Internal quantum efficiency and carrier injection efficiency of c-plane, {101‾1} and {112‾2} InGaN/GaN-based light-emitting diodes von Wang, Junjun, Meisch, Tobias, Heinz, Dominik, Zeller, Raphael, Scholz, Ferdinand

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Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 10 1 ¯ 1 ) semipolar GaN template von Li, Yueliang, Qi, Haoyuan, Meisch, Tobias, Hocker, Matthias, Thonke, Klaus, Scholz, Ferdinand, Kaiser, Ute

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Three-dimensional cathodoluminescence characterization of a semipolar GaInN based LED sample von Hocker, Matthias, Maier, Pascal, Tischer, Ingo, Meisch, Tobias, Caliebe, Marian, Scholz, Ferdinand, Mundszinger, Manuel, Kaiser, Ute, Thonke, Klaus

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(20$ bar 2 $1) MOVPE and HVPE GaN grown on 2″ patterned sapphire substrates von Meisch, Tobias, Alimoradi-Jazi, Maryam, Klein, Martin, Scholz, Ferdinand

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Efficiency studies on semipolar GaInN-GaN quantum well structures von Scholz, Ferdinand, Meisch, Tobias, Elkhouly, Karim

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Efficiency studies on semipolar GaInN-GaN quantum well structures: Efficiency studies on semipolar quantum wells von Scholz, Ferdinand, Meisch, Tobias, Elkhouly, Karim

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Effects of miscut of prestructured sapphire substrates and MOVPE growth conditions on (112¯2) oriented GaN von Caliebe, Marian, Meisch, Tobias, Madel, Manfred, Scholz, Ferdinand

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Growth and coalescence studies of (112‾2) oriented GaN on pre-structured sapphire substrates using marker layers von Caliebe, Marian, Han, Yisong, Hocker, Matthias, Meisch, Tobias, Humphreys, Colin, Thonke, Klaus, Scholz, Ferdinand

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Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge von Rossbach, Georg, Feneberg, Martin, Röppischer, Marcus, Werner, Christoph, Esser, Norbert, Cobet, Christoph, Meisch, Tobias, Thonke, Klaus, Dadgar, Armin, Bläsing, Jürgen, Krost, Alois, Goldhahn, Rüdiger

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Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN von Bauer, Sondes, Lazarev, Sergey, Bauer, Martin, Meisch, Tobias, Caliebe, Marian, Holý, Václav, Scholz, Ferdinand, Baumbach, Tilo

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Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells von Langer, Torsten, Klisch, Manuela, Alexej Ketzer, Fedor, Jönen, Holger, Bremers, Heiko, Rossow, Uwe, Meisch, Tobias, Scholz, Ferdinand, Hangleiter, Andreas

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Doping behavior of (112‾2) GaN grown on patterned sapphire substrates von Meisch, Tobias, Zeller, Raphael, Schörner, Sabine, Thonke, Klaus, Kirste, Lutz, Fuchs, Theo, Scholz, Ferdinand

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Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar () GaN layers grown from the sidewall of an r-patterned sapphire subs... von Lazarev, Sergey, Bauer, Sondes, Meisch, Tobias, Bauer, Martin, Tischer, Ingo, Barchuk, Mykhailo, Thonke, Klaus, Holy, Vaclav, Scholz, Ferdinand, Baumbach, Tilo

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Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r-plane sapphire von Metzner, Sebastian, Bertram, Frank, Hempel, Thomas, Meisch, Tobias, Schwaiger, Stephan, Scholz, Ferdinand, Christen, Jürgen

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Improvements of MOVPE grown (11$ bar 2 $2) oriented GaN on pre-structured sapphire substrates using a SiNx interlayer and HVPE overgrowth von Caliebe, Marian, Meisch, Tobias, Neuschl, Benjamin, Bauer, Sebastian, Helbing, Jeffrey, Beck, Dominik, Thonke, Klaus, Klein, Martin, Heinz, Dominik, Scholz, Ferdinand

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Semipolar GaN-based heterostructures on foreign substrates von Scholz, Ferdinand, Caliebe, Marian, Gahramanova, Gulnaz, Heinz, Dominik, Klein, Martin, Leute, Robert A. R., Meisch, Tobias, Wang, Junjun, Hocker, Matthias, Thonke, Klaus

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Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates von Caliebe, Marian, Tandukar, Sushil, Cheng, Zongzhe, Hocker, Matthias, Han, Yisong, Meisch, Tobias, Heinz, Dominik, Huber, Florian, Bauer, Sebastian, Plettl, Alfred, Humphreys, Colin, Thonke, Klaus, Scholz, Ferdinand

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Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope von Müller, Marcus, Schmidt, Gordon, Metzner, Sebastian, Veit, Peter, Bertram, Frank, Leute, Robert Anton Richard, Heinz, Dominik, Wang, Junjun, Meisch, Tobias, Scholz, Ferdinand, Christen, Jürgen

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(20 $ \bar 2 $ 1) MOVPE and HVPE GaN grown on 2 double prime patterned sapphire substrates von Meisch, Tobias, Alimoradi-Jazi, Maryam, Klein, Martin, Scholz, Ferdinand

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Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al0.94Ga0.06N von Feneberg, Martin, Röppischer, Marcus, Esser, Norbert, Cobet, Christoph, Neuschl, Benjamin, Meisch, Tobias, Thonke, Klaus, Goldhahn, Rüdiger

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