Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers von Powell, J. A., Petit, J. B., Edgar, J. H., Jenkins, I. G., Matus, L. G.

Volltext

Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers von Powell, J. A., Larkin, D. J., Matus, L. G., Choyke, W. J., Bradshaw, J. L.

Volltext

High-voltage 6H-SiC p-n junction diodes von Matus, L. G., Powell, J. A., Salupo, C. S.

Volltext

Growth and characterization of cubic SiC single-crystal films on Si von Powell, J. Anthony, Matus, L. G., Kuczmarski, Maria A.

Volltext

Application of Oxidation to the Structural Characterization of Sic Epitaxial Films von Powell, J. A., Petit, J. B., Edgar, J. H., Jenkins, I. G., Matus, L. G.

Volltext

Growth of improved quality 3C-SiC films on 6H-SiC substrates von Powell, J. A., Matus, L. G., Choyke, W. J., Bradshaw, J. L., Larkin, D. J.

Volltext

Thermal oxidation of SiC in N2O von DE MEO, R. C, WANG, T. K, CHOW, T. P, BROWN, D. M, MATUS, L. G

Volltext

Compensation in epitaxial cubic SiC films von Segall, B., Alterovitz, S. A., Haugland, E. J., Matus, L. G.

Volltext

Improved beta-SiC heteroepitaxial films using off-axis Si substrates von Powell, J. A., Matus, L. G., Kuczmarski, M. A., Chorey, C. M., Cheng, T. T.

Volltext

High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC von Tang, S. M., Berry, W. B., Kwor, R., Zeller, M. V., Matus, L. G.

Volltext

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition von Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S., Matus, L.G.

Volltext

Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films von Mehregany, M., Lijun Tong, Matus, L.G., Larkin, D.J.

Volltext

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates von Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S., Matus, L.G.

Volltext

Convenient mounting method for electrical measurements of thin samples von Matus, L. G., Summers, R. L.

Volltext

Deep-level dominated electrical characteristics of Au contacts on beta-SiC von Das, K., Kong, H. S., Petit, J. B., Bumgarner, J. W., Davis, R. F., Matus, L. G.

Volltext

Site-competition epitaxy for superior silicon carbide electronics von Larkin, David J., Neudeck, Philip G., Powell, J. Anthony, Matus, Lawrence G.

Volltext

Tuning and matching the TM010 cavity von MATUS, L. G, BOSS, C. B, RIDDLE, A. N

Volltext

Growth of step-free surfaces on device-size (0001)SiC mesas von Powell, J. Anthony, Neudeck, Philip G., Trunek, Andrew J., Beheim, Glenn M., Matus, Lawrence G., Hoffman, Richard W., Keys, Luann J.

Volltext

Mechanical properties of 3C silicon carbide von Tong, Lijun, Mehregany, Mehran, Matus, Lawrence G.

Volltext

Comment on 'Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition' von Segall, B., Alterovitz, S. A., Haugland, E. J., Matus, L. G.

Volltext