First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process von Xiaobing Mei, Yoshida, Wayne, Lange, Mike, Lee, Jane, Zhou, Joe, Po-Hsin Liu, Leong, Kevin, Zamora, Alex, Padilla, Jose, Sarkozy, Stephen, Lai, Richard, Deal, William R.

Volltext

Power Amplification at 0.65 THz Using InP HEMTs von Radisic, V., Leong, K. M. K. H., Xiaobing Mei, Sarkozy, S., Yoshida, W., Deal, W. R.

Volltext

220-GHz Solid-State Power Amplifier Modules von Radisic, V., Leong, K. M. K. H., Sarkozy, S., Xiaobing Mei, Yoshida, W., Po-Hsin Liu, Deal, W. R., Lai, R.

Volltext

850 GHz Receiver and Transmitter Front-Ends Using InP HEMT von Leong, Kevin M. K. H., Xiaobing Mei, Yoshida, Wayne H., Zamora, Alexis, Padilla, Jose G., Gorospe, Ben S., Khanh Nguyen, Deal, William R.

Volltext

Low-Frequency Noise and Passive Imaging With 670 GHz HEMT Low-Noise Amplifiers von Grossman, Erich N., Leong, Kevin, Xiaobing Mei, Deal, William

Volltext

A Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHz von Samoska, L., Deal, W.R., Chattopadhyay, G., Pukala, D., Fung, A., Gaier, T., Soria, M., Radisic, V., Mei, X., Lai, R.

Volltext

Submillimeter InP MMIC Low-Noise Amplifier Gain Stability Characterization von Kooi, Jacob W., Reck, Theodore J., Reeves, Rodrigo A., Fung, Andy K., Samoska, Lorene A., Varonen, Mikko, Deal, William R., Mei, Xiaobing B., Lai, Richard, Jarnot, Robert F., Livesey, Nathaniel J., Chattopadhyay, Goutam

Volltext

Low noise amplifier for 180 GHz frequency band von Kangaslahti, Pekka, Pukala, David, Gaier, Todd, Deal, William, Xiaobing Mei, Lai, Richard

Volltext

A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors von Leong, Kevin M. K. H., Xiaobing Mei, Yoshida, Wayne, Po-Hsin Liu, Zeyang Zhou, Lange, Michael, Ling-Shine Lee, Padilla, Jose G., Zamora, Alexis, Gorospe, Ben S., Nguyen, Khanh, Deal, William R.

Volltext

A 50 mW 220 GHz power amplifier module von Radisic, Vesna, Leong, Kevin M K H, Xiaobing Mei, Sarkozy, Stephen, Yoshida, Wayne, Po-Hsin Liu, Uyeda, Jansen, Lai, Richard, Deal, William R

Volltext

Broadband MMIC LNAs for ALMA Band 2+3 With Noise Temperature Below 28 K von Cuadrado-Calle, David, George, Danielle, Fuller, Gary A., Cleary, Kieran, Samoska, Lorene, Kangaslahti, Pekka, Kooi, Jacob W., Soria, Mary, Varonen, Mikko, Lai, Richard, Mei, Xiaobing

Volltext

A W-band low-noise amplifier with 22K noise temperature von Bryerton, E.W., Xiaobing Mei, Young-Min Kim, Deal, W., Yoshida, W., Lange, M., Uyeda, J., Morgan, M., Lai, R.

Volltext

Miniature low noise G-band I-Q receiver von Kangaslahti, Pekka, Pukala, David, Gaier, Todd, Tanner, Alan, O'Dwyer, Ian, Lambrigtsen, Bjorn, Xiaobing Mei, Lai, Richard

Volltext

Sub-50nm indium phosphide high electron mobility transistor technology for terahertz monolithic microwave integrated circuits and systems von Sarkozy, Stephen, Xiaobing Mei, Yoshida, Wayne, Po-Hsin Liu, Ling-Shine Lee, Zhou, Joe, Leong, Kevin, Radisic, Vesna, Deal, William, Lai, Richard

Volltext

Current approaches to reduce or eliminate mitochondrial DNA mutations von Yang, Liang, Mei, Tingfang, Lin, Xiaobing, Tang, Haite, Wu, Yi, Wang, Rui, Liu, Jinglei, Shah, Zahir, Liu, Xingguo

Volltext

Advanced InP and GaAs HEMT MMIC technologies for MMW commercial products von Barsky, M., Biedenbender, M., Xiaobing Mei, Po-Hsin Liu, Lai, R.

Volltext

Power Amplification at 0.65 THz Using InP HEMTs: Special Issue on Millimeter-Wave Circuits and Systems von RADISIC, Vesna, LEONG, Kevin M. K. H, XIAOBING MEI, SARKOZY, Stephen, YOSHIDA, Wayne, DEAL, William R

Volltext

Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring von Yoshida, Wayne, Mei, Xiaobing

Volltext bestellen

A 50 mW 220 GHz power amplifier module von Radisic, V., Leong, K. M., Mei, X., Sarkozy, S., Yoshida, W., Liu, P., Uyeda, J., Lai, R., Deal, W. R.

Volltext

A 75 mW 210 GHz Power Amplifier Module von Radisic, V., Leong, K. M. K. H., Sarkozy, S., Mei, X., Yoshida, W., Po-Hsin Liu, Lai, R.

Volltext