Clarification of the relation between the grain structure of industrial grown mc-Si and the area fraction of electrical active defects by means of statistical grain structure evalu... von Lehmann, Toni, Reimann, Christian, Meissner, Elke, Friedrich, Jochen

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Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN von Sintonen, Sakari, Rudziński, Mariusz, Suihkonen, Sami, Jussila, Henri, Knetzger, Michael, Meissner, Elke, Danilewsky, Andreas, Tuomi, Turkka O., Lipsanen, Harri

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Synthesis of Metastable Co4N, Co3N, Co2N, and CoO0.74N0.24 from a Single Azide Precursor and Intermediates in CoBr2 Ammonolysis von Widenmeyer, Marc, Shlyk, Larysa, Becker, Nils, Dronskowski, Richard, Meissner, Elke, Niewa, Rainer

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Technology of Gallium Nitride Crystal Growth von Ehrentraut, Dirk, Bockowski, Michal, Meissner, Elke

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Formation and Decomposition of Iron Nitrides Observed by in situ Powder Neutron Diffraction and Thermal Analysis von Widenmeyer, Marc, Hansen, Thomas C., Meissner, Elke, Niewa, Rainer

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Numerical Analysis of Gas Flow Instabilities in Simplified Vertical HVPE GaN Reactors von Zenk, Markus, Lukin, Gleb, Bastin, Dirk, Doradziński, Roman, Beyer, Franziska C., Meissner, Elke, Friedrich, Jochen

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In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal von Faraji, Sepideh, Meissner, Elke, Weingärtner, Roland, Besendörfer, Sven, Friedrich, Jochen

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Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy von Rumler, Maximilian, Rommel, Mathias, Erlekampf, Jürgen, Azizi, Maral, Geiger, Tobias, Bauer, Anton J., Meißner, Elke, Frey, Lothar

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Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment von Tajalli, Alaleh, Borga, Matteo, Meneghini, Matteo, De Santi, Carlo, Benazzi, Davide, Besendörfer, Sven, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Kabouche, Riad, Abid, Idriss, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio

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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors von Besendörfer, Sven, Meissner, Elke, Medjdoub, Farid, Derluyn, Joff, Friedrich, Jochen, Erlbacher, Tobias

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Structural and optical properties of AlN grown by solid source solution growth method von Kangawa, Yoshihiro, Suetsugu, Hiroshige, Knetzger, Michael, Meissner, Elke, Hazu, Kouji, Chichibu, Shigefusa F., Kajiwara, Takashi, Tanaka, Satoru, Iwasaki, Yosuke, Kakimoto, Koichi

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Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics von Michler, Sondre, Thapa, Sarad, Besendörfer, Sven, Albrecht, Martin, Weingärtner, Roland, Meissner, Elke

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Statistical investigation of dislocation induced leakage current paths in AlGaN/GaN HEMT structures on Si and the impact of growth conditions von Besendörfer, Sven, Meissner, Elke, Friedrich, Jochen

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Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs von Garbe, Valentin, Seidel, Sarah, Schmid, Alexander, Bläß, Ulrich, Meissner, Elke, Heitmann, Johannes

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Theoretical aspects and microstructural investigations on V-pit defects in HVPE grown GaN von Knetzger, Michael, Meissner, Elke, Schröter, Christopher, Friedrich, Jochen

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Ohmic and rectifying contacts on bulk AlN for radiation detector applications von Erlbacher, Tobias, Bickermann, Matthias, Kallinger, Birgit, Meissner, Elke, Bauer, Anton J., Frey, Lothar

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Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage von Michler, Sondre, Hamdaoui, Youssef, Thapa, Sarad, Schwalb, Georg, Besendörfer, Sven, Ziouche, Katir, Albrecht, Martin, Brunner, Frank, Medjdoub, Farid, Meissner, Elke

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Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics von Knetzger, Michael, Meissner, Elke, Derluyn, Joff, Germain, Marianne, Friedrich, Jochen

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A Practical Example of GaN-LED Failure Cause Analysis by Application of Combined Electron Microscopy Techniques von Meissner, Elke, Haeckel, Maral, Friedrich, Jochen

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Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale von Lehmann, Toni, Trempa, Matthias, Meissner, Elke, Zschorsch, Markus, Reimann, Christian, Friedrich, Jochen

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