Gas-assisted focused electron beam and ion beam processing and fabrication von Utke, Ivo, Hoffmann, Patrik, Melngailis, John

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Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films von Tadjer, M. J., Anderson, T. J., Hobart, K. D., Feygelson, T. I., Caldwell, J. D., Eddy, C. R., Kub, F. J., Butler, J. E., Pate, B., Melngailis, J.

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Dynamics of ferroelastic domains in ferroelectric thin films von Nagarajan, V., Roytburd, A., Stanishevsky, A., Prasertchoung, S., Zhao, T., Chen, L., Melngailis, J., Auciello, O., Ramesh, R.

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Diameter dependent transport properties of gallium nitride nanowire field effect transistors von Motayed, Abhishek, Vaudin, Mark, Davydov, Albert V., Melngailis, John, He, Maoqi, Mohammad, S. N.

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In Situ Observation of Reversible Nanomagnetic Switching Induced by Electric Fields von Brintlinger, Todd, Lim, Sung-Hwan, Baloch, Kamal H, Alexander, Paris, Qi, Yi, Barry, John, Melngailis, John, Salamanca-Riba, Lourdes, Takeuchi, I, Cumings, John

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Rapid imaging of nanotubes on insulating substrates von Brintlinger, T., Chen, Yung-Fu, Dürkop, T., Cobas, Enrique, Fuhrer, M. S., Barry, John D., Melngailis, John

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Experimental investigation of electron transport properties of gallium nitride nanowires von Motayed, Abhishek, Davydov, Albert V., Mohammad, S. N., Melngailis, John

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Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si von Nagarajan, V., Stanishevsky, A., Chen, L., Zhao, T., Liu, B.-T., Melngailis, J., Roytburd, A. L., Ramesh, R., Finder, J., Yu, Z., Droopad, R., Eisenbeiser, K.

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Nanometer-scale material contrast imaging with a near-field microwave microscope von Imtiaz, Atif, Anlage, Steven M., Barry, John D., Melngailis, John

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Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique von Motayed, Abhishek, He, Maoqi, Davydov, Albert V., Melngailis, John, Mohammad, S. N.

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Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition von Motayed, Abhishek, Davydov, Albert V., Vaudin, Mark D., Levin, Igor, Melngailis, John, Mohammad, S. N.

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Broadband dielectric microwave microscopy on micron length scales von Tselev, Alexander, Anlage, Steven M., Ma, Zhengkun, Melngailis, John

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GaN avalanche photodiodes operating in linear-gain mode and Geiger mode von Verghese, S., McIntosh, K.A., Molnar, R.J., Mahoney, L.J., Aggarwal, R.L., Geis, M.W., Molvar, K.M., Duerr, E.K., Melngailis, I.

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Scaling of ferroelectric properties in thin films von Ganpule, C. S., Stanishevsky, A., Su, Q., Aggarwal, S., Melngailis, J., Williams, E., Ramesh, R.

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Electrodes for carbon nanotube devices by focused electron beam induced deposition of gold von Brintlinger, T., Fuhrer, M. S., Melngailis, J., Utke, I., Bret, T., Perentes, A., Hoffmann, P., Abourida, M., Doppelt, P.

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Near-field microwave microscopy on nanometer length scales von Imtiaz, Atif, Pollak, Marc, Anlage, Steven M., Barry, John D., Melngailis, John

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Hot embossing of thick amorphous fluoropolymer for back end processing of infrared arrays von Markunas, Justin K., Smith, Peter J., Melngailis, John

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Ion beams in silicon processing and characterization von Chason, E., Picraux, S. T., Poate, J. M., Borland, J. O., Current, M. I., Diaz de la Rubia, T., Eaglesham, D. J., Holland, O. W., Law, M. E., Magee, C. W., Mayer, J. W., Melngailis, J., Tasch, A. F.

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Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films von Ganpule, C. S., Stanishevsky, A., Aggarwal, S., Melngailis, J., Williams, E., Ramesh, R., Joshi, V., Paz de Araujo, Carlos

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Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors von Stanishevsky, A., Nagaraj, B., Melngailis, J., Ramesh, R., Khriachtchev, L., McDaniel, E.

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