Step bunching to step-meandering transition induced by electromigration on Si(1 1 1) vicinal surface von Leroy, F., Karashanova, D., Dufay, M., Debierre, J.-M., Frisch, T., Métois, J.-J., Müller, P.

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Anisotropy of the surface thermodynamic properties of silicon von Müller, P., Métois, J.J.

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Spirals on Si(1 1 1) at sublimation and growth: REM and LODREM observations von Ranguelov, B., Métois, J.J., Müller, P.

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Absolute surface energy determination von METOIS, J. J, MIILLER, P

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Low distortion reflection electron microscopy for surface studies von MÜLLER, P, METOIS, J. J

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Impact of the growth on the stability–instability transition at Si (111) during step bunching induced by electromigration von Métois, J.J., Stoyanov, S.

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Is it possible to use external stress to tune silicon surface morphology? von Karashanova, D., Métois, J.J., Leroy, F., Müller, P.

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Measuring the surface stress polar dependence von Metois, J J, Saul, A, Muller, R

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Equilibrium step dynamics on vicinal surfaces von Pimpinelli, A., Villain, J., Wolf, D.E., Métois, J.J., Heyraud, J.C., Elkinani, I., Uimin, G.

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Vicinal silicon surfaces: From step density wave to faceting von Leroy, F., Müller, P., Métois, J. J., Pierre-Louis, O.

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The equilibrium shape of silicon von Bermond, J.M., Métois, J.J., Egéa, X., Floret, F.

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Kinetic step pairing von PIERRE-LOUIS, O, METOIS, J.-J

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Step flow growth of vicinal (1 1 1)Si surface at high temperatures: step kinetics or surface diffusion control von Metois, J.J., Heyraud, J.C., Stoyanov, S.

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Silicon (001), an atypical low index surface von Métois, J.J., Heyraud, J.C.

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Current induced bunches of steps on the Si(111) surface – a key to measuring the temperature dependence of the step interaction coefficient von Stoyanov, S., Métois, J.J., Tonchev, V.

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Kinetic surface roughening of Si(001) during sublimation von Metois, J.J., Wolf, D.E.

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The meandering of steps and the terrace width distribution on clean Si(111): An in-situ experiment using reflection electron microscopy von Alfonso, C., Bermond, J.M., Heyraud, J.C., Métois, J.J.

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The roughening transition of the Si{113} and Si{110} surfaces – an in situ, real time observation von Heyraud, J.C, Métois, J.J, Bermond, J.M

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Shape universality of equilibrated silicon crystals von Bermond, J.M., Métois, J.J., Heyraud, J.C., Floret, F.

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REM observations of the birth stage of the flat facets on an inner cylindrical silicon surface von Suzuki, T., Métois, J.J., Yagi, K.

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