Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene von Dimitrakopoulos, Christos, Grill, Alfred, McArdle, Timothy J., Liu, Zihong, Wisnieff, Robert, Antoniadis, Dimitri A.

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Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors von Dimitrakopoulos, Christos, Lin, Yu-Ming, Grill, Alfred, Farmer, Damon B., Freitag, Marcus, Sun, Yanning, Han, Shu-Jen, Chen, Zhihong, Jenkins, Keith A., Zhu, Yu, Liu, Zihong, McArdle, Timothy J., Ott, John A., Wisnieff, Robert, Avouris, Phaedon

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Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates von McArdle, Timothy J., Chu, Jack O., Zhu, Yu, Liu, Zihong, Krishnan, Mahadevaiyer, Breslin, Christopher M., Dimitrakopoulos, Christos, Wisnieff, Robert, Grill, Alfred

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Reduced leakage current in Josephson tunnel junctions with codeposited barriers von Welander, Paul B., McArdle, Timothy J., Eckstein, James N.

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Reduced leakage current in Josephson tunnel junctions withcodeposited barriers von Welander, Paul B., McArdle, Timothy J., Eckstein, James N.

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Advantages of Faceted P-Raised Source/Drain in Fully Depleted Silicon on Insulator Technology von Aydin, Ömür Işıl, Holt, Judson Robert, Le Royer, Cyrille, Vanamurthy, Laks, Feudel, Thomas, Heyne, Tobias, Gerber, Ralf, Lenski, Markus, Jansen, Sören, Utess, Dirk, Klein, Christoph, Peeva, Anita, Mulfinger, George Robert, McArdle, Timothy J, Barge, David, Divay, Alexis, Lehmann, Steffen, Smith, Elliot, Peters, Carsten, Sachse, Jens-Uwe

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(Invited) Extending Advanced CMOS Scaling with SiGe Channel Materials von Carter, Rick J, Sporer, Ryan, McArdle, Timothy J, Mulfinger, George Robert, Holt, Judson Robert, Beasor, Scott, Child, Amy, Fronheiser, Jody, Wahl, Jeremy A, Geisler, Holm, Kluth, George J, Triyoso, Dina H, Punchihewa, Kasun, Rana, Uzma, Vanamurthy, Laks, Sohn, D K

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Effect of SiC wafer miscut angle on the morphology and Hall mobilityof epitaxially grown graphene von Dimitrakopoulos, Christos, Grill, Alfred, McArdle, Timothy J., Liu, Zihong, Wisnieff, Robert, Antoniadis, Dimitri A.

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Multilayer epitaxial graphene formed by pyrolysis of polycrystallinesilicon-carbide grown on c-plane sapphire substrates von McArdle, Timothy J., Chu, Jack O., Zhu, Yu, Liu, Zihong, Krishnan, Mahadevaiyer, Breslin, Christopher M., Dimitrakopoulos, Christos, Wisnieff, Robert, Grill, Alfred

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Cratered Lorentzian response of driven microwave superconducting nanowire-bridged resonators: Oscillatory and magnetic-field induced stochastic states von Brenner, Matthew W., Gopalakrishnan, Sarang, Ku, Jaseung, McArdle, Timothy J., Eckstein, James N., Shah, Nayana, Goldbart, Paul M., Bezryadin, Alexey

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(Invited) A Brief History of Selective Epitaxy (at IBM SRDC) von Holt, Judson Robert, Stoker, Matthew Wahlquist, Mcardle, Timothy J, Levesque, Annie

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Self-aligned sacrificial epitaxial capping for trench silicide von McArdle, Timothy J, Beasor, Scott, Mulfinger, George R, Zhang, Hao, Holt, Judson R, Vanamurthy, Lakshmanan H

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Field-effect transistors with a grown silicon-germanium channel von McArdle, Timothy J, Qi, Yi, Mulfinger, George R, Bazizi, El Mehdi, Fronheiser, Jody

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FIELD-EFFECT TRANSISTORS WITH A GROWN SILICON-GERMANIUM CHANNEL von McArdle, Timothy J, Qi, Yi, Mulfinger, George R, Bazizi, El Mehdi, Fronheiser, Jody

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Recess liner for silicon germanium fin formation von Holt Judson R, McArdle Timothy J, Wang Junli

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(Invited) Extending Advanced CMOS Scaling with SiGe Channel Materials von Carter, Rick J, Sporer, Ryan, Triyoso, Dina H, Child, Amy, Mulfinger, George Robert, Wahl, Jeremy A, Mcardle, Timothy J, Kluth, George J, Fronheiser, Jody, Holt, Judson Robert, Punchihewa, Kasun, Vanamurthy, Laks, Beasor, Scott, Rana, Uzma, Sohn, D K

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RECESS LINER FOR SILICON GERMANIUM FIN FORMATION von MCARDLE Timothy J, WANG Junli, HOLT Judson R

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Methods of forming a gate-to-source/drain contact structure von McArdle, Timothy J, Aydin, Ömür, Xie, Ruilong, Mulfinger, George, Merbeth, Thomas, Holt, Judson R

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METHODS OF FORMING A GATE-TO-SOURCE/DRAIN CONTACT STRUCTURE von McArdle, Timothy J, Aydin, Ömür, Xie, Ruilong, Mulfinger, George, Merbeth, Thomas, Holt, Judson R

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Post gate silicon germanium channel condensation and method for producing the same von Mulfinger, George Robert, McArdle, Timothy J, Sporer, Ryan, Holt, Judson Robert

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