AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation von Mehandru, R., Luo, B., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A.

Volltext

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors von Luo, B., Johnson, J. W., Kim, J., Mehandru, R. M., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Baca, A. G., Briggs, R. D., Shul, R. J., Monier, C., Han, J.

Volltext

Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes von Kim, Jihyun, Mehandru, R., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Irokawa, Y.

Volltext

Inversion behavior in Sc2O3/GaN gated diodes von Kim, Jihyun, Mehandru, R., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Irokawa, Y.

Volltext

Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide von KIM, J, GILA, B, REN, F, MEHANDRU, R, JOHNSON, J. W, SHIN, J. H, LEE, K. P, LUO, B, ONSTINE, A, ABERNATHY, C. R, PEARTON, S. J

Volltext

AlGaN/GaN HEMT based liquid sensors von Mehandru, R., Luo, B., Kang, B.S., Kim, Jihyun, Ren, F., Pearton, S.J., Pan, C.-C., Chen, G.-T., Chyi, J.-I.

Volltext

Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors von LUO, B, MEHANDRU, R, JENKINS, T, SEWELL, J, VIA, D, CRESPO, A, IROKAWA, Y, KIM, J, REN, F, GILA, B. P, ONSTINE, A. H, ABERNATHY, C. R, PEARTON, S. J, FITCH, R, GILLESPIE, J

Volltext

Process modeling for advanced device technologies von Cea, S. M., Botelho, S., Chaudhry, A., Fleischmann, P., Giles, M. D., Grigoriev, A., Kaushik, A., Keys, P. H., Kennel, H. W., Lilak, A. D., Mehandru, R., Stettler, M., Voinov, B., Voynich, N., Weber, C., Zhavoronok, N.

Volltext

Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing von Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kim, J., Luo, B., Mehandru, R., Ren, F., Lee, K. P., Pearton, S. J., Osinsky, A. V., Norris, P. E.

Volltext

Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs von Gila, B.P., Johnson, J.W., Mehandru, R., Luo, B., Onstine, A.H., Krishnamoorthy, V., Bates, S., Abernathy, C.R., Ren, F., Pearton, S.J.

Volltext

Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors von Kang, B. S., Mehandru, R., Kim, S., Ren, F., Fitch, R. C., Gillespie, J. K., Moser, N., Jessen, G., Jenkins, T., Dettmer, R., Via, D., Crespo, A., Gila, B. P., Abernathy, C. R., Pearton, S. J.

Volltext

Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs von Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.

Volltext

Mixing characteristics of InGaAs metal–semiconductor–metal photodetectors with Schottky enhancement layers von Shen, H., Aliberti, K., Stann, B., Newman, P., Mehandru, R., Ren, F.

Volltext

Band line-up and mechanisms of current flow in n -GaN/ p- SiC and n -AlGaN/ p -SiC heterojunctions von Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Luo, B., Kim, J., Mehandru, R., Ren, F., Lee, K. P., Pearton, S. J., Osinsky, A. V., Norris, P. E.

Volltext

Effect of deposition conditions and annealing on W Schottky contacts on n-GaN von Mehandru, R, Kang, S, Kim, S, Ren, F, Kravchenko, I, Lewis, W, Pearton, S.J

Volltext

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers von Dang, G.T., Mehandru, R., Luo, B., Ren, F., Hobson, W.S., Lopata, J., Tayahi, M., Chu, S.N.G., Pearton, S.J., Chang, W., Shen, H.

Volltext

Thermal simulations of high power, bulk GaN rectifiers von Mehandru, R., Kim, S., Kim, J., Ren, F., Lothian, J.R., Pearton, S.J., Park, S.S., Park, Y.J.

Volltext

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation von Luo, B., Mehandru, R., Kim, Jihyun, Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R.C., Moser, N., Gillespie, J.K., Jessen, G.H., Jenkins, T.J., Yannuzi, M.J., Via, G.D., Crespo, A.

Volltext

Analysis of the mixing effect in InAlAs/InGaAs metal-semiconductor-metal photodetectors von Aliberti, K., Stann, B., Svensson, S., Mehandru, R., Ren, F., Shen, H.

Volltext

Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design von Mehandru, R., Dang, G., Kim, S., Ren, F., Hobson, W.S., Lopata, J., Pearton, S.J., Chang, W., Shen, H.

Volltext