Treffer 1 - 9 von 9 für Suche 'MILOSHEVSKIJ V.A', Suchdauer: 0,33s Treffer weiter einschränken
  1. 1
    MEMORY ELEMENT

    MEMORY ELEMENT von MILOSHEVSKIJ V.A, MALTSEV A.I, NAGIN A.P, TYULKIN V.M

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  2. 2
    MATRIX MEMORY STORAGE MADE IN MOSFET WITH VARIABLE THRESHOLD

    MATRIX MEMORY STORAGE MADE IN MOSFET WITH VARIABLE THRESHOLD von MILOSHEVSKIJ V.A, MALTSEV A.I, NAGIN A.P, CHERNYSHEV YU.R, TYULKIN V.M

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  3. 3
    MEMORY GATE

    MEMORY GATE von MILOSHEVSKIJ V.A, MALTSEV A.I, NAGIN A.P, TYULKIN V.M

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  4. 4
    METHOD FOR RECOVERY OF REPROGRAMMING MEMORY DEVICES

    METHOD FOR RECOVERY OF REPROGRAMMING MEMORY DEVICES von MILOSHEVSKIJ V.A, MALTSEV A.I, NAGIN A.P, TYULKIN V.M

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  5. 5
    MEMORY CELL

    MEMORY CELL von MILOSHEVSKIJ V.A, MALTSEV A.I, NAGIN A.P, CHERNYSHEV YU.R, TRAILIN V.I, TYULKIN V.M

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  6. 6
    METHOD OF DECREASING DEFECTIVENESS OF DOUBLE-LAYER DIELECTRIC IN CONDUCTOR-SILICON NITRIDE-SILICON OXIDE- SEMICONDUCTOR STRUCTURE

    METHOD OF DECREASING DEFECTIVENESS OF DOUBLE-LAYER DIELECTRIC IN CONDUCTOR-SILICON NITRIDE-SILICON OXIDE- SEMICONDUCTOR STRUCTURE von Mal'tsev A.I, Chernyshev Ju.R, Miloshevskij V.A, Tjul'kin V.M, Nagin A.P

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  7. 7
    METHOD OF MEASURING VOLTAGE OF PROGRAMMING OF MEMORY CELL ON THE BASE OF SEMICONDUCTOR- SILICON NITRIDE-SILICON OXYDE-SEMICONDUCTOR (SNOS) STRUCTURE

    METHOD OF MEASURING VOLTAGE OF PROGRAMMING OF MEMORY CELL ON THE BASE OF SEMICONDUCTOR- SILICON NITRIDE-SILICON OXYDE-SEMICONDUCTOR (SNOS) STRUCTURE von MILOSHEVSKIJ V.A, MALTSEV A.I, NAGIN A.P, TYULKIN V.M

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  8. 8
    INSULATED-GATE FIELD-EFFECT TRANSISTOR

    INSULATED-GATE FIELD-EFFECT TRANSISTOR von MILOSHEVSKIJ V.A, MAL'TSEV A.I, NAGIN A.P, TJUL'KIN V.M

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  9. 9
    METHOD FOR INFORMATION RECOVERY IN MEMORY GATE

    METHOD FOR INFORMATION RECOVERY IN MEMORY GATE von MILOSHEVSKIJ V.A, MAL'TSEV A.I, SHUKATKO G.M, NAGIN A.P, TJUL'KIN V.M

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