, M., RUTERANA, P.

Volltext

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD von Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M. P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., Kuzmík, J.

Volltext

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure von Ben Ammar, H., Minj, A., Gamarra, P., Lacam, C., Tordjman, M., di Forte‐Poisson, M. A., Morales, M., Chauvat, M. P., Ruterana, P.

Volltext

Interface dislocations in InxGa1–xN/GaN heterostructures von Li, Q. T., Minj, A., Chauvat, M. P., Chen, J., Ruterana, P.

Volltext

Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS 2 monolayers on sapphire substrates von Rybalchenko, Y., Minj, A., Medina, H., Villarreal, R., Groven, B., Lin, D., Pereira, L.M.C., Morin, P., Hantschel, T., Afanas’ev, V.V.

Volltext

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer von Chauhan, Prerna, Hasenöhrl, S., Minj, A., Chauvat, M.P., Ruterana, P., Kuzmík, J.

Volltext

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer von Chauhan, Prerna, Hasenohrl, S, Minj, A, Chauvat, M.P, Ruterana, P, Kuzmik, J

Volltext

Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substrates von Rybalchenko, Y., Minj, A., Medina, H., Villarreal, R., Groven, B., Lin, D., Pereira, L.M.C., Morin, P., Hantschel, T., Afanas’ev, V.V.

Volltext

Treatment of LF slag to prevent powdering during cooling von Ghorai, S., Mandal, G.K., Roy, S., Minj, R.K., Agarwal, A., Singh, D.P., Kumar, A., Ramna, R.B.V.

Volltext

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD von Chauhan, P, Hasenohrl, S, Dobrocka, E, Chauvat, M.P, Minj, A, Gucmann, F, Vanco, L, Kovac, J, Kret, S, Ruterana, P, Kuball, M, Siffalovic, P, Kuzmik, J

Volltext

Interface dislocations in In x Ga 1- x N/GaN heterostructures: Interface dislocations in In x Ga 1- x N/GaN von Li, Q. T., Minj, A., Chauvat, M. P., Chen, J., Ruterana, P.

Volltext

Interface dislocations in In sub(x)Ga sub(1-x)N/GaN heterostructures von Li, Q T, Minj, A, Chauvat, M P, Chen, J, Ruterana, P

Volltext

Interface dislocations in In x Ga 1- x N/GaN heterostructures von Belabbas, I., Nouet, G., Li, Q., Minj, A., Chauvat, M-P, Chen, J., Ruterana, P.

Volltext

Interface dislocations in InxGa1–xN/GaN heterostructures von Li, Q.T., Minj, A., Chauvat, M-P, Chen, Jun, P., Ruterana

Volltext

Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis von Minj, Albert, Cavalcoli, Daniela, Cavallini, Anna, Gamarra, Piero, di Forte Poisson, Marie-Antoinette

Volltext