Experimental study of post-crack vibrations in dynamic fracture von Ronseaux, Pauline, Madeira, Florence, Mazen, Fredéric, Landru, Didier, Kononchuk, Oleg, Tardif, Samuel, Rieutord, François

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Purcell Enhancement of Silicon W Centers in Circular Bragg Grating Cavities von Lefaucher, Baptiste, Jager, Jean-Baptiste, Calvo, Vincent, Cache, Félix, Durand, Alrik, Jacques, Vincent, Robert-Philip, Isabelle, Cassabois, Guillaume, Baron, Yoann, Mazen, Frédéric, Kerdilès, Sébastien, Reboh, Shay, Dréau, Anaïs, Gérard, Jean-Michel

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Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5 von Luong, Minh, Cherkashin, Nikolay, Pecassou, Beatrice, Sabbione, Chiara, Mazen, Frederic, Claverie, Alain

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Unraveling structural and compositional information in 3D FinFET electronic devices von Trombini, Henrique, Marmitt, Gabriel Guterres, Alencar, Igor, Baptista, Daniel Lorscheitter, Reboh, Shay, Mazen, Frédéric, Pinheiro, Rafael Bortolin, Sanchez, Dario Ferreira, Senna, Carlos Alberto, Archanjo, Bráulio Soares, Achete, Carlos Alberto, Grande, Pedro Luis

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Homojunction silicon solar cells doping by ion implantation von Milési, Frédéric, Coig, Marianne, Lerat, Jean-François, Desrues, Thibaut, Le Perchec, Jérôme, Lanterne, Adeline, Lachal, Laurent, Mazen, Frédéric

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300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology von Widiez, Julie, Sollier, Sébastien, Baron, Thierry, Martin, Mickaël, Gaudin, Gweltaz, Mazen, Frédéric, Madeira, Florence, Favier, Sylvie, Salaun, Amélie, Alcotte, Reynald, Beche, Elodie, Grampeix, Helen, Veytizou, Christelle, Moulet, Jean-Sébastien

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Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices von Akatsu, Takeshi, Deguet, Chrystel, Sanchez, Loic, Allibert, Frédéric, Rouchon, Denis, Signamarcheix, Thomas, Richtarch, Claire, Boussagol, Alice, Loup, Virginie, Mazen, Frédéric, Hartmann, Jean-Michel, Campidelli, Yves, Clavelier, Laurent, Letertre, Fabrice, Kernevez, Nelly, Mazure, Carlos

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Capping stability of Mg‐implanted GaN layers grown on silicon von Lardeau‐Falcy, Aurélien, Coig, Marianne, Charles, Matthew, Licitra, Christophe, Baines, Yannick, Eymery, Joël, Mazen, Frédéric

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(Invited) SOI-Type Bonded Structures for Advanced Technology Nodes von Widiez, Julie, Hartmann, Jean-Michel, Mazen, Frédéric, Sollier, Sébastien, Veytizou, Christelle, Bogumilowicz, Yann, Augendre, Emmanuel, Martin, Mickael, Gonzatti, Frédéric, Roure, Marie-Christine, Duvernay, Julien, Loup, Virginie, Euvrard-Colnat, Catherine, Seignard, Aurélien, Baron, Thierry, Cipro, Romain, Bassani, Franck, Papon, Anne-Marie, Guedj, Cyril, Huyet, Isabelle, Rivoire, Maurice, Besson, Pascal, Figuet, Christophe, Schwarzenbach, Walter, Delprat, Daniel, Signamarcheix, Thomas

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Boron Emitter Formation by Plasma Immersion Ion Implantation in n-type PERT Silicon Solar Cells von Lerat, Jean-François, Desrues, Thibaut, Le Perchec, Jérôme, Coig, Marianne, Milesi, Frederic, Mazen, Frédéric, Michel, Thomas, Roux, Laurent, Veschetti, Yannick, Dubois, Sébastien

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In Situ Observation of Pressurized Microcrack Growth in Silicon von Colonel, Lucas, Mazen, Frédéric, Landru, Didier, Kononchuk, Oleg, Ben Mohamed, Nadia, Rieutord, François

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InGaAs-OI Substrate Fabrication on a 300 mm Wafer von Sollier, Sebastien, Widiez, Julie, Gaudin, Gweltaz, Mazen, Frederic, Baron, Thierry, Martin, Mickail, Roure, Marie-Christine, Besson, Pascal, Morales, Christophe, Beche, Elodie, Fournel, Frank, Favier, Sylvie, Salaun, Amelie, Gergaud, Patrice, Cordeau, Maryline, Veytizou, Christellle, Ecarnot, Ludovic, Delprat, Daniel, Radu, Ionut, Signamarcheix, Thomas

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Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects von Kuisseu, Pauline Sylvia Pokam, Pingault, Timothée, Ntsoenzok, Esidor, Regula, Gabrielle, Mazen, Frédéric, Sauldubois, Audrey, Andreazza, Caroline

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Fracture Wake Patterns in Brittle Solids von Landru, Didier, Massy, Damien, Mohamed, Nadia Ben, Kononchuk, Oleg, Mazen, Frederic, Tardif, Samuel, Rieutord, Francois

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Wafering of ultra-thin silicon substrates by MeV hydrogen implantation: effects of fluence and energy von Kuisseu, Pauline Sylvia Pokam, Pingault, Timothée, Ntsoenzok, Esidor, Regula, Gabrielle, Mazen, Frédéric, Sauldubois, Audrey, Andreazza, Caroline

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Si exfoliation by MeV proton implantation von Braley, Carole, Mazen, Frédéric, Tauzin, Aurélie, Rieutord, François, Deguet, Chrystel, Ntsoenzok, Esidor

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Hydrogen implantation-induced blistering in diamond : towards diamond layer transfer by the Smart CutTM technique von Masante, Cédric, de Vecchy, Jon, Mazen, Frédéric, Milesi, Frederic, Di Cioccio, Léa, Pernot, Julien, Lloret, Fernando, Araujo, Daniel, Pinero, José Carlos, Rochat, Névine, Pierre, Francois, Servant, Florence, Widiez, Julie

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Capping stability of Mg-implanted GaN layers grown on silicon: Capping stability of Mg-implanted GaN layers grown on Si von Lardeau-Falcy, Aurélien, Coig, Marianne, Charles, Matthew, Licitra, Christophe, Baines, Yannick, Eymery, Joël, Mazen, Frédéric

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(Keynote) Low Temperature SmartCutTM Process for 3D Integration von Schwarzenbach, Walter, Reboh, Shay, Ghorbel, Aymen, Gaudin, Gweltaz, Besnard, Guillaume, Mazen, Frédéric, Loup, Virginie, Maitrejean, Sylvain, Brunet, Laurent, Nguyen, Bich-Yen, Maleville, Christophe

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(Keynote) Low Temperature SmartCut TM Process for 3D Integration von Schwarzenbach, Walter, Reboh, Shay, Ghorbel, Aymen, Gaudin, Gweltaz, Besnard, Guillaume, Mazen, Frédéric, Loup, Virginie, Maitrejean, Sylvain, Brunet, Laurent, Nguyen, Bich-Yen, Maleville, Christophe

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