Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD von Rocco, Emma, Licata, Olivia, Mahaboob, Isra, Hogan, Kasey, Tozier, Sean, Meyers, Vincent, McEwen, Benjamin, Novak, Steven, Mazumder, Baishakhi, Reshchikov, Michael, Douglas Bell, L., Shahedipour-Sandvik, F.

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Design and Demonstration of MOCVD-Grown p-Type AlxGa1-xN/GaN Quantum Well Infrared Photodetector von Lanjani, Alireza, McEwen, Benjamin, Meyers, Vincent, Hill, David, Chan, Winston K., Rocco, Emma, Omranpour, Shadi, Shahedipour-Sandvik, F.

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Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors von Rocco, Emma, Marini, Jonathan, Hogan, Kasey, Meyers, Vincent, McEwen, Benjamin, Bell, L. Douglas, Shahedipour-Sandvik, F.

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Near-death experience in survivors of cardiac arrest: a prospective study in the Netherlands von van Lommel, Pirn, van Wees, Ruud, Meyers, Vincent, Elfferich, Ingrid

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Photoconductive Semiconductor Switches: Materials, Physics, and Applications von Meyers, Vincent, Voss, Lars, Flicker, Jack D., Rodriguez, Luciano Garcia, Hjalmarson, Harold P., Lehr, Jane, Gonzalez, Nicolas, Pickrell, Gregory, Ghandiparsi, Soroush, Kaplar, Robert

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Probing the Edges between Stability and Degradation of a Series of ZnSe‐Based Layered Hybrid Semiconductors von Yan, Mengwen, Myers, Christopher A., John, Gregory M., Meyers, Vincent E., Chen, Alan A., Feldblyum, Jeremy I.

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In operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application von Hogan, Kasey, Rodriguez, Miguel, Rocco, Emma, Meyers, Vincent, McEwen, Benjamin, Shahedipour-Sandvik, F. Shadi

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Leveraging Neural Trojan Side-Channels for Output Exfiltration von Meyers, Vincent, Hefenbrock, Michael, Gnad, Dennis, Tahoori, Mehdi

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Nonlinear UV absorption properties of bulk 4H-SiC von Meyers, Vincent, Mauch, Daniel, Dickens, James, Neuber, Andreas

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Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition von Reshchikov, Michael Alexander, Vorobiov, Mykhailo, Andrieiev, Oleksandr, McEwen, Benjamin, Rocco, Emma, Meyers, Vincent, Demchenko, Denis O., Shahedipour-Sandvik, F. Shadi

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Design and Demonstration of MOCVD-Grown p -Type Al x Ga 1-x N/GaN Quantum Well Infrared Photodetector von Lanjani, Alireza, McEwen, Benjamin, Meyers, Vincent, Hill, David, Chan, Winston K., Rocco, Emma, Omranpour, Shadi, Shahedipour-Sandvik, F.

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Quantum wells and the generalized uncertainty principle von Blado, Gardo, Owens, Constance, Meyers, Vincent

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Impurity incorporation and diffusion from regrowth interfaces in N-polar GaN photocathodes and the impact on quantum efficiency von Rocco, Emma, Mahaboob, Isra, Hogan, Kasey, Meyers, Vincent, McEwen, Benjamin, Bell, L. D., Shahedipour-Sandvik, F.

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Incorporation and Interaction of Co‐Doped Be and Mg in GaN Grown by Metal‐Organic Chemic Vapor Deposition von McEwen, Benjamin, Rocco, Emma, Meyers, Vincent, Lanjani, Alireza, Omranpour, Shadi, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Demchenko, Denis O., Reshchikov, Michael A., Shahedipour‐Sandvik, Fatemeh Shadi

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Biallelic Variants in UBA5 Reveal that Disruption of the UFM1 Cascade Can Result in Early-Onset Encephalopathy von Colin, Estelle, Daniel, Jens, Ziegler, Alban, Wakim, Jamal, Scrivo, Aurora, Haack, Tobias B., Khiati, Salim, Denommé, Anne-Sophie, Amati-Bonneau, Patrizia, Charif, Majida, Procaccio, Vincent, Reynier, Pascal, Aleck, Kyrieckos A., Botto, Lorenzo D., Herper, Claudia Lena, Kaiser, Charlotte Sophia, Nabbout, Rima, N’Guyen, Sylvie, Mora-Lorca, José Antonio, Assmann, Birgit, Christ, Stine, Meitinger, Thomas, Strom, Tim M., Prokisch, Holger, Génin, Emmanuelle, Campion, Dominique, Dartigues, Jean-François, Deleuze, Jean-François, Lambert, Jean-Charles, Redon, Richard, Ludwig, Thomas, Grenier-Boley, Benjamin, Letort, Sébastien, Lindenbaum, Pierre, Meyer, Vincent, Quenez, Olivier, Dina, Christian, Bellenguez, Céline, -Le Clézio, Camille Charbonnier, Giemza, Joanna, Chatel, Stéphanie, Férec, Claude, Le Marec, Hervé, Letenneur, Luc, Nicolas, Gaël, Rouault, Karen, Bacq, Delphine, Boland, Anne, Lechner, Doris, Miranda-Vizuete, Antonio, Hoffmann, Georg F., Lenaers, Guy, Bomont, Pascale, Liebau, Eva, Bonneau, Dominique

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Pulsed characterization of a UV LED for pulsed power applications on a silicon carbide photoconductive semiconductor switch von Wilson, Nicholas, Mauch, Daniel, Meyers, Vincent, Feathers, Shannon, Dickens, James, Neuber, Andreas

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MOCVD Growth and Characterization of Be-Doped GaN von McEwen, Benjamin, Reshchikov, Michael A., Rocco, Emma, Meyers, Vincent, Hogan, Kasey, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Demchenko, Denis O., Shahedipour-Sandvik, Fatemeh

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Detection of copy-number variations from NGS data using read depth information: a diagnostic performance evaluation von Quenez, Olivier, Cassinari, Kevin, Coutant, Sophie, Lecoquierre, François, Le Guennec, Kilan, Rousseau, Stéphane, Richard, Anne-Claire, Vasseur, Stéphanie, Bouvignies, Emilie, Bou, Jacqueline, Lienard, Gwendoline, Manase, Sandrine, Fourneaux, Steeve, Drouot, Nathalie, Nguyen-Viet, Virginie, Vezain, Myriam, Chambon, Pascal, Joly-Helas, Géraldine, Le Meur, Nathalie, Castelain, Mathieu, Boland, Anne, Deleuze, Jean-François, Tournier, Isabelle, Charbonnier, Françoise, Kasper, Edwige, Bougeard, Gaëlle, Frebourg, Thierry, Saugier-Veber, Pascale, Baert-Desurmont, Stéphanie, Campion, Dominique, Rovelet-Lecrux, Anne, Nicolas, Gaël

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A Lack of Authentic School Improvement Plan Development: Evidence of Principal Satisficing Behavior von Meyers, Coby Vincent, VanGronigen, Bryan Alexander

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Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials von Peng, Hong Yu, Tweedie, James, Sitar, Zlatko, Bockowski, Michal, Li, Bing Jun, Han, Jung, Collazo, Ramon, Shahedipour-Sandvik, F. Shadi, Liu, Yafei, Chen, Ze Yu, Cheng, Qian Yu, Raghothamachar, Balaji, Meyers, Vincent, Dudley, Michael, Hu, Shanshan

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