Deep Learning-Based ASM-HEMT I-V Parameter Extraction von Chavez, Fredo, Davis, Devin T., Miller, Nicholas C., Khandelwal, Sourabh

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An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications von Miller, Nicholas C., Brown, Alexis, Elliott, Michael, Gilbert, Ryan, Davis, Devin T., Islam, Ahmad E., Walker, Dennis, Hughes, Gary, Liddy, Kyle, Chabak, Kelson D.

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A W-Band GaN MMIC Single-Chip T/R Front End von Sonnenberg, Timothy, Romano, Anthony, Miller, Nicholas C., Popovic, Zoya

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N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz von Arias-Purdue, Andrea, Rowell, Petra V., King, Casey M., Carter, Andrew D., Paniagua, Andres, Shinohara, Keisuke, Bergman, Josh, Urteaga, Miguel E., Miller, Nicholas C., Elliott, Michael, Gilbert, Ryan, Herrault, Florian, Green, Daniel, Buckwalter, James F.

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Isothermal Characterization of Traps in GaN HEMTs Operating in Class B Using a Real-Time Pulsed-RF NVNA Testbed von Lindquist, Miles, Roblin, Patrick, Mikrut, Dominic, Nichols, Matthew J., Miller, Nicholas C.

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A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs von Tunga, Ashwin, Li, Kexin, White, Ethan, Miller, Nicholas C., Grupen, Matt, Albrecht, John D., Rakheja, Shaloo

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RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band von Green, Andrew J., Moser, Neil, Miller, Nicholas C., Liddy, Kyle J., Lindquist, Miles, Elliot, Michael, Gillespie, James K., Fitch, Robert C., Gilbert, Ryan, Walker, Dennis E., Werner, Elizabeth, Crespo, Antonio, Beam, Edward, Xie, Andy, Lee, Cathy, Cao, Yu, Chabak, Kelson D.

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length von Islam, Ahmad E., Sepelak, Nicholas P., Miesle, Adam T., Lee, Hanwool, Snure, Michael, Nikodemski, Stefan, Walker, Dennis E., Miller, Nicholas C., Grupen, Matt, Leedy, Kevin D., Liddy, Kyle J., Crespo, Antonio, Hughes, Gary R., Zhu, Wenjuan, Poling, Brian, Tetlak, Stephen, Chabak, Kelson D., Green, Andrew J.

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Lateral β-Ga2O3 field effect transistors von Chabak, Kelson D, Leedy, Kevin D, Green, Andrew J, Mou, Shin, Neal, Adam T, Asel, Thaddeus, Heller, Eric R, Hendricks, Nolan S, Liddy, Kyle, Crespo, Antonio, Miller, Nicholas C, Lindquist, Miles T, Moser, Neil A, Fitch, Robert C, Walker, Dennis E, Dorsey, Donald L, Jessen, Gregg H

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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band von Moser, Neil A., Asel, Tadj, Liddy, Kyle J., Lindquist, Miles, Miller, Nicholas C., Mou, Shin, Neal, Adam, Walker, Dennis E., Tetlak, Steve, Leedy, Kevin D., Jessen, Gregg H., Green, Andrew J., Chabak, Kelson D.

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Self-Heating Characterization of \beta -Ga2O3 Thin-Channel MOSFETs by Pulsed - and Raman Nanothermography von Blumenschein, Nicholas A., Moule, Taylor, Dalcanale, Stefano, Mercado, Elisha, Singh, Manikant, Pomeroy, James W., Kuball, Martin, Wagner, Gunter, Paskova, Tania, Muth, John F., Chabak, Kelson D., Moser, Neil A., Jessen, Gregg H., Heller, Eric R., Miller, Nicholas C., Green, Andrew J., Popp, Andreas, Crespo, Antonio, Leedy, Kevin, Lindquist, Miles

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Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport von Miller, Nicholas C., Grupen, Matt, Islam, Ahmad E., Albrecht, John D., Frey, Dave, Young, Richard, Lindquist, Miles, Green, Andrew J., Walker, Dennis E., Chabak, Kelson D.

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Improving the Precision of On-Wafer W-Band Scalar Load-Pull Measurements von Miller, Nicholas C., Elliott, Michael, Lam, Eythan, Gilbert, Ryan, Uyeda, Jansen, Coffie, Robert L.

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Computational study of Fermi kinetics transport applied to large-signal RF device simulations von Miller, Nicholas C., Grupen, Matt, Beckwith, Kris, Smithe, David, Albrecht, John D.

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A Discontinuous Galerkin Time Domain Framework for Periodic Structures Subject to Oblique Excitation von Miller, Nicholas C., Baczewski, Andrew D., Albrecht, John D., Shanker, Balasubramaniam

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A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications von Miller, Nicholas C., Arias-Purdue, Andrea, Arkun, Erdem, Brown, David, Buckwalter, James F., Coffie, Robert L., Corrion, Andrea, Denninghoff, Daniel J., Elliott, Michael, Fanning, Dave, Gilbert, Ryan, Green, Daniel S., Herrault, Florian, Heying, Ben, King, Casey M., Lam, Eythan, Moon, Jeong-Sun, Rowell, Petra V., Siddiqi, Georges, Smorchkova, Ioulia, Tai, Joe, Uyeda, Jansen, Wojtowicz, Mike

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Rapid analysis of scattering from periodic dielectric structures using accelerated Cartesian expansions von BACZEWSKI, Andrew D, MILLER, Nicholas C, SHAKER, Balasubramaniam

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Next Generation Pharmaceutical Impactor (A new Impactor for Pharmaceutical inhaler testing). Part I: Design von MARPLE, Virgil A, ROBERTS, Daryl L, ROMAY, Francisco J, MILLER, Nicholas C, TRUMAN, Keith G, VAN OORT, Michiel, OLSSON, Bo, HOLROYD, Michael J, MITCHELL, Jolyon P, HOCHRAINER, Dieter

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With $\sim$140-nm Gate Length von Islam, Ahmad E., Sepelak, Nicholas P., Miesle, Adam T., Lee, Hanwool, Snure, Michael, Nikodemski, Stefan, Walker, Dennis E., Miller, Nicholas C., Grupen, Matt, Leedy, Kevin D., Liddy, Kyle J., Crespo, Antonio, Hughes, Gary R., Zhu, Wenjuan, Poling, Brian, Tetlak, Stephen, Chabak, Kelson D., Green, Andrew J.

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W -Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz von Moon, Jeong-Sun, Grabar, Bob, Wong, Joel, Dao, Chuong, Arkun, Erdem, Tai, Haw, Fanning, Dave, Miller, Nicholas C., Elliott, Michael, Gilbert, Ryan, Venkatesan, Nivedhita, Fay, Patrick

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