Comparison of SOI Versus Bulk FinFET Technologies for 6T-SRAM Voltage Scaling at the 7-/8-nm Node von Xi Zhang, Connelly, Daniel, Takeuchi, Hideki, Hytha, Marek, Mears, Robert J., Liu, Tsu-Jae King

Volltext

Analysis of 7/8-nm Bulk-Si FinFET Technologies for 6T-SRAM Scaling von Xi Zhang, Connelly, Daniel, Peng Zheng, Takeuchi, Hideki, Hytha, Marek, Mears, Robert J., Tsu-Jae King Liu

Volltext

Intermixing reduction in ultra-thin titanium nitride/hafnium oxide film stacks grown on oxygen-inserted silicon and associated reduction of the interface charge dipole von Smith, Jeffrey A., Ni, Kai, Takeuchi, Hideki, Stephenson, Robert J., Chen, Yi-Ann, Hytha, Marek, Li, Shuyi, Nicollian, Paul E., Mears, Robert J., Datta, Suman

Volltext

Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation von Zhang, Xi, Takeuchi, Hideki, Connelly, Daniel, Hytha, Marek, Mears, Robert J., Rubin, Leonard M., King Liu, Tsu-Jae

Volltext

Electron mobility enhancement in (100) oxygen-inserted silicon channel von Xu, Nuo, Takeuchi, Hideki, Hytha, Marek, Cody, Nyles W., Stephenson, Robert J., Kwak, Byungil, Cha, Seon Yong, Mears, Robert J., King Liu, Tsu-Jae

Volltext

Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel von Takeuchi, Hideki, Choutov, Dmitri, Agrawal, Nidhi, Datta, Suman, Mears, Robert J., Stephenson, Robert J., Hytha, Marek, Connelly, Daniel, Fastenko, Pavel, Burton, Richard, Cody, Nyles W., Weeks, Doran

Volltext

Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology von Nuo Xu, Takeuchi, Hideki, Damrongplasit, Nattapol, Stephenson, Robert J., Xiangyang Huang, Cody, Nyles W., Hytha, Marek, Mears, Robert J., Tsu-Jae King Liu

Volltext

Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM Yield von Damrongplasit, Nattapol, Nuo Xu, Takeuchi, Hideki, Stephenson, Robert J., Cody, Nyles W., Yiptong, Augustin, Xiangyang Huang, Hytha, Marek, Mears, Robert J., Tsu-Jae King Liu

Volltext

Electrical measurements of multipath interference in distributed Raman amplifiers von Fludger, C.R.S., Mears, R.J.

Volltext

Suppressing Oxidation-Enhanced Diffusion of Boron in Silicon With Oxygen-Inserted Layers von Connelly, Daniel, Burton, Richard, Cody, Nyles W., Fastenko, Pavel, Hytha, Marek, Stephenson, Robert, Takeuchi, Hideki, Weeks, Keith Doran, Mears, Robert

Volltext

Effects of oxygen-inserted layers and oxide capping layer on dopant activation for the formation of ultrashallow p-n junctions in silicon von Zhang, Xi, Connelly, Daniel, Takeuchi, Hideki, Hytha, Marek, Mears, Robert J., Rubin, Leonard M., Liu, Tsu-Jae King

Volltext

The Changing Face of Undergraduate Assessment in UK Sociology von Harrison, Eric, Mears, Robert

Volltext

Integrated transceivers for optical wireless communications von O'Brien, D.C., Faulkner, G.E., Zyambo, E.B., Jim, K., Edwards, D.J., Stavrinou, P., Parry, G., Bellon, J., Sibley, M.J., Lalithambika, V.A., Joyner, V.M., Samsudin, R.J., Holburn, D.M., Mears, R.J.

Volltext

An isomorphic Fourier transform analysis of AWGs and FBGs von Parker, M.C., Walker, S.D., Mears, R.J.

Volltext

(Invited) Applications of Oxygen Inserted Epitaxy von Mears, Robert J, Hytha, Marek, Takeuchi, Hideki

Volltext

Amplitude Level Evolution in QCD von Mears, Robert

Volltext bestellen

RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE von TAKEUCHI, HIDEKI, MEARS, ROBERT J

Volltext bestellen

METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE von MEARS, Robert J, TAKEUCHI, Hideki

Volltext bestellen

Radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice von Mears, Robert J, Takeuchi, Hideki

Volltext bestellen

Methods for making radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice von Mears, Robert J, Takeuchi, Hideki

Volltext bestellen