Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET von Niskanen, K., Touboul, A. D., Germanicus, R. Coq, Michez, A., Javanainen, A., Wrobel, F., Boch, J., Pouget, V., Saigne, F.

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South Atlantic Anomaly Evolution Seen by the Proton Flux von Ginisty, F., Wrobel, F., Ecoffet, R., Mandea, M., Michez, A., Balcon, N., Ruffenach, M., Mekki, J.

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Forest cover correlates with good biological water quality. Insights from a regional study (Wallonia, Belgium) von Brogna, D., Dufrêne, M., Michez, A., Latli, A., Jacobs, S., Vincke, C., Dendoncker, N.

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Magnetic anisotropy and magnetic domain structure in C-doped Mn5Ge3 von Michez, L.-A., Virot, F., Petit, M., Hayn, R., Notin, L., Fruchart, O., Heresanu, V., Jamet, M., Le Thanh, V.

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Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment von Niskanen, K., Coq Germanicus, R., Michez, A., Wrobel, F., Boch, J., Saigne, F., Touboul, A. D.

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Total Ionizing Dose Effect in LDMOS Oxides and Devices von Borel, T., Furic, S., Leduc, E., Michez, A., Boch, J., Touboul, A., Azais, B., Danzeca, S., Dusseau, L.

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Atypical Effect of Displacement Damage on LM124 Bipolar Integrated Circuits von Borel, T., Roig, F., Michez, A., Azais, B., Danzeca, S., Roche, N. J.-H., Bezerra, F., Calvel, P., Dusseau, L.

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Epitaxial growth and magnetic properties of Mn5Ge3 Ge and Mn5Ge3Cx Ge heterostructures for spintronic applications von Thanh, Vinh Le, Spiesser, Aurélie, Dau, Minh-Tuan, F Olive-Mendez, Sion, A Michez, Lisa, Petit, Matthieu

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Dose Rate Switching Technique on ELDRS-Free Bipolar Devices von Boch, J., Michez, A., Rousselet, M., Dhombres, S., Touboul, A. D., Vaille, J-R, Dusseau, L., Lorfevre, E., Chatry, N., Sukhaseum, N., Saigne, F.

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Dynamic mesh for TCAD modeling with ECORCE von Michez, A, Boch, J, Touboul, A, Saigné, F

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Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT von Foro, L. L., Touboul, A. D., Michez, A., Wrobel, F., Rech, P., Dilillo, L., Frost, C., Saigné, F.

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An unusual phenomenon of surface reaction observed during Ge overgrowth on Mn5Ge3/Ge(111) heterostructures von Dau, Minh-Tuan, Le Thanh, Vinh, Michez, Lisa A, Petit, Matthieu, Le, Thi-Giang, Abbes, Omar, Spiesser, Aurélie, Ranguis, Alain

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Physical model for enhanced interface-trap formation at low dose rates von Rashkeev, S.N., Cirba, C.R., Fleetwood, D.M., Schrimpf, R.D., Witczak, S.C., Michez, A., Pantelides, S.T.

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Study of a Thermal Annealing Approach for Very High Total Dose Environments von Dhombres, S., Michez, A., Boch, J., Saigne, F., Beauvivre, S., Kraehenbuehl, D., Vaille, J.-R, Adell, P. C., Lorfevre, E., Ecoffet, R., Roig, F.

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Classification of riparian forest species and health condition using multi-temporal and hyperspatial imagery from unmanned aerial system von Michez, Adrien, Piégay, Hervé, Lisein, Jonathan, Claessens, Hugues, Lejeune, Philippe

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Mn segregation in Ge/Mn5Ge3 heterostructures: The role of surface carbon adsorption von Dau, Minh-Tuan, Thanh, Vinh Le, Le, Thi-Giang, Spiesser, Aurélie, Petit, Mathieu, Michez, Lisa A., Daineche, Rachid

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Tracking the evolution of magnetic ordering in Co/Ru multilayers with inhomogeneous interlayer coupling using polarised neutron reflectometry von Gonzalez, J.A., Michez, L.-A., Charlton, T.R., Hickey, B.J., Langridge, S., Marrows, C.H.

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On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination von Privat, A., Touboul, A. D., Michez, A., Bourdarie, S., Vaille, J. R., Wrobel, F., Chatry, N., Chaumont, G., Lorfevre, E., Bezerra, F., Saigne, F.

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Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model von Guetarni, K., Touboul, A.D., Boch, J., Foro, L., Privat, A., Michez, A., Vaillé, J.R., Saigné, F.

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Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET von Michez, A., Boch, J., Dhombres, S., Saigné, F., Touboul, A.D., Vaillé, J.-R., Dusseau, L., Lorfèvre, E., Ecoffet, R.

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