Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation von Zhang, Xi, Takeuchi, Hideki, Connelly, Daniel, Hytha, Marek, Mears, Robert J., Rubin, Leonard M., King Liu, Tsu-Jae

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Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel von Takeuchi, Hideki, Choutov, Dmitri, Agrawal, Nidhi, Datta, Suman, Mears, Robert J., Stephenson, Robert J., Hytha, Marek, Connelly, Daniel, Fastenko, Pavel, Burton, Richard, Cody, Nyles W., Weeks, Doran

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Comparison of SOI Versus Bulk FinFET Technologies for 6T-SRAM Voltage Scaling at the 7-/8-nm Node von Xi Zhang, Connelly, Daniel, Takeuchi, Hideki, Hytha, Marek, Mears, Robert J., Liu, Tsu-Jae King

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Analysis of 7/8-nm Bulk-Si FinFET Technologies for 6T-SRAM Scaling von Xi Zhang, Connelly, Daniel, Peng Zheng, Takeuchi, Hideki, Hytha, Marek, Mears, Robert J., Tsu-Jae King Liu

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Intermixing reduction in ultra-thin titanium nitride/hafnium oxide film stacks grown on oxygen-inserted silicon and associated reduction of the interface charge dipole von Smith, Jeffrey A., Ni, Kai, Takeuchi, Hideki, Stephenson, Robert J., Chen, Yi-Ann, Hytha, Marek, Li, Shuyi, Nicollian, Paul E., Mears, Robert J., Datta, Suman

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Electron mobility enhancement in (100) oxygen-inserted silicon channel von Xu, Nuo, Takeuchi, Hideki, Hytha, Marek, Cody, Nyles W., Stephenson, Robert J., Kwak, Byungil, Cha, Seon Yong, Mears, Robert J., King Liu, Tsu-Jae

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Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology von Nuo Xu, Takeuchi, Hideki, Damrongplasit, Nattapol, Stephenson, Robert J., Xiangyang Huang, Cody, Nyles W., Hytha, Marek, Mears, Robert J., Tsu-Jae King Liu

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Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM Yield von Damrongplasit, Nattapol, Nuo Xu, Takeuchi, Hideki, Stephenson, Robert J., Cody, Nyles W., Yiptong, Augustin, Xiangyang Huang, Hytha, Marek, Mears, Robert J., Tsu-Jae King Liu

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Electrical measurements of multipath interference in distributed Raman amplifiers von Fludger, C.R.S., Mears, R.J.

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Effects of oxygen-inserted layers and oxide capping layer on dopant activation for the formation of ultrashallow p-n junctions in silicon von Zhang, Xi, Connelly, Daniel, Takeuchi, Hideki, Hytha, Marek, Mears, Robert J., Rubin, Leonard M., Liu, Tsu-Jae King

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Integrated transceivers for optical wireless communications von O'Brien, D.C., Faulkner, G.E., Zyambo, E.B., Jim, K., Edwards, D.J., Stavrinou, P., Parry, G., Bellon, J., Sibley, M.J., Lalithambika, V.A., Joyner, V.M., Samsudin, R.J., Holburn, D.M., Mears, R.J.

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An isomorphic Fourier transform analysis of AWGs and FBGs von Parker, M.C., Walker, S.D., Mears, R.J.

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(Invited) Applications of Oxygen Inserted Epitaxy von Mears, Robert J, Hytha, Marek, Takeuchi, Hideki

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RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE von TAKEUCHI, HIDEKI, MEARS, ROBERT J

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METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE von MEARS, Robert J, TAKEUCHI, Hideki

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Radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice von Mears, Robert J, Takeuchi, Hideki

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Methods for making radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice von Mears, Robert J, Takeuchi, Hideki

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SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK FUNCTION TUNING AND ASSOCIATED METHODS von MEARS, Robert, J, TAKEUCHI, Hideki

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RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE AND ASSOCIATED METHODS von MEARS, Robert J, TAKEUCHI, Hideki

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METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE von TAKEUCHI, HIDEKI, MEARS, ROBERT J

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